Techniques are disclosed to enable a system for wide-range scanning of objects in three-dimensions. A broad-beam, laser-based transmitter is provided that is adapted to generate a scanning signal to be transmitted in a scanning direction toward an object to be scanned, a portion of the scanning signal being reflected by the object to be scanned. Additionally, a scanning signal collection lens is provided that is adapted to receive the portion of reflected scanning signal and to direct the reflected scanning signal to a mirror array, the mirror array adapted to selectively direct a directed portion of the reflected scanning signal as well as a detector lens adapted to receive the directed scanning signal, the collection lens adapted to focus the directed scanning signal resulting in a focused directed signal and a photoelectric detector adapted to convert the focused directed scanning signal into at least one electronic representation of a two-dimensional image. A rotational motor is provided that is adapted to rotate the system with respect to the area being scanned.

A photoelectric conversion device includes a pixel, the pixel including an avalanche photodiode, and a signal processing circuit including a counter configured to generate a count value based on a photon incident on the avalanche photodiode during a count period, the signal processing circuit being configured to output the count value for each count period repeatedly. The pixel transitions from a first state to a second state in which a length of the count period is shorter than that in the first state in accordance with a result of determination based on the count value and a predetermined threshold value.

A photoelectric conversion device includes a pixel, the pixel including an avalanche photodiode, and a signal processing circuit including a counter configured to generate a count value based on a photon incident on the avalanche photodiode during a count period, the signal processing circuit being configured to output the count value for each count period repeatedly. The pixel transitions from a first state to a second state in which a length of the count period is shorter than that in the first state in accordance with a result of determination based on the count value and a predetermined threshold value.

A photoelectric conversion device according to an embodiment of the present disclosure includes an avalanche photodiode, a pulse generation unit that converts an output from the avalanche photodiode into a pulse signal, a pulse count unit that counts the pulse signal and outputs a pulse count value, a time count unit that outputs a time count value indicating a time from the start of operation of the pulse generation unit, an output unit that, when the pulse count value does not exceed a threshold value, outputs the pulse count value, and when the pulse count value exceeds the threshold value, ends counting in the pulse count unit and outputs the time count value at the time of the pulse count value exceeding the threshold value, and a threshold calculation unit that calculates the threshold value using the time count value.

A photoelectric conversion device according to an embodiment of the present disclosure includes an avalanche photodiode, a pulse generation unit that converts an output from the avalanche photodiode into a pulse signal, a pulse count unit that counts the pulse signal and outputs a pulse count value, a time count unit that outputs a time count value indicating a time from the start of operation of the pulse generation unit, an output unit that, when the pulse count value does not exceed a threshold value, outputs the pulse count value, and when the pulse count value exceeds the threshold value, ends counting in the pulse count unit and outputs the time count value at the time of the pulse count value exceeding the threshold value, and a threshold calculation unit that calculates the threshold value using the time count value.

A light receiving device comprises a substrate of a first type on a first electrode, a first region of the first type on the substrate, second regions of the first type arrayed on the first region, and third regions of a second type on the second regions. A first isolation portion is between the adjacent second regions and adjacent third regions. A second isolation portion comprising a metal is embedded the first isolation portions. A fourth region of the second type is on the first region and spaced from the second regions in a second direction with a pair of fifth regions thereon. An insulating film is on the fourth region and the pair of fifth regions. A second electrode is on the insulating film between the pair of fifth regions. The second electrode is comprised of the same metal as the second isolation portion.

A photoelectric conversion apparatus includes an effective pixel circuit, a reference pixel circuit, a signal output unit, and a comparison unit. The effective pixel circuit includes a photoelectric conversion unit, and is configured to be controlled by using a control line and to output a digital signal based on electric charges generated by the photoelectric conversion unit. The reference pixel circuit includes a holding unit for holding the digital signal. The reference pixel circuit is configured to be controlled by using the control line together with the effective pixel circuit. The signal output unit is configured to output a signal to the holding unit so that a first digital signal with a predetermined value is held by the holding unit. The comparison unit is configured to compare the first signal with the digital signal output from the holding unit controlled to hold the first digital signal.

A photoelectric conversion apparatus includes an effective pixel circuit, a reference pixel circuit, a signal output unit, and a comparison unit. The effective pixel circuit includes a photoelectric conversion unit, and is configured to be controlled by using a control line and to output a digital signal based on electric charges generated by the photoelectric conversion unit. The reference pixel circuit includes a holding unit for holding the digital signal. The reference pixel circuit is configured to be controlled by using the control line together with the effective pixel circuit. The signal output unit is configured to output a signal to the holding unit so that a first digital signal with a predetermined value is held by the holding unit. The comparison unit is configured to compare the first signal with the digital signal output from the holding unit controlled to hold the first digital signal.

An avalanche photodiode (APD) structure, comprising an absorption layer comprising InGaAs, InGaAlAs, InGaAsP, or an InGaAs/GaAsSb type-II superlattice, an avalanche layer comprising AlGaAsSb, and a transition portion disposed between the absorption layer and the avalanche layer is disclosed. The transition portion comprises a first grading layer of InAlGaAs or InGaAsP and a first field control layer disposed between the first grading layer and the avalanche layer. The first field control layer has a bandgap between the bandgap of the absorption layer and the bandgap of the avalanche layer. In an alternative embodiment, an avalanche photodiode (APD) structure, comprising an absorption layer comprising GaAsSb, an avalanche layer comprising AlGaAsSb, and a transition portion disposed between the absorption layer and the avalanche layer. The transition portion comprises a first grading layer and one or more field control layers having a bandgap between the bandgaps of the absorption layer and the avalanche layer.

A light receiving element enables light incidence from the upper surface of a light receiving element while realizing a structure in which the optical path length is extended, and as a result, facilitates optical mounting. A light receiving element in which a first semiconductor layer, a light absorbing layer composed of a semiconductor, a second semiconductor layer, a first electrode formed in contact with the first semiconductor layer, and a second electrode formed in contact with the second semiconductor layer and including a first reflective layer composed of a metal are formed on an upper surface of a substrate, wherein incident light is incident from the upper surface of the substrate, reflected by the bottom surface of the substrate, and then incident on the light absorbing layer obliquely to the vertical direction.