A semiconductor device includes a conductive line and a conductive via contacting the conductive line. A first dielectric material contacts a first sidewall surface of the conductive via. A second dielectric material contacts a second sidewall surface of the conductive via. The first dielectric material includes a first material composition, and the second dielectric material includes a second material composition different than the first material composition.

A semiconductor arrangement is provided. The semiconductor arrangement includes a first dielectric layer over a substrate, a metal layer over the first dielectric layer, a first conductive structure passing through the metal layer and the first dielectric layer, a second conductive structure passing through the metal layer and the first dielectric layer, and a third conductive structure coupling the first conductive structure to the second conductive structure, and overlying a first portion of the metal layer between the first conductive structure and the second conductive structure, wherein an interface exists between the metal layer and at least one of the first conductive structure or the second conductive structure.

The present disclosure provides a method of manufacturing a semiconductor device. The method includes forming an interconnect layer on a semiconductor component, wherein the interconnect layer contains at least one metal pad electrically coupled to the semiconductor component; depositing an insulating layer on the interconnect layer; depositing a bonding dielectric on the insulating layer; and forming a re-routing layer penetrating through the bonding dielectric and the insulating layer and contacting the interconnect layer.

A semiconductor arrangement is provided. The semiconductor arrangement includes a first dielectric layer over a substrate, a metal layer over the first dielectric layer, a first conductive structure passing through the metal layer and the first dielectric layer, a second conductive structure passing through the metal layer and the first dielectric layer, and a third conductive structure coupling the first conductive structure to the second conductive structure, and overlying a first portion of the metal layer between the first conductive structure and the second conductive structure, wherein an interface exists between the metal layer and at least one of the first conductive structure or the second conductive structure.

The present disclosure provides a semiconductor device. The semiconductor device includes a semiconductor component, a re-routing layer, a bonding dielectric and an insulating layer. The re-routing layer is disposed over the semiconductor component and electrically coupled to the semiconductor component. The bonding dielectric is disposed over the semiconductor component to surround a top portion of the re-routing layer. The insulating layer is disposed between the semiconductor component and the bonding dielectric to surround a bottom portion of the re-routing layer.

A semiconductor device comprises conductive lines, a conductive landing pad in electrical communication with a conductive line of the conductive lines, and a conductive interconnect structure in electrical communication with the conductive landing pad. The conductive interconnect structure comprises a contact plug in electrical communication with the conductive landing pad, and a global interconnect contact in electrical communication with the contact plug and having a greater lateral width than the contact plug. Related electronic systems and method are also disclosed.

Integrated chips and methods of forming conductive lines thereon include forming parallel lines from alternating first and second dummy materials. Portions of the parallel lines are etched, using respective selective etches for the first and second dummy materials, to form gaps. The gaps are filled with a dielectric material. The first and second dummy materials are etched away to form trenches. The trenches are filled with conductive material.

A semiconductor arrangement is provided. The semiconductor arrangement includes a first dielectric layer over a substrate, a metal layer over the first dielectric layer, a first conductive structure passing through the metal layer and the first dielectric layer, a second conductive structure passing through the metal layer and the first dielectric layer, and a third conductive structure coupling the first conductive structure to the second conductive structure, and overlying a first portion of the metal layer between the first conductive structure and the second conductive structure, wherein an interface exists between the metal layer and at least one of the first conductive structure or the second conductive structure.

Disclosed herein is a semiconductor device, including: a first substrate including a first electrode, and a first insulating film configured from a diffusion preventing material for the first electrode and covering a periphery of the first electrode, the first electrode and the first insulating film cooperating with each other to configure a bonding face; and a second substrate bonded to and provided on the first substrate and including a second electrode joined to the first electrode, and a second insulating film configured from a diffusion preventing material for the second electrode and covering a periphery of the second electrode, the second electrode and the second insulating film cooperating with each other to configure a bonding face to the first substrate.

A method includes depositing a first dielectric structure over a non-insulator structure, removing a portion of the first dielectric structure to form a via opening, filling the via opening with a dummy structure, depositing a second dielectric structure over the dummy structure, etching a portion of the second dielectric structure to form a trench over the dummy structure, removing the dummy structure from the via opening, and filling the trench opening and the via opening with a conductive structure, wherein the conductive structure is electrically connected to the non-insulator structure.