A method for manufacturing a semiconductor package, the method includes: (A) forming a temporary fixing material layer on the first surface (circuit exposed surface) of a panel member including a plurality of semiconductor packages, (B) attaching an adhesive film to the second surface of the panel member; (C) singulating the panel member and the temporary fixing material layer on the adhesive film to obtain a plurality of temporary fixing material piece-attached semiconductor packages; (D) arranging a plurality of the temporary fixing material piece-attached semiconductor packages on a support carrier so that the distance between the adjacent temporary fixing material piece-attached semiconductor packages is 0.1 mm or more; (E) peeling off the first adhesive film from the support carrier and the plurality of temporary fixing material piece-attached semiconductor packages; and (F) forming a functional layer on surfaces of the plurality of temporary fixing material piece-attached semiconductor packages.

A method includes applying laser pulses along a direction to a side of a wafer to create first and second stealth damage regions at respective first and second depths in the wafer and to create cracks that extend in the wafer from the respective stealth damage regions and that are spaced apart from one another along the direction, applying a compressive and retractive cyclical force to the wafer along the third direction to propagate and join the cracks from the respective stealth damage regions together, and expanding the wafer to separate individual dies from the wafer.

Proposed is a wafer expander for uniformly expanding gaps between dies, and a die supplying module and die bonding equipment including the same. The wafer expander, for supporting a dicing tape to which a plurality of dies are attached and for expanding gaps between the plurality of dies, includes an expander ring detachably coupled to a wafer ring that fixes an edge of the dicing tape, and configured to ascend and descend, and a base ring supporting a bottom side of the dicing tape, and at least a portion thereof is configured to ascend and descend.

A method for producing a multiplicity of semiconductor chips (13) is provided, comprising the following steps: providing a wafer (1) comprising a multiplicity of semiconductor bodies (2), wherein separating lines (9) are arranged between the semiconductor bodies (2), depositing a contact layer (10) on the wafer (1), wherein the material of the contact layer (10) is chosen from the following group: platinum, rhodium, palladium, gold, and the contact layer (10) has a thickness of between 8 nanometres and 250 nanometres, inclusive, applying; the wafer (1) to a film (11), at least partially severing the wafer (1) in the vertical direction along the separating lines (9) or introducing fracture nuclei (12) into the wafer (1) along the separating lines (9), and breaking the wafer (1) along the separating lines (9) or expanding the film (11) such that a spatial separation of the semiconductor chips (13) takes place, wherein the contact layer (10) is also separated. A semiconductor chip, a component and a method for producing the latter are also provided.

A method for manufacturing a semiconductor device includes selectively forming an insulating film on a region of a substrate serving as a scribe line; and forming a first semiconductor layer in a state where a cavity is provided on the insulating film. The cavity is buried in the first semiconductor layer.

A display apparatus including a panel substrate, and a light emitting source disposed on the panel substrate, in which the light emitting source includes a substrate, an electrode disposed on the substrate, a light emitting structure disposed on the electrode and having an n-type semiconductor layer, a p-type semiconductor layer, an n-type electrode, and a p-type electrode, a transparent electrode disposed on the light emitting structure, and an adhesive layer disposed on the light emitting structure, the n-type electrode is electrically connected to the electrode, the p-type electrode is electrically connected to the transparent electrode, and the adhesive layer is disposed between the p-type electrode and the transparent electrode.

A wafer supporting mechanism and a method for wafer dicing are provided. The wafer supporting mechanism includes a base portion and a support portion. The base portion includes a first gas channel and a first outlet connected to the first gas channel. The support portion is connected to the base portion and including a second gas channel connected to the first gas channel. An accommodation space is defined by the base portion and the support portion.

There is provided a processing method of a workpiece by which the workpiece is processed. The processing method includes a thermocompression bonding step of executing thermocompression bonding of a first sheet composed of a thermoplastic resin to a front surface side of the workpiece by disposing the first sheet on the front surface side of the workpiece and heating the first sheet, a processing step of processing the workpiece together with the first sheet, and a separation step of separating the first sheet from the workpiece by moving a second sheet composed of a thermoplastic resin after executing thermocompression bonding of the second sheet to the first sheet by disposing the second sheet on the first sheet processed and heating the second sheet.

An apparatus for expanding chips of a wafer, wherein the apparatus comprises an expansion mechanism configured for expanding a tape on which the chips of the wafer are arranged, and an inflation mechanism configured for inflating at least a part of an edge portion of the tape so that part of the edge portion approaches a frame.

A manufacturing method includes the step of forming a diced semiconductor wafer (10) including semiconductor chips (11) from a semiconductor wafer (W) typically on a dicing tape (T1). The diced semiconductor wafer (10) on the dicing tape (T1) is laminated with a sinter-bonding sheet (20). The semiconductor chips (11) each with a sinter-bonding material layer (21) derived from the sinter-bonding sheet (20) are picked up typically from the dicing tape (T1). The semiconductor chips (11) each with the sinter-bonding material layer are temporarily secured through the sinter-bonding material layer (21) to a substrate. Through a heating process, sintered layers are formed from the sinter-bonding material layers (21) lying between the temporarily secured semiconductor chips (11) and the substrate, to bond the semiconductor chips (11) to the substrate. The semiconductor device manufacturing method is suitable for efficiently supplying a sinter-bonding material to individual semiconductor chips while reducing loss of the sinter-bonding material.