Techniques for signal routing between a host and dynamic random-access memory (DRAM) are provided. In an example, a routing layer for a dynamic random-access memory die (DRAM can include multiple through silicon via (TSV) terminations configured to electrically couple with TSVs of the DRAM, an intermediate interface area, and multiple routing traces. the multiple TSV terminations can be arranged in multiple TSV areas. The multiple TSV areas can be arranged in two columns. The intermediate interface area can include multiple micro-pillar bump terminations configured to couple, via a micro-pillar bump, with corresponding micro-pillar bump terminations of a semiconductor interposer. The multiple routing traces can couple control TSV terminations of the multiple TSV areas with a corresponding micro-pillar bump termination of the intermediate interface.

A package structure includes a semiconductor device, a molding compound, a first dielectric layer, and a through-via. The molding compound is in contact with a sidewall of the semiconductor device. The first dielectric layer is over the molding compound and the semiconductor device. The through-via is in the molding compound and the first dielectric layer. The through-via is a continuous element and in contact with the first dielectric layer.

A method for forming microvias for packaging applications is disclosed. A sacrificial photosensitive material is developed to form microvias with reduced diameter and improved placement accuracy. The microvias are filled with a conductive material and the surrounding dielectric is removed and replaced with an RDL polymer layer.

A method for forming microvias for packaging applications is disclosed. A sacrificial photosensitive material is developed to form microvias with reduced diameter and improved placement accuracy. The microvias are filled with a conductive material and the surrounding dielectric is removed and replaced with an RDL polymer layer.

Techniques for signal routing between a host and dynamic random-access memory (DRAM) are provided. In an example, a routing layer for a dynamic random-access memory die (DRAM can include multiple through silicon via (TSV) terminations configured to electrically couple with TSVs of the DRAM, an intermediate interface area, and multiple routing traces. the multiple TSV terminations can be arranged in multiple TSV areas. The multiple TSV areas can be arranged in two columns. The intermediate interface area can include multiple micro-pillar bump terminations configured to couple, via a micro-pillar bump, with corresponding micro-pillar bump terminations of a semiconductor interposer. The multiple routing traces can couple control TSV terminations of the multiple TSV areas with a corresponding micro-pillar bump termination of the intermediate interface.

A method includes forming a release film over a carrier, forming a polymer buffer layer over the release film, forming a metal post on the polymer buffer layer, encapsulating the metal post in an encapsulating material, performing a planarization on the encapsulating material to expose the metal post, forming a redistribution structure over the encapsulating material and the metal post, and decomposing a first portion of the release film. A second portion of the release film remains after the decomposing. An opening is formed in the polymer buffer layer to expose the metal post.

A method includes forming a release film over a carrier, forming a polymer buffer layer over the release film, forming a metal post on the polymer buffer layer, encapsulating the metal post in an encapsulating material, performing a planarization on the encapsulating material to expose the metal post, forming a redistribution structure over the encapsulating material and the metal post, and decomposing a first portion of the release film. A second portion of the release film remains after the decomposing. An opening is formed in the polymer buffer layer to expose the metal post.

A method for forming microvias for packaging applications is disclosed. A sacrificial photosensitive material is developed to form microvias with reduced diameter and improved placement accuracy. The microvias are filled with a conductive material and the surrounding dielectric is removed and replaced with an RDL polymer layer.

A method for forming microvias for packaging applications is disclosed. A sacrificial photosensitive material is developed to form microvias with reduced diameter and improved placement accuracy. The microvias are filled with a conductive material and the surrounding dielectric is removed and replaced with an RDL polymer layer.

A semiconductor device is disclosed including one or more stacks of semiconductor dies vertically molded together in an encapsulated block. The semiconductor dies may comprise memory dies, or memory dies and a controller die.