A semiconductor device has a semiconductor wafer including a plurality of semiconductor die and a plurality of contact pads formed over a first surface of the semiconductor wafer. A trench is formed partially through the first surface of the semiconductor wafer. An insulating material is disposed over the first surface of the semiconductor wafer and into the trench. A conductive layer is formed over the contact pads. The conductive layer can be printed to extend over the insulating material in the trench between adjacent contact pads. A portion of the semiconductor wafer opposite the first surface of the semiconductor wafer is removed to the insulating material in the trench. An insulating layer is formed over a second surface of the semiconductor wafer and side surfaces of the semiconductor wafer. The semiconductor wafer is singulated through the insulating material in the first trench to separate the semiconductor die.

The present disclosure relates to a semiconductor chip, having an aluminium layer, wherein said aluminium layer has a structuration of at least a portion of a surface receiving an additional deposition of either copper or epoxy resin, and wherein said structuration forms peaks on said portion of surface occupying between 20 and 80% of said portion of surface.

The disclosed subject matter relates to liquid metal interconnects for power semiconductor modules. For example, disclosed herein are semiconductor package devices, comprising: a semiconductor device comprising an electrode and/or contact pad; a solid metal circuit element; and a liquid metal interface comprising a liquid metal material. The liquid metal interface can append at least a portion of the solid metal circuit element to at least a portion of the electrode and/or contact pad within a contact area. Adhesive forces, cohesive forces, surface tension forces, capillary forces, viscosity, and/or wetting characteristics enable containment of the liquid metal interface within the contact area. Also disclosed herein are methods of making and use of any of the devices disclosed herein.