The semiconductor package according to the present invention comprises: an integrated substrate; a bottom chip stack, which is mounted on the integrated substrate, has multiple memory semiconductor dies stacked chip-on-chip, and takes charge of a part of the whole memory capacity; at least one top chip stack, which is mounted on the bottom package, has multiple memory semiconductor dies mounted therein, and takes charge of the rest of the whole memory capacity; an integration wire for electrically connecting the bottom chip stack and the top chip stack(s); and an integration protection member for sealing the integration wire.

A stacked-chip assembly including an IC chip or die that is electrically interconnected to another chip and/or a substrate by one or more traces that are coupled through sidewalls of the chip. Electrical traces extending over a sidewall of the chip may contact metal traces of one or more die interconnect levels that intersect the chip edge. Following chip fabrication, singulation may expose a metal trace that intersects the chip sidewall. Following singulation, a conductive sidewall interconnect trace formed over the chip sidewall is to couple the exposed trace to a top or bottom side of a chip or substrate. The sidewall interconnect trace may be further coupled to a ground, signal, or power rail. The sidewall interconnect trace may terminate with a bond pad to which another chip, substrate, or wire lead is bonded. The sidewall interconnect trace may terminate at another sidewall location on the same chip or another chip.

A method of manufacturing a layer structure includes: forming a first layer over a substrate; planarizing the first layer to form a planarized surface of the first layer; and forming a second layer over the planarized surface; wherein a porosity of the first layer is greater than a porosity of the substrate and greater than a porosity of the second layer; wherein the second layer is formed by physical vapor deposition; and wherein the first layer and the second layer are formed from the same solid material.

A semiconductor device has a semiconductor wafer including a plurality of semiconductor die and a plurality of contact pads formed over a first surface of the semiconductor wafer. A trench is formed partially through the first surface of the semiconductor wafer. An insulating material is disposed over the first surface of the semiconductor wafer and into the trench. A conductive layer is formed over the contact pads. The conductive layer can be printed to extend over the insulating material in the trench between adjacent contact pads. A portion of the semiconductor wafer opposite the first surface of the semiconductor wafer is removed to the insulating material in the trench. An insulating layer is formed over a second surface of the semiconductor wafer and side surfaces of the semiconductor wafer. The semiconductor wafer is singulated through the insulating material in the first trench to separate the semiconductor die.

A semiconductor device has a semiconductor wafer including a plurality of semiconductor die and a plurality of contact pads formed over a first surface of the semiconductor wafer. A trench is formed partially through the first surface of the semiconductor wafer. An insulating material is disposed over the first surface of the semiconductor wafer and into the trench. A conductive layer is formed over the contact pads. The conductive layer can be printed to extend over the insulating material in the trench between adjacent contact pads. A portion of the semiconductor wafer opposite the first surface of the semiconductor wafer is removed to the insulating material in the trench. An insulating layer is formed over a second surface of the semiconductor wafer and side surfaces of the semiconductor wafer. The semiconductor wafer is singulated through the insulating material in the first trench to separate the semiconductor die.

A method of manufacturing a layer structure includes: forming a first layer over a substrate; planarizing the first layer to form a planarized surface of the first layer; and forming a second layer over the planarized surface; wherein a porosity of the first layer is greater than a porosity of the substrate and greater than a porosity of the second layer; wherein the second layer is formed by physical vapor deposition; and wherein the first layer and the second layer are formed from the same solid material.

A three-dimensional semiconductor device using redundant bonding-conductor structures to make inter-level electrical connections between multiple semiconductor chips is disclosed. A first chip, or other semiconductor substrate, forms a first active area on its upper surface, and a second chip or other semiconductor substrate forms a second active area on its upper surface. According to the present invention, when the second chip has been mounted above the first chip, either face-up or face-down, the first active area is coupled to the second active area by at least one redundant bonding-conductor structure. In one embodiment, each redundant bonding-conductor structure includes at least one via portion that extends completely through the second chip to perform this function. In another, the redundant bonding-conductor structure extends downward to the top level interconnect. The present invention also includes a method for making such a device.

A method of manufacturing an electronic device may include: forming at least one electronic component in a substrate; forming a contact pad in electrical contact with the at least one electronic component; wherein forming the contact pad includes: forming a first layer over the substrate; planarizing the first layer to form a planarized surface of the first layer; and forming a second layer over the planarized surface, wherein the second layer has a lower porosity than the first layer.

A manufacturing method of a chip package includes the following steps. A patterned solder paste layer is printed on a patterned conductive layer of a wafer. Plural solder balls are disposed on the solder paste layer that is on a first portion of the conductive layer. A reflow process is performed on the solder balls and the solder paste layer. A flux layer converted from a surface of the solder paste layer is cleaned.

A 3D microstructure is formed by hybrid bonding a top wafer on a bottom wafer, by a hybrid bond with metal bonding pads at the interface between the upper metallization level (HBM) of the respective interconnect structure of each of the wafers. These interconnect structures further include a horizontal interconnect level (MX) which is directly below the upper interconnect level (HBM). These pads are distributed horizontally substantially homogeneously and with a fine bonding pitch. Out of these pads, purely bonding pads are electrically insulated from any horizontal metallization element of the horizontal interconnect level (MX). Conversely, bonding and electrical connection pads are electrically coupled, without vias, to an underlying horizontal metallization element formed in the horizontal interconnect level (MX).