A package structure including a first semiconductor die, a second semiconductor die, first conductive pillars and a first insulating encapsulation is provided. The first semiconductor die includes a semiconductor substrate, an interconnect structure and a first redistribution circuit structure. The semiconductor substrate includes a first portion and a second portion disposed on the first portion. The interconnect structure is disposed on the second portion, the first redistribution circuit structure is disposed on the interconnect structure, and the lateral dimension of the first portion is greater than the lateral dimension of the second portion. The second semiconductor die is disposed on the first semiconductor die. The first conductive pillars are disposed on the first redistribution circuit structure of the first semiconductor die. The first insulating encapsulation is disposed on the first portion. The first insulating encapsulation laterally encapsulates the second semiconductor die, the first conductive pillars and the second portion.

Embodiments include a mixed hybrid bonding structure comprising a composite dielectric layer, where the composite dielectric layer comprises an organic dielectric material having a plurality of inorganic filler material. One or more conductive substrate interconnect structures are within the composite dielectric layer. A die is on the composite dielectric layer, the die having one or more conductive die interconnect structures within a die dielectric material. The one or more conductive die interconnect structures are directly bonded to the one or more conductive substrate interconnect structures, and the inorganic filler material of the composite dielectric layer is bonded to the die dielectric material.

An electronic device includes a first electronic chip, a second electronic chip, and an interconnection circuit. A first region of a first surface of the first electronic chip is assembled by hybrid bonding to a third region of a third surface of the interconnection circuit. A second region of a second surface of the second electronic chip is assembled by hybrid to a fourth region of the third surface of the interconnection circuit. In this configuration, the first electronic chip is electrically coupled to the second electronic chip through the interconnection circuit. The first surface of the first electronic chip further includes a fifth region which is not in contact with the interconnection circuit. This fifth region includes a connection pad electrically connected by a connection element to a connection substrate to which the interconnection circuit is mounted.

Embodiments include a mixed hybrid bonding structure comprising a composite dielectric layer, where the composite dielectric layer comprises an organic dielectric material having a plurality of inorganic filler material. One or more conductive substrate interconnect structures are within the composite dielectric layer. A die is on the composite dielectric layer, the die having one or more conductive die interconnect structures within a die dielectric material. The one or more conductive die interconnect structures are directly bonded to the one or more conductive substrate interconnect structures, and the inorganic filler material of the composite dielectric layer is bonded to the die dielectric material.

Effective use is achieved of a region in a proximity of a joining plane of semiconductor substrates in a semiconductor device including a stacked semiconductor substrate in which multilayer wiring layers of a plurality of semiconductor substrates are electrically connected to each other. The stacked semiconductor substrate includes plural semiconductor substrates on each of which a multilayer wiring layer is formed. In this stacked semiconductor substrate, the multilayer wiring layers are joined together and electrically connected to each other. In the proximity of a joining plane of the plurality of semiconductor substrates, a conductor is formed. This conductor is formed such that it is electrified in a direction of the joining plane.

A package structure includes a plurality of stacked die units and an insulating encapsulant. The plurality of stacked die units is stacked on top of one another, where each of the plurality of stacked die units include a first semiconductor die, a first bonding chip. The first semiconductor die has a plurality of first bonding pads. The first bonding chip is stacked on the first semiconductor die and has a plurality of first bonding structure. The plurality of first bonding structures is bonded to the plurality of first bonding pads through hybrid bonding. The insulating encapsulant is encapsulating the plurality of stacked die units.

A semiconductor package includes a substrate including a first semiconductor chip including a first wiring structure, a first bonding pad, and a first alignment key on the first wiring structure to be spaced apart in a first direction, a second semiconductor chip including a second wiring structure, a second bonding pad on the second wiring structure and connected to the first bonding pad, and a second alignment key on the second wiring structure to be spaced apart from the second bonding pad and not overlapping the first alignment key in the second direction, the first wiring structure including a first wiring pattern connected to the first bonding pad and not overlapping the first and second alignment keys in the second direction, and the second wiring structure including a second wiring pattern connected to the second bonding pad and not overlapping the first and second alignment keys in the second direction.

A semiconductor device includes a first semiconductor chip that includes a first conductive pad whose top surface is exposed; and a second semiconductor chip that includes a second conductive pad whose top surface is exposed and in contact with at least a portion of the top surface of the first conductive pad. The first semiconductor chip may include a first diffusion barrier in contact with a bottom surface of the first conductive pad, and a second diffusion barrier in contact with a lateral surface of the first conductive pad, and the first diffusion barrier and the second diffusion barrier may include different materials from each other.

A package device includes a first device die and second device die bonded thereto. When the area of the second device die is less than half the area of the first device die, one or more inactive structures having a semiconductor substrate is also bonded to the first device die so that the combined area of the second device die and the one or more inactive structures is greater than half the area of the first device die.

A semiconductor package includes: a first semiconductor chip including a plurality of front surface pads disposed on a first active surface of a first semiconductor substrate, at least one penetrating electrode penetrating at least a portion of the first semiconductor substrate and connected to the front surface pads, a first rear surface cover layer disposed on a first inactive surface of the first semiconductor substrate, a first rear surface dummy conductive layer penetrating a portion of the first rear surface cover layer; a second semiconductor chip including a second front surface cover layer disposed on a second active surface of a second semiconductor substrate, and a second front surface dummy conductive layer penetrating a portion of the second front surface cover layer; and at least one first bonded pad penetrating the first rear surface cover layer and the second front surface cover layer.