A method of manufacturing a three-dimensional semiconductor device includes forming a bi-layer sacrificial stack on a top wafer and a bottom wafer each including a series of interconnects in a dielectric substrate. The bi-layer sacrificial stack includes a second sacrificial layer on a first sacrificial layer. The method also includes selectively etching the second sacrificial layers to form a first pattern of projections on the top wafer and a second pattern of projections on the bottom wafer. The first pattern of projections is configured to mesh with the second pattern of projections. The method also includes positioning the top wafer on the bottom wafer and releasing the top wafer such that engagement between the first pattern of projections and the second pattern of projections self-aligns the plurality of interconnects of the top wafer with the plurality of interconnects of the bottom wafer within a misalignment error.

An assembly platform for arrangement as an interposer device between an integrated circuit and a substrate to interconnect the integrated circuit and the substrate through the assembly platform, the assembly platform comprising: an assembly substrate; a plurality of conducting vias extending through the assembly substrate; at least one nanostructure connection bump on a first side of the assembly substrate, the nanostructure connection bump being conductively connected to the vias and defining connection locations for connection with at least one of the integrated circuit and the substrate, wherein each of the nanostructure connection bumps comprises: a plurality of elongated conductive nanostructures vertically grown on the first side of the assembly substrate, wherein the plurality of elongated nanostructures are embedded in a metal for the connection with at least one of the integrated circuit and the substrate, at least one connection bump on a second side of the assembly substrate, the second side being opposite to the first side, the connection bump being conductively connected to the vias and defining connection locations for connection with at least one of the integrated circuit and the substrate.

An example apparatus includes a semiconductor die including a bond pad; a conductive post on the bond pad; a solder joint electrically connecting the conductive post to a substrate; and ink residue of solder mask material surrounding a portion of the solder joint, the ink residue covering a portion of the substrate. Methods for forming the apparatus are disclosed.

An integrated circuit (IC) package product, e.g., system-on-chip (SoC) or system-in-package (SiP) product, may include at least one integrated inductor having a core magnetic field (B field) that extends parallel to the substrate major plane of at least one die or chiplet included in or mounted to the product, which may reduce the eddy currents within each die/chiplet substrate, and thereby reduce energy loss of the indictor. The IC package product may include a horizontally-extending IC package substrate, a horizontally-extending die mount base arranged on the IC package substrate, at least one die mounted to the die mount base in a vertical orientation, and an integrated inductor having a B field extending in a vertical direction parallel to the silicon substrate of each vertically-mounted die, thereby providing a reduced substrate loss in the integrated inductor, which provides an increased quality factor (Q) of the inductor.

A semiconductor package includes a package substrate; a semiconductor die vertically stacked on the package substrate; a redistribution layer (RDL) including a dielectric material and metal features that electrically connect the semiconductor die to the package substrate, the RDL having a first Young's modulus; a first underfill layer disposed between the RDL and the semiconductor die; and stress buffers embedded in the RDL below corners of the semiconductor die, each stress buffer having a second Youngs modulus that is at least 30% less than the first Youngs modulus.

A solution relating to electronic devices of flip-chip type is provided, which includes at least one chip carrier having a carrier surface, the carrier(s) including one or more contact elements of electrically conductive material on the carrier surface, at least one integrated circuit chip having a chip surface, the chip(s) including one or more terminals of electrically conductive material on the chip surface each one facing a corresponding contact element, solder material soldering each terminal to the corresponding contact element, and a restrain structure around the contact elements for restraining the solder material during a soldering of the terminals to the contact elements. The carrier includes one or more heat dissipation elements of thermally conductive material on the carrier surface facing the chip surface displaced from the terminals, the dissipation elements being free of any solder mask.

A semiconductor device package includes a substrate, a semiconductor device, and an underfill. The semiconductor device is disposed on the substrate. The semiconductor device includes a first lateral surface. The underfill is disposed between the substrate and the semiconductor device. The underfill includes a first lateral surface. The first lateral surface of the underfill and the first lateral surface of the semiconductor device are substantially coplanar.

An assembly platform for arrangement as an interposer device between an integrated circuit and a substrate to interconnect the integrated circuit and the substrate through the assembly platform, the assembly platform comprising: an assembly substrate; a plurality of conducting vias extending through the assembly substrate; at least one nanostructure connection bump on a first side of the assembly substrate, the nanostructure connection bump being conductively connected to the vias and defining connection locations for connection with at least one of the integrated circuit and the substrate, wherein each of the nanostructure connection bumps comprises: a plurality of elongated conductive nanostructures vertically grown on the first side of the assembly substrate, wherein the plurality of elongated nanostructures are embedded in a metal for the connection with at least one of the integrated circuit and the substrate, at least one connection bump on a second side of the assembly substrate, the second side being opposite to the first side, the connection bump being conductively connected to the vias and defining connection locations for connection with at least one of the integrated circuit and the substrate.

Manufacturing of flip-chip type assemblies is provided, and includes forming one or more contact elements of electrically conductive material on a carrier surface of at least one chip carrier, providing a restrain structure around the contact elements, depositing solder material on the contact elements and/or on one or more terminals of electrically conductive material on a chip surface of at least one integrated circuit chip, and placing the chip with each terminal facing corresponding contact elements. Further, the method includes soldering each terminal to the corresponding contact element by a soldering material, the soldering material being restrained during a soldering of the terminals to the contact elements by the restrain structure, and forming one or more heat dissipation elements of thermally conductive material on the carrier surface for facing the chip surface displaced from the terminals, where the one or more heat dissipation elements are free of any solder mask.

A mixed-orientation multi-die (MOMD) integrated circuit package includes dies mounted in different physical orientations. An MOMD package includes both (a) one or more dies horizontally-mounted dies (HMDs) mounted horizontally to a horizontally-extending die mount base and (b) one or more vertically-mounted dies (VMDs) mounted vertically to the horizontally-extending die mount base. HMDs may include FPGAs or other high performance chips, while VMDs may include low performance chips and other physical structures such as heat dissipators, memory, high voltage/analog devices, sensors, or MEMS, for example. The die mount base of an MOMD package may include structures for aligning and mounting VMD(s), for example, VMD slots for receiving each mounted VMD, and VMD alignment structures that facilitate aligning and/or guiding a vertical mounting of each VMD to the die mount base. MOMD packages may provide a reduced lateral footprint and increased die integration per unit area, as compared with conventional multi-die packages.