An example method includes providing a packaging device includes a substrate having an integrated circuit die mounting region. A plurality of microstructures, each including an outer insulating layer over a conductive material, are disposed proximate a side of the integrated circuit die mounting region. An underfill material is disposed between the substrate and the integrated circuit die, the microstructures preventing spread of the underfill. In another example method, a via can be formed in a substrate and the substrate etched to form a bump or pillar from the via. An insulating material can be formed over the bump or pillar. In another example method, a photoresist deposited over a seed layer and patterned to form openings. A conductive material is plated in the openings, forming a plurality of pillars or bumps. The photoresist and exposed seed layer are removed. The conductive material is oxidized to form an insulating material.

A semiconductor device includes a first semiconductor chip including a first surface and a plurality of first electrodes disposed on the first surface; a second semiconductor chip including a second surface which faces the first surface, a plurality of second electrodes each of which includes at least one end disposed on the second surface, and a plurality of first protrusions each of which surrounds the one end of each of the second electrodes on an electrode by electrode basis; a plurality of conductive joint materials each of which joins a third electrode included in the first electrodes to the one end of an electrode which faces the third electrode among the second electrodes; and a plurality of first underfill resins each of which is disposed inside one of the first protrusions and covers one of the conductive joint materials on a material by material basis.

A wiring board includes a single-layer insulating layer, and a single-layer interconnect layer embedded in the insulating layer, wherein an entirety of a first surface of the interconnect layer is exposed in a recessed position relative to a first surface of the insulating layer, and a second surface of the interconnect layer is partially exposed in a recessed position relative to a second surface of the insulating layer.

A semiconductor device has a semiconductor die with a plurality of bumps formed over a surface of the semiconductor die. A first conductive layer having first and second segments is formed over a surface of the substrate with a first vent separating an end of the first segment and the second segment and a second vent separating an end of the second segment and the first segment. A second conductive layer is formed over the surface of the substrate to electrically connect the first segment and second segment. The thickness of the second conductive layer can be less than a thickness of the first conductive layer to form the first vent and second vent. The semiconductor die is mounted to the substrate with the bumps aligned to the first segment and second segment. Bump material from reflow of the bumps is channeled into the first vent and second vent.

A semiconductor device has a semiconductor die having a plurality of die bump pad and substrate having a plurality of conductive trace with an interconnect site. A solder mask patch is formed interstitially between the die bump pads or interconnect sites. A conductive bump material is deposited on the interconnect sites or die bump pads. The semiconductor die is mounted to the substrate so that the conductive bump material is disposed between the die bump pads and interconnect sites. The conductive bump material is reflowed without a solder mask around the die bump pad or interconnect site to form an interconnect structure between the semiconductor die and substrate. The solder mask patch confines the conductive bump material within the die bump pad or interconnect site. The interconnect structure can include a fusible portion and non-fusible portion. An encapsulant is deposited between the semiconductor die and substrate.

A package substrate includes: an insulating substrate, a first and a second soldering pads spacedly disposed on a first surface of the insulating substrate, a first and a second electrodes spacedly disposed on an opposite second surface of the insulting substrate. The first and the second soldering pads are electrically connected to the first and the second electrodes respectively. Moreover, a first and a second grooves are defined on the first surface of the insulating substrate, the first and the second grooves are spaced from each other and disposed between the first and the second soldering pads. The invention further provides a LED flip chip package structure including the package substrate, a LED flip chip and fluorescent glue. The invention adds the grooves in the spacing between the soldering pads as a buffer space for melted solder flowing during reflow soldering process and therefore can relieve short-circuit phenomenon.

A semiconductor chip includes a chip body and a plurality of solder-including electrodes provided on an element-formation surface of the chip body. A packaging substrate includes a substrate body, and a plurality of wirings and a solder resist layer that are provided on a front surface of the substrate body. The plurality of solder-including electrodes include a plurality of first electrodes and a plurality of second electrodes. The plurality of first electrodes supply a first electric potential, and the plurality of second electrodes supply a second electric potential different from the first electric potential. The plurality of first electrodes and the plurality of second electrodes are disposed alternately in both a row direction and a column direction, in a central part of the chip body. The plurality of wirings include a plurality of first wirings and a plurality of second wirings. The plurality of first wirings connect the plurality of first electrodes, and the plurality of second wirings connect the plurality of second electrodes.

The present disclosure provides a semiconductor package that prevents a bump bridge from being formed between adjacent conductive bumps to realize a fine bump pitch when each unit circuit part is directly stacked without using a printed circuit board and a method for manufacturing the same. The semiconductor package includes a first semiconductor chip structure including a first unit circuit part, a first passivation layer disposed on the first unit circuit part, and a conductive bump electrically connected to the first unit circuit part, and a second semiconductor chip structure including a second unit circuit part, a second passivation layer having a stepped portion that is recessed inward and disposed on the second unit circuit part, and a bump pad provided in the stepped portion. The first semiconductor chip structure and the second semiconductor chip structure are stacked to allow the conductive bump to be bonded to the bump pad within the stepped portion.

The invention relates to a support and/or clip for at least one semiconductor element with at least one functional surface (10) for connecting to the semiconductor element. The invention is further characterized by at least one solder resist cavity (12) with at least one flank wall (13), in particular a straight flank wall (13), and a delimiting edge (14) which adjoins the flank wall (13) and delimits the functional surface (10) at least on one side. The delimiting edge (14) forms a protrusion (15) which protrudes past the functional surface (10) in order to retain solder, and/or the flank wall (13) forms an undercut (16) for retaining solder at the delimiting edge (14).

An interconnect structure and method for manufacturing the same includes a substrate and a copper trace line defined on a surface of the substrate. The copper trace line includes a transmission line and a contact pad. The copper trace line is plated with a layer of metal which will oxidize if exposed to the atmosphere. The layer of metal is further plated with a layer of gold. The gold layer is selectively applied to the transmission line and the contact pad to define a gap on the transmission line at the contact pad. The metal layer is exposed in the gap. An oxide layer is formed on the metal layer in the gap. The oxide layer and the substrate surround the contact pad define a barrier to spread of solder.