An electronic package and a packaging method are provided. The packaging method comprises: forming on a carrier film a first photoresist pattern having multiple sets of first openings; filling in the multiple sets of first openings of the first photoresist pattern with a solder material to form multiple sets of solder bumps; forming on the first photoresist pattern a second photoresist pattern having multiple second openings each exposing a set of the sets of solder bumps; attaching one or more electronic components to the set of solder bumps in each of the second openings; filling in the second openings of the second photoresist pattern with an encapsulant material to form an encapsulant layer that at least partially encapsulates the one or more electronic components in each of the second openings; and removing the second photoresist pattern from the carrier film to form multiple electronic packages.

Representative implementations of devices and techniques provide interconnect structures and components for coupling various carriers, printed circuit board (PCB) components, integrated circuit (IC) dice, and the like, using tall and/or fine pitch physical connections. Multiple layers of conductive structures or materials are arranged to form the interconnect structures and components. Nonwettable barriers may be used with one or more of the layers to form a shape, including a pitch of one or more of the layers.

A method of manufacturing a semiconductor device includes providing a semiconductor substrate including a conductive pad disposed thereon; disposing a polymeric material over the semiconductor substrate and the conductive pad; patterning the polymeric material to form an opening exposing at least a portion of the conductive pad; disposing a conductive layer over the polymeric material and the portion of the conductive pad; and forming a conductor over the portion of the conductive pad and within the opening.

Highly reliable chip mounting is accomplished by using a substrate having such a shape that a stress exerted on a flip-chip-connected chip can be reduced, so that the stress exerted on the chip is reduced and separation of an interlayer insulating layer having a low dielectric constant (low-k) is minimized. Specifically, in a chip mounting structure, a chip including an interlayer insulating layer having a low dielectric constant (low-k) is flip-chip connected to a substrate via bumps is shown. In the chip mounting structure, the substrate has such a shape that a mechanical stress exerted on the interlayer insulating layer at corner portions of the chip due to a thermal stress is reduced, the thermal stress occurring due to a difference in coefficient of thermal expansion between the chip and the substrate.

Highly reliable chip mounting is accomplished by using a substrate having such a shape that a stress exerted on a flip-chip-connected chip can be reduced, so that the stress exerted on the chip is reduced and separation of an interlayer insulating layer having a low dielectric constant (low-k) is minimized. Specifically, in a chip mounting structure, a chip including an interlayer insulating layer having a low dielectric constant (low-k) is flip-chip connected to a substrate via bumps is shown. In the chip mounting structure, the substrate has such a shape that a mechanical stress exerted on the interlayer insulating layer at corner portions of the chip due to a thermal stress is reduced, the thermal stress occurring due to a difference in coefficient of thermal expansion between the chip and the substrate.

The present application is applicable to the field of semiconductor technology and provides a method for packaging stacking a flip chip, which includes: placing a filling template on a substrate, the filling template being provided with a through hole of a preset pattern; filling a filling material into the through hole of the filling template, and after the filling material being formed on the substrate, removing the filling template; placing a chip with solder balls on the substrate formed with the filling material, such that at least a portion of the solder balls being covered by the filling material; and connecting the chip to the substrate through the solder balls, and curing the filling material with air gaps formed between the at least a portion of the solder balls covered with the filling material.

An electronic device may include a first die that may include a first set of die contacts. The electronic device may include a second die that may include a second set of die contacts. The electronic device may include a bridge interconnect that may include a first set of bridge contacts and may include a second set of bridge contacts. The first set of bridge contacts may be directly coupled to the first set of die contacts (e.g., with an interconnecting material, such as solder). The second set of bridge contacts may be directly coupled to the second set of die contacts (e.g., with solder). The bridge interconnect may help facilitate electrical communication between the first die and the second die.

A semiconductor package structure has a first electronic component on an insulating layer, a dielectric layer on the insulating layer and surrounding the first electronic component, a second electronic component stacked on the first electronic component, wherein an active surface of the first electronic component faces an active surface of the second electronic component, a molding compound on the first electronic component and surrounding the second electronic component, a third electronic component stacked on the second electronic component and the molding compound.

Representative implementations of devices and techniques provide interconnect structures and components for coupling various carriers, printed circuit board (PCB) components, integrated circuit (IC) dice, and the like, using tall and/or fine pitch physical connections. Multiple layers of conductive structures or materials are arranged to form the interconnect structures and components. Nonwettable barriers may be used with one or more of the layers to form a shape, including a pitch of one or more of the layers.

A structure includes a die substrate; a passivation layer on the die substrate; first and second interconnect structures on the passivation layer; and a barrier on the passivation layer, at least one of the first or second interconnect structures, or a combination thereof. The first and second interconnect structures comprise first and second via portions through the passivation layer to first and second conductive features of the die substrate, respectively. The first and second interconnect structures further comprise first and second pads, respectively, and first and second transition elements on a surface of the passivation layer between the first and second via portion and the first and second pad, respectively. The barrier is disposed between the first pad and the second pad. The barrier does not fully encircle at least one of the first pad or the second pad.