Embodiments are directed to a method of forming a semiconductor chip package and resulting structures having a mixed under-bump metallization (UBM) size and pitch on a single die. A first set of UBMs having a first total plateable surface area is formed on a first region of a die. A second set of UBMs having an equal total plateable surface area is formed on a second region of the die. A solder bump having a calculated solder height is applied to a plateable surface of each UBM. The solder height is calculated such that a volume of solder in the first region is equal to a volume of solder in the second region.

A semiconductor wafer processing method includes a step of forming a laser processed groove on the front side of a semiconductor wafer along each division line, a step of forming a mask layer on a protective layer except in an area above a metal electrode formed in each device on the front side of the wafer, a first etching step of etching the protective layer by using the mask layer to expose each metal electrode, a second etching step of etching the inner surface of each laser processed groove by using the mask layer used in the first etching step, thereby expanding each laser processed groove, and a dividing step of dividing the wafer along each laser processed groove expanded in the second etching step.

A printable component structure includes a chiplet having a semiconductor structure with a top side and a bottom side, one or more top electrical contacts on the top side of the semiconductor structure, and one or more bottom electrical contacts on the bottom side of the semiconductor structure. One or more electrically conductive spikes are in electrical contact with the one or more top electrical contacts. Each spike protrudes from the top side of the semiconductor structure or a layer in contact with the top side of the semiconductor structure.

The present disclosure describes a coaxial-interconnect structure that is integrated into a semiconductor component and methods of forming the coaxial-interconnect structure. The coaxial interconnect-structure, which electrically couples circuitry of an integrated-circuit (IC) die to traces of a packaging substrate, comprises a signal core elongated about an axis, a ground shield elongated about the axis, and an insulator disposed between the signal core and the ground shield.

The present disclosure describes a coaxial-interconnect structure that is integrated into a semiconductor component and methods of forming the coaxial-interconnect structure. The coaxial interconnect-structure, which electrically couples circuitry of an integrated-circuit (IC) die to traces of a packaging substrate, comprises a signal core elongated about an axis, a ground shield elongated about the axis, and an insulator disposed between the signal core and the ground shield.

Some embodiments relate to a three-dimensional (3D) integrated circuit (IC). The 3D IC includes a first IC die comprising a first semiconductor substrate, and a first interconnect structure over the first semiconductor substrate. The 3D IC also includes a second IC die comprising a second semiconductor substrate, and a second interconnect structure that separates the second semiconductor substrate from the first interconnect structure. A seal ring structure separates the first interconnect structure from the second interconnect structure and perimetrically surrounds a gas reservoir between the first IC die and second IC die. The seal ring structure includes a sidewall gas-vent opening structure configured to allow gas to pass between the gas reservoir and an ambient environment surrounding the 3D IC.

Some embodiments relate to a three-dimensional (3D) integrated circuit (IC). The 3D IC includes a first IC die comprising a first semiconductor substrate, and a first interconnect structure over the first semiconductor substrate. The 3D IC also includes a second IC die comprising a second semiconductor substrate, and a second interconnect structure that separates the second semiconductor substrate from the first interconnect structure. A seal ring structure separates the first interconnect structure from the second interconnect structure and perimetrically surrounds a gas reservoir between the first IC die and second IC die. The seal ring structure includes a sidewall gas-vent opening structure configured to allow gas to pass between the gas reservoir and an ambient environment surrounding the 3D IC.

According to example configurations herein, an apparatus comprises a die and a host substrate. The die can include a first transistor and a second transistor. A surface of the die includes multiple conductive elements disposed thereon. The multiple conductive elements on the surface are electrically coupled to respective nodes of the first transistor and the second transistor. Prior to assembly, the first transistor and second transistor are electrically isolated from each other. During assembly, the surface of the die including the respective conductive elements is mounted on a facing of the host substrate. Accordingly, a die including multiple independent transistors can be flipped and mounted to a respective host substrate such as printed circuit board, lead frame, etc.

According to example configurations herein, an apparatus comprises a die and a host substrate. The die can include a first transistor and a second transistor. A surface of the die includes multiple conductive elements disposed thereon. The multiple conductive elements on the surface are electrically coupled to respective nodes of the first transistor and the second transistor. Prior to assembly, the first transistor and second transistor are electrically isolated from each other. During assembly, the surface of the die including the respective conductive elements is mounted on a facing of the host substrate. Accordingly, a die including multiple independent transistors can be flipped and mounted to a respective host substrate such as printed circuit board, lead frame, etc.

A method of fabrication of a semiconducting structure intended to be assembled to a second support by hybridisation. The semiconducting structure comprising an active layer comprising a nitrided semiconductor. The method comprises a step for the formation of at least one first and one second insert and during this step, a nickel layer is formed in contact with the support surface, and a localised physico-chemical etching step of the active layer, a part of the active layer comprising the active region being protected by the nickel layer.