A semiconductor manufacturing apparatus includes; a component separating apparatus configured to separate a defective component from a substrate, a bump conditioning apparatus including an end mill cutter and receiving the substrate following separation of the defective component from the substrate, the bump conditioning apparatus being configured to cut a first connection bump using the end mill cutter to provide a conditioned first connection bump, and the first connection bump being exposed by separating the defective component from the substrate, and a component attaching apparatus configured to receive the substrate following provision of the conditioned first connection bump, and mount a new component including a second connection bump to the substrate by coupling the second connection bump and the conditioned first connection bump.

A bump structure that may be used to interconnect one substrate to another substrate is provided. A conductive pillar is formed on a first substrate such that the conductive pillar has a width different than a contact surface on a second substrate. In an embodiment the conductive pillar of the first substrate has a trapezoidal shape or a shape having tapered sidewalls, thereby providing a conductive pillar having base portion wider than a tip portion. The substrates may each be an integrated circuit die, an interposer, a printed circuit board, a high-density interconnect, or the like.

A tool and a method of reflow are provided. In various embodiments, the tool includes a chamber unit, a wafer lifting system, a heater, and an exhausting unit. The wafer lifting system is disposed in the chamber unit. The heater is coupled to the chamber unit, and configured to heat the wafer. The exhausting unit coupled to the chamber unit, and configured to exhaust gas in the chamber unit. The wafer lifting system is configured to receive and move the wafer in the chamber unit, and to provide a vertical distance between the heater and the wafer in the chamber unit.

Methods and chemical solvents used for cleaning residues on metal contacts during a semiconductor device packaging process are disclosed. A chemical solvent for cleaning a residue formed on a metal contact may comprise a reactive inorganic component and a reactive organic component. The method may comprise spraying a semiconductor device with a chemical solvent at a first pressure, and spraying the semiconductor device with the chemical solvent at a second pressure less than the first pressure.

An interconnect structure and a method of fabrication of the same are introduced. In an embodiment, a post passivation interconnect (PPI) structure is formed over a passivation layer of a substrate. A bump is formed over the PPI structure. A molding layer is formed over the PPI structure. A film is applied over the molding layer and the bump using a roller. The film is removed from over the molding layer and the bump, and the remaining material of the film on the molding layer forms the protective layer. A plasma cleaning is preformed to remove the remaining material of the film on the bump.

A method for manufacturing an electronic component includes positioning a first surface of a first component facing a second surface of a second component in a first state. The first surface has a first pad having a first center. The second surface has a second pad having a second center. At least one of the first or second pads includes a metal member. The method includes melting the metal member and moving the first and second components until the melted metal member contacts both pads, moving at least one of the first or second components in a direction along the first surface, and solidifying the metal member in a second state. A first distance in a direction along the first surface between the first and second centers in the first state is longer than a second distance in the direction between the first and second centers in the second state.

A semiconductor device package and a method for forming the same using an improved solder joint structure are disclosure. The package includes solder joints having a thinner bottom portion than a top portion. The bottom portion is surrounded by a molding compound and the top portion is not surrounded by a molding compound. The method includes depositing and forming a liquid molding compound around an intermediate solder joint using release film, and then etching the molding compound to a reduced height. The resulting solder joint has no waist at the interface of the molding compound and the solder joint. The molding compound has a greater roughness after the etch, greater than about 3 microns, than the molding compound as formed.

A method of manufacturing a substrate layered body includes: a step of applying a bonding material to the surface of at least one of a first substrate or a second substrate; a step of curing the bonding material applied on the surface to form a bonding layer having a reduced modulus at 23° C. of 10 GPa or less; and a step of bonding the first substrate and the second substrate via the bonding layer formed.

A method includes picking up a first package component, removing an oxide layer on an electrical connector of the first package component, placing the first package component on a second package component after the oxide layer is removed, and bonding the first package component to the second package component.

This application relates to semiconductor manufacturing, and more particularly to an interconnect structure for semiconductors with an ultra-fine pitch and a forming method thereof. The forming method includes: preparing copper nanoparticles using a vapor deposition device, where coupling parameters of the vapor deposition device are adjusted to control an initial particle size of the copper nanoparticles; depositing the copper nanoparticles on a substrate; invertedly placing a chip with copper pillars as I/O ports on the substrate; and subjecting the chip and the substrate to hot-pressing sintering to enable the bonding.