Patent classifications
H
H01
H01L
2224/00
H01L2224/01
H01L2224/10
H01L2224/11
H01L2224/119
H01L2224/11914
H01L2224/11914
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
A barrier layer BAL is formed so as to be in contact with an aluminum pad ALP. A titanium alloy layer including a titanium film and a titanium nitride film is formed as barrier layer BAL. A seed layer SED is formed so as to be in contact with barrier layer BAL. A copper film is formed as seed layer SED. A silver bump AGBP is formed so as to be in contact with seed layer SED. Silver bump AGBP is constructed with a silver film AGPL formed by an electrolytic plating method. A tin alloy ball SNB is bonded to silver bump AGBP.