A die includes a substrate, a metal pad over the substrate, and a passivation layer covering edge portions of the metal pad. A metal pillar is formed over the metal pad. A portion of the metal pillar overlaps a portion of the metal pad. A center of the metal pillar is misaligned with a center of the metal pad.

A semiconductor device includes a contact region over a substrate. The semiconductor device further includes a metal pad over the contact region. Additionally, the semiconductor device includes a post passivation interconnect (PPI) line over the metal pad, where the PPI line is in contact with the metal pad. Furthermore, the semiconductor device includes an under-bump-metallurgy (UBM) layer over the PPI line. Moreover, the semiconductor device includes a plurality of solder balls over the UBM layer, the plurality of solder balls being arranged at some, but not all, intersections of a number of columns and rows of a ball pattern.

Packaged microelectronic devices and methods for manufacturing packaged microelectronic devices are disclosed. In one embodiment, a system comprises a semiconductor component including an interposer substrate, a microelectronic die over the interposer substrate, and a connection structure composed of a volume of solder material between the interposer substrate and the microelectronic die. The connection structure can include at least one of (a) a single, unitary structure covering approximately all of the back side of the microelectronic die, and (b) a structure electrically isolated from internal active features of the microelectronic die. In some embodiments, the connection structure can be positioned to provide generally consistent stress distribution within the system.

Systems and methods are provided for stacked semiconductor memory packages. Each package can include an integrated circuit (IC) package substrate capable of transmitting data to memory dies stacked within the package over two channels. Each channel can be located on one side of the IC package substrate, and signals from each channel can be routed to the memory dies from their respective sides.

A die includes a substrate, a metal pad over the substrate, and a passivation layer covering edge portions of the metal pad. A metal pillar is formed over the metal pad. A portion of the metal pillar overlaps a portion of the metal pad. A center of the metal pillar is misaligned with a center of the metal pad.

A structure and method for performing metal-to-metal bonding in an electrical device. For example and without limitation, various aspects of this disclosure provide a structure and method that utilize an interlocking structure configured to enhance metal-to-metal bonding.

Systems and methods are provided for stacked semiconductor memory packages. Each package can include an integrated circuit (IC) package substrate capable of transmitting data to memory dies stacked within the package over two channels. Each channel can be located on one side of the IC package substrate, and signals from each channel can be routed to the memory dies from their respective sides.

A die includes a substrate, a metal pad over the substrate, and a passivation layer covering edge portions of the metal pad. A metal pillar is formed over the metal pad. A portion of the metal pillar overlaps a portion of the metal pad. A center of the metal pillar is misaligned with a center of the metal pad.

In some forms, an electronic assembly includes a substrate; and a ball pad mounted on the substrate, wherein the ball pad includes a plurality of lobes projecting distally from a center of the ball pad. In some forms, he electronic assembly includes a substrate; and a ball pad mounted on the substrate, wherein the ball pad includes a lobe projecting distally from a center of the ball pad. In some forms, the electronic assembly includes a substrate; and a ball pad mounted on the substrate, wherein the ball pad includes at least one lobe projecting distally from a center of the ball pad; and an electronic package that includes at least one conductor that electrically connects the ball pad on the substrate to the electronic package.

A chip structure is provided, which includes: a substrate having a plurality of conductive pads formed on a surface thereof; a first copper layer formed on each of the conductive pads; a nickel layer formed on the first copper layer; a second copper layer formed on the nickel layer; and a tin layer formed on the second copper layer, thereby effectively reducing stresses.