A semiconductor package includes a semiconductor chip having a first surface that is an active surface and a second surface opposing the first surface, a first redistribution portion disposed on the first surface, the first redistribution portion including a lower wiring layer electrically connected to the semiconductor chip, a thermal conductive layer disposed on the second surface of the semiconductor chip, a sealing layer surrounding a side surface of the semiconductor chip and a side surface of the thermal conductive layer, and a second redistribution portion disposed on the sealing layer, the second redistribution portion including a first upper wiring layer connected to the thermal conductive layer, the second redistribution portion including a second upper wiring layer electrically connected to the semiconductor chip.

A method includes forming a seed layer over a first conductive feature of a wafer, forming a patterned plating mask on the seed layer, and plating a second conductive feature in an opening in the patterned plating mask. The plating includes performing a plurality of plating cycles, with each of the plurality of plating cycles including a first plating process performed using a first plating current density, and a second plating process performed using a second plating current density lower than the first plating current density. The patterned plating mask is then removed, and the seed layer is etched.

An IC package structure and associated packaging method. The IC package structure may include an array of package units formed into a panel, wherein each one of the array of package units comprises at least one IC chip/IC die. Each IC chip/IC die may be at least partially covered and wrapped by an encapsulation layer having one or more openings to expose entire or at least a portion of a back surface of each IC chip/IC die. A metal layer may be electroplated on entire back side of the IC package structure to fill the openings in the encapsulation layer so that the metal layer is in direct contact with the exposed portions of the back surface of each IC chip/IC die.

A semiconductor device assembly is provided. The assembly includes a redistribution layer (RDL) including a plurality of external contacts on a first side and a plurality of internal contacts on a second side opposite the first side. The assembly further includes a first die at least partially embedded in the RDL and having an active surface between the first side and the second side of the RDL. The assembly further includes one or more second dies disposed over the controller die and the RDL, wherein the one or more second dies electrically coupled to the internal contacts. The assembly further includes an encapsulant at least partially encapsulating the one or more second dies.

A method of manufacturing a semiconductor device, including: bonding a first chip layer comprising a first semiconductor chip to a second chip layer comprising a second semiconductor chip to electrically couple an interconnect of the first semiconductor chip to a first interconnect of the second semiconductor chip; and bonding a third chip layer comprising a third semiconductor chip to the second chip layer to electrically couple an interconnect of the third semiconductor chip to a second interconnect of the second semiconductor chip.

A first substrate having a first face and a second face is prepared. The first face has a plurality of product regions defined thereon. An electrode pad forming side of each of a semiconductor chip stack and a semiconductor chip is attached to each corresponding product region of the plurality of product regions. The second face of the first substrate is thinned. A first inorganic insulating layer is formed on the second face. A first vertical interconnection penetrates the first inorganic insulating layer and the first substrate and is electrically connected to an electrode pad of the semiconductor chip stack. A second vertical interconnection penetrates the first inorganic insulating layer and the first substrate and is electrically connected to an electrode pad of the semiconductor chip. A first horizontal interconnection electrically connects a part of the first vertical interconnection to a part of the second vertical interconnection.

A semiconductor package includes a die, a dummy die, a plurality of conductive terminals, an insulating layer and a plurality of thermal through vias. The dummy die is disposed aside the die. The conductive terminals are disposed at a first side of the dummy die and the die and electrically connected to the dummy die and the die. The insulating layer is disposed at a second side opposite to the first side of the dummy die and the die. The thermal through vias penetrating through the insulating layer.

A die package and method is disclosed. In one example, the die package includes a die having a first die contact on a first side and a second die contact on a second side opposite the first side, and insulating material laterally adjacent to the die. A metal structure substantially directly contacts the surface of the second die contact, wherein the metal structure is made of the same material as the second die contact. A first pad contact on the first side of the die electrically contacts the first die contact, and a second pad contact on the first side of the die electrically contacts the second die contact via the metal structure. The insulating material electrically insulates the metal structure from the first die contact.

Various aspects of the present disclosure provide a semiconductor device, for example comprising a finger print sensor, and a method for manufacturing thereof. Various aspects of the present disclosure may, for example, provide an ultra-slim finger print sensor having a thickness of 500 μm or less that does not include a separate printed circuit board (PCB), and a method for manufacturing thereof.

A semiconductor package including: a plurality of lower pads; an upper pad; a semiconductor chip including a chip pad and configured to transmit or receive a first signal through the chip pad; a first wiring structure connecting the chip pad to a first lower pad among the plurality of lower pads; and a second wiring structure connecting a second lower pad among the plurality of lower pads to the upper pad, wherein the first lower pad and the second lower pad are separated from each other by a minimum distance between the plurality of lower pads.