A package structure including a bottom die, a first die, a second die, an encapsulant and a first dummy structure is provided. The first die and a second die are bonded to a first side of the bottom die. The encapsulant laterally encapsulates the first die and the second die. The first dummy structure is bonded to the first side of the bottom die, wherein a sidewall of the first dummy structure is coplanar with a first sidewall of the bottom die.

In an embodiment, a package structure including an electro-optical circuit board, a fanout package disposed over the electro-optical circuit board is provided. The electro-optical circuit board includes an optical waveguide. The fanout package includes a first optical input/output portion, a second optical input/output portion and a plurality of electrical input/output terminals electrically connected to the electro-optical circuit board. The first optical input/output portion is optically coupled to the second optical input/output portion through the optical waveguide of the electro-optical circuit board.

A semiconductor package includes: a package substrate; a first re-distribution layer disposed on the package substrate; a second re-distribution layer disposed between the package substrate and the first re-distribution layer; a connection substrate interposed between the first re-distribution layer and the second re-distribution layer, wherein a connection hole penetrates the connection substrate; a first semiconductor chip mounted on a first surface of the first re-distribution layer; a first connection chip mounted on a second surface, opposite to the first surface, of the first re-distribution layer and disposed in the connection hole; a second connection chip mounted on a first surface of the second re-distribution layer and disposed in the connection hole; and a first lower semiconductor chip mounted on a second surface, opposite to the first surface, of the second re-distribution layer.

A semiconductor package includes: a package substrate; a first re-distribution layer disposed on the package substrate; a second re-distribution layer disposed between the package substrate and the first re-distribution layer; a connection substrate interposed between the first re-distribution layer and the second re-distribution layer, wherein a connection hole penetrates the connection substrate; a first semiconductor chip mounted on a first surface of the first re-distribution layer; a first connection chip mounted on a second surface, opposite to the first surface, of the first re-distribution layer and disposed in the connection hole; a second connection chip mounted on a first surface of the second re-distribution layer and disposed in the connection hole; and a first lower semiconductor chip mounted on a second surface, opposite to the first surface, of the second re-distribution layer.

Hydrophobic, tough, photoimageable, functionalized polyimide formulations have been discovered that can be UV cured and developed in cyclopentanone. The present invention formulations can be used as passivation and redistribution layers with patterning provided by photolithograph, for the redistribution of I/O pads on fan-out RDL applications. The curable polyimide formulations reduce stress on thin wafers, when compared to conventional polyimide formulations, and provide low modulus, hydrophobic solder mask. These materials can serve as protective layers in any applications in which a thin, flexible, and hydrophobic polymer is required, that also has high tensile strength and high elongation at break.

Described herein is a method of forming wafer-level packages from a wafer. The method includes adhesively attaching front sides of first integrated circuits within the wafer to back sides of second integrated circuits such that pads on the front sides of the first integrated circuits and pads on front sides of the second integrated circuits are exposed. The method further includes forming a laser direct structuring (LDS) activatable layer over the front sides of the first integrated circuits and the second integrated circuits and over edges of the second integrated circuits, and forming desired patterns of structured areas within the LDS activatable layer. The method additionally includes metallizing the desired patterns of structured areas to form conductive areas within the LDS activatable layer.

An integrated circuit package can contain a semiconductor die and provide electrical connections between the semiconductor die and additional electronic components. The integrated circuit package can reduce stress placed on the semiconductor die due to movement of the integrated circuit package due to, for example, temperature changes and/or moisture levels. The integrated circuit package can at least partially mechanically isolate the semiconductor die from the integrated circuit package.

An integrated circuit package can contain a semiconductor die and provide electrical connections between the semiconductor die and additional electronic components. The integrated circuit package can reduce stress placed on the semiconductor die due to movement of the integrated circuit package due to, for example, temperature changes and/or moisture levels. The integrated circuit package can at least partially mechanically isolate the semiconductor die from the integrated circuit package.

A semiconductor package device includes a first semiconductor package, a second semiconductor package, and first connection terminals between the first and second semiconductor packages. The first semiconductor package includes a lower redistribution substrate, a semiconductor chip, and an upper redistribution substrate vertically spaced apart from the lower redistribution substrate across the semiconductor chip. The upper redistribution substrate includes a dielectric layer, redistribution patterns vertically stacked in the dielectric layer and each including line and via parts, and bonding pads on uppermost redistribution patterns. The bonding pads are exposed from the dielectric layer and in contact with the first connection terminals. A diameter of each bonding pad decreases in a first direction from a central portion at a top surface of the upper redistribution substrate to an outer portion at the top surface thereof. A thickness of each bonding pad increases in the first direction.

A method comprises: providing a layer of curable adhesive material (4) on a substrate (2); forming a pattern of microstructures (321) on the layer of curable adhesive material (4); curing a first region (42) of the layer of curable adhesive material (4) at a first level and a second region (44) of the layer of curable adhesive material (4) at a second level greater than the first level; providing a solid circuit die (6) to directly attach to a major surface of the first region (42) of the layer of curable adhesive material (4); and further curing the first region (42) of the layer of curable adhesive material (4) to anchor the solid circuit die (6) on the first region (42) by forming an adhesive bond therebetween. The pattern of microstructures (321) may include one or more microchannels (321), the method further comprising forming one or more electrically conductive traces in the microchannels (321), in particular, by flow of a conductive particle containing liquid (8) by a capillary force and, optionally, under pressure. The at least one microchannel (321) may extend from the second region (44) to the first region (42) and have a portion beneath the solid circuit die (6). The solid circuit die (6) may have at least one edge disposed within a periphery of the first region (42) with a gap therebetween. The solid circuit die (6) may have at least one contact pad (72) on a bottom surface thereof, wherein the at least one contact pad (72) may be in direct contact with at least one of the electrically conductive traces in the microchannels (321). Forming the pattern of microstructures (321) may comprise contacting a major surface of a stamp (3) to the layer of curable adhesive material (4), the major surface having a pattern of raised features (32) thereon. The curable adhesive material (4) may be cured by an actinic light source such as an ultraviolet (UV) light source (7, 7′), wherein a mask may be provided to at least partially block the first region (42) of the layer of curable adhesive material (4) from the cure. The stamp (3) may be positioned in contact with the curable adhesive material (4) to replicate the pattern of raised features (32) to form the microstructures (321) while the curable adhesive material (4) is selectively cured by the actinic light source such as the ultraviolet (UV) light source (7). The first region (42) of the layer of curab