A semiconductor chip is mounted on a die pad via a solder material. The semiconductor chip includes a plurality of corners including a first corner. A recess portion is formed in the die pad at an upper surface of the die pad. The semiconductor chip is mounted on the die pad such that the first corner is located at an inside of the recess portion. The first corner is located farthest from a center of a sealing body, among the plurality of corners. The solder material has: a first portion that is located between the semiconductor chip and a bottom surface of the recess portion; and a second portion that is located between the semiconductor chip and the upper surface of the die pad. A thickness of the solder material in the first portion is greater than a thickness of the solder material in the second portion.

A fan-out package includes at least one semiconductor die attached to an interposer structure. a molding compound die frame laterally surrounding the at least one semiconductor die and including a molding compound material, and at least one stress buffer structure located on the interposer structure and including a stress buffer material having a first Young's modulus. The molding compound die frame includes a molding compound material having a second Young's modulus that is greater than the first Young's modulus.

A semiconductor device includes a conductive plate having a main surface, a semiconductor chip arranged to be opposed to the main surface of the conductive plate, a sintered bonding layer arranged between the conductive plate and the semiconductor chip, a sealing resin provided to seal the semiconductor chip and the sintered bonding layer, and a primer layer arranged between the sintered bonding layer and the sealing resin, wherein a first outer edge of a bonding interface between the sintered bonding layer and the conductive plate is located on the inside of an outer circumference of the semiconductor chip and is located on the inside of a second outer edge of a bonding interface between the sintered bonding layer and the semiconductor chip.

In some embodiments, the present disclosure relates to an integrated chip including a substrate and a first die disposed over the substrate. A first plurality of die stopper bumps are disposed along a backside of the first die. The first plurality of die stopper bumps directly contact the backside of the first die, and the first plurality of die stopper bumps are arranged as a plurality of groups of die stopper bumps. A plurality of adhesive structures are also present. Each of the plurality of adhesive structures surrounds a corresponding group of the plurality of groups of die stopper bumps.

A fan-out package includes at least one semiconductor die attached to an interposer structure, a molding compound die frame laterally surrounding the at least one semiconductor die and including a molding compound material, and at least one stress buffer structure located on the interposer structure and including a stress buffer material having a first Young's modulus. The molding compound die frame includes a molding compound material having a second Young's modulus that is greater than the first Young's modulus.

A package includes a package substrate, the package substrate having a first side and a second side opposite to the first side, a package component bonded to the first side of the package substrate, a front-side warpage control structure attached to the first side of the package substrate, and a backside warpage control structure embedded in the package substrate from the second side of the package substrate. The front-side warpage control structure includes a first disconnected structure and a second disconnected structure laterally separated from each other by a gap. The backside warpage control structure includes a third disconnected structure and a fourth disconnected structure laterally separated from each other.

A package includes a package substrate, the package substrate having a first side and a second side opposite to the first side, a package component bonded to the first side of the package substrate, a front-side warpage control structure attached to the first side of the package substrate, and a backside warpage control structure embedded in the package substrate from the second side of the package substrate. The front-side warpage control structure includes a first disconnected structure and a second disconnected structure laterally separated from each other by a gap. The backside warpage control structure includes a third disconnected structure and a fourth disconnected structure laterally separated from each other.