An anisotropic conductive film (ACF) is formed with an ordered array of discrete regions that include a conductive carbon-based material. The discrete regions, which may be formed at small pitch, are embedded in at least one adhesive dielectric material. The ACF may be used to mechanically and electrically interconnect conductive elements of initially-separate semiconductor dice in semiconductor device assemblies. Methods of forming the ACF include forming a precursor structure with the conductive carbon-based material and then joining the precursor structure to a separately-formed structure that includes adhesive dielectric material to be included in the ACF. Sacrificial materials of the precursor structure may be removed and additional adhesive dielectric material formed to embed the discrete regions with the conductive carbon-based material in the adhesive dielectric material of the ACF.

The present disclosure relates to a method for manufacturing a semiconductor package including vacuum-laminating a non-conductive film on a substrate on which a plurality of through silicon vias are provided and bump electrodes are formed, and then performing UV irradiation, wherein an increase in melt viscosity before and after UV irradiation can be adjusted to 30% or less, whereby a bonding can be performed without voids during thermo-compression bonding, and resin-insertion phenomenon between solders can be prevented, fillets can be minimized and reliability can be improved.

Provided are a film-like adhesive that can prevent the back surface of a semiconductor chip, the front surface of a substrate, or the front surface of a heat sink from being partially fractured by a filler; and a method for producing a semiconductor package using the film-like adhesive. The film-like adhesive includes an epoxy resin (A), an epoxy resin curing agent (B), a phenoxy resin (C), and a heat-conductive filler material (D), in which the heat-conductive filler (D) has an average particle size of 0.1 to 10.0 μm, a compression ratio at break in a microcompression test of 5 to 50% of the average particle size of the sample, a fracture strength in a microcompression test of 0.01 to 2.0 GPa, and a thermal conductivity of 30 W/m.Math.K or higher, the content of component (D) is 10 to 70 vol % with respect to the total amount of the components (A) to (D), and the thermal conductivity after thermal curing is 1.0 W/m.Math.K or higher.

Anisotropic conductive film produced that a light-transmitting transfer die having openings with conductive particles disposed therein is prepared, and photopolymerizable insulating resin squeezed into openings to transfer conductive particles onto the surface of the photopolymerizable insulating resin layer, first connection layer is formed which has a structure in which conductive particles are arranged in a single layer in a plane direction of photopolymerizable insulating resin layer and the thickness of photopolymerizable insulating resin layer in central regions between adjacent ones of the conductive particles is smaller than thickness of photopolymerizable insulating resin layer in regions in proximity to conductive particles; first connection layer is irradiated with ultraviolet rays through light-transmitting transfer die; release film is removed from first connection layer; second connection layer is formed on the surface of first connection layer opposite to light-transmitting transfer die; and third connection layer is formed on the surface of first connection layer.

Provided is an anisotropic conductive film manufacturing method capable of reducing manufacturing costs. Also provided is an anisotropic conductive film capable of suppressing the occurrence of conduction defects. The anisotropic conductive film manufacturing method includes: a holding step of supplying conductive particles having a plurality of particle diameters on a member having a plurality of opening parts, and holding the conductive particles in the opening parts; and a transfer step of transferring the conductive particles held in the opening parts to an adhesive film. In the particle diameter distribution graph (X-axis: particle diameter (μm), Y-axis: number of particles) of the conductive particles held in the opening parts, the shape of the graph is such that the slope is substantially infinite in a range at or above a maximum peak particle diameter.

An anisotropic conductive film in which conductive particles are disposed in an insulating resin layer has a particle disposition of the conductive particles such that a first orthorhombic lattice region being formed by arranging a plurality of arrangement axes of the conductive particles, disposed in an a direction at a predetermined pitch, in a b direction inclined with respect to the a direction at an angle, and a second orthorhombic lattice region being formed by arranging a plurality of arrangement axes of the conductive particles, disposed in the a direction at a predetermined pitch, in a c direction obtained by inverting the b direction with respect to the a direction are repeatedly disposed. Regardless of the shape of the terminal arrangements and the materials of electronic components, a good conduction state is ensured while the respective terminals hold conductive particles. Further, the occurrence of a short circuit is prevented.

A method for manufacturing connection structure, the method includes arranging conductive particles and a first composite on a first electrode located on a first surface of a first member, arranging a second composite on the first electrode and a region other than the first electrode of the first surface, arranging the first surface and a second surface of a second member where a second electrode is located, so that the first electrode and the second electrode are opposed to each other, pressing the first member and the second member, and curing the first composite and the second composite.

A sintering powder comprising: a first type of metal particles having a mean longest dimension of from 100 nm to 50 μm.

A method for sawing a semiconductor wafer is provided. The method includes sawing the semiconductor wafer with a first dicing blade to form a first opening. The semiconductor wafer includes a dicing tape and a substrate attached to the dicing tape. The first opening is formed in the upper portion of the substrate. The method also includes sawing the semiconductor wafer with a second dicing blade from the first opening to form a second opening under the first opening and in the middle portion of the substrate. The method further includes sawing the semiconductor wafer with a third dicing blade from the second opening to form a third opening under the second opening and penetrating the lower portion of the substrate, so that the semiconductor wafer is divided into two dies. The first dicing blade, the second dicing blade, and the third dicing blade have different widths.

A bond tip for thermocompression bonding a bottom surface includes a die contact area and a low surface energy material covering at least a portion of the bottom surface. The low surface energy material may cover substantially all of the bottom surface, or only a peripheral portion surrounding the die contact area. The die contact area may be recessed with respect to the peripheral portion a depth at least as great as a thickness of a semiconductor die to be received in the recessed die contact area. A method of thermocompression bonding is also disclosed.