H01L2224/27005

METHOD FOR PROCESSING A WAFER AND WAFER STRUCTURE

A method for processing a wafer in accordance with various embodiments may include: removing wafer material from an inner portion of the wafer to form a structure at an edge region of the wafer to at least partially surround the inner portion of the wafer, and printing material into the inner portion of the wafer using the structure as a printing mask. A method for processing a wafer in accordance with various embodiments may include: providing a carrier and a wafer, the wafer having a first side and a second side opposite the first side, the first side of the wafer being attached to the carrier, the second side having a structure at an edge region of the wafer, the structure at least partially surrounding an inner portion of the wafer; and printing material onto at least a portion of the second side of the wafer.

Method for producing a material-bonding connection between a semiconductor chip and a metal layer

A method for producing a material-bonding connection between a semiconductor chip and a metal layer is disclosed. For this purpose, a semiconductor chip, a metal layer, which has a chip mounting portion, and also a bonding medium containing a metal powder are provided. The metal powder is sintered in a sintering process. In this case, throughout a prescribed sintering time, the prescribed requirements are met, that the bonding medium is arranged between the semiconductor chip and the metal layer and extends right through from the semiconductor chip to the metal layer, that the semiconductor chip and the metal layer are pressed against one another in a pressing-pressure range that lies above a minimum pressing pressure, that the bonding medium is kept in a temperature range that lies above a minimum temperature and that a sound signal is introduced into the bonding medium.

Method for processing a wafer and wafer structure

A method for processing a wafer in accordance with various embodiments may include: removing wafer material from an inner portion of the wafer to form a structure at an edge region of the wafer to at least partially surround the inner portion of the wafer, and printing material into the inner portion of the wafer using the structure as a printing mask. A method for processing a wafer in accordance with various embodiments may include: providing a carrier and a wafer, the wafer having a first side and a second side opposite the first side, the first side of the wafer being attached to the carrier, the second side having a structure at an edge region of the wafer, the structure at least partially surrounding an inner portion of the wafer; and printing material onto at least a portion of the second side of the wafer.

Thermally-enhanced provision of underfill to electronic devices using a stencil

A method of feeding underfill material to fill a space between a semiconductor die and a substrate onto which the semiconductor die has been bonded, the method comprises positioning a stencil over the semiconductor die. The stencil has an elongated slot extending adjacent to an edge of the semiconductor die. Underfill material is printed through the slot such that the underfill material falls through the slot onto the substrate next to the edge of the semiconductor die. Thereafter, the underfill material is heated such that the underfill material flows across the space between the semiconductor die and the substrate from the edge of the semiconductor die to an opposite edge thereof through capillary action.

Substrates with spacers, including substrates with solder resist spacers, and associated devices, systems, and methods

Substrates with spacers, including substrates with solder resist spacers, and associated devices, systems, and methods are disclosed herein. In one embodiment, a substrate comprises a first surface, a solder resist layer disposed over at least a portion of the first surface, and a plurality of electrical contacts at the first surface of the substrate. Electrical contacts of the plurality are configured to be coupled to corresponding electrical contacts at a surface of an electronic device. The substrate further includes a solder resist spacer disposed on the solder resist layer. The solder resist spacer can have a height corresponding to a thickness of the electronic device. The solder resist spacer can be configured as a dam to limit bleed out of underfill laterally away from the plurality of electrical contacts along the first surface and toward the solder resist spacer.

SEMICONDUCTOR MANUFACTURING SYSTEM AND METHOD

There may be provided a system that includes a workpiece-support assembly with a platform. The system may further include an alignment-detection assembly with an optical sensor oriented towards the platform. The system may further include a handling assembly with at least one manipulator positioned along at least a first movement plane that is substantially parallel with the platform or at least a second movement plane that is substantially perpendicular to the platform. The system may further include a bonding assembly with a dispenser positioned over the platform. The system may further include a fiducial-marking assembly with a drill oriented towards the platform. The system may further include a controller electrically connected to each of the optical sensor, the at least one manipulator, the dispenser, and the drill.