A manufacturing method of a device chip includes a die bonding resin providing step of supplying a die bonding resin in a liquid state to a back surface side of a wafer with device chips formed on a front surface thereof and solidifying the die bonding resin, a water-soluble resin providing step of covering the die bonding resin with a water-soluble resin, a laser processing step of applying a laser beam from the back surface side of the wafer to remove the die bonding resin and the water-soluble resin, an etching step of etching an exposed portion on the back surface side of the wafer to divide the wafer, and a water-soluble resin removing step of supplying water on the back surface side of the wafer to remove the water-soluble resin.

The acrylic composition for sealing contains an acrylic compound, a polyphenylene ether resin including a radical-polymerizable substituent at a terminal, an inorganic filler, and a thermal radical polymerization initiator.

A semiconductor device and method of manufacturing is provided, whereby a support structure is utilized to provide additional support for a conductive element in order to eliminate or reduce the formation of a defective surface such that the conductive element may be formed to have a thinner structure without suffering deleterious structures.

A semiconductor device and method of manufacturing is provided, whereby a support structure is utilized to provide additional support for a conductive element in order to eliminate or reduce the formation of a defective surface such that the conductive element may be formed to have a thinner structure without suffering deleterious structures.

In accordance with an embodiment of the present invention, a method of forming a semiconductor device includes forming a contact layer over a first major surface of a substrate. The substrate includes device regions separated by kerf regions. The contact layer is disposed in the kerf region and the device regions. A structured solder layer is formed over the device regions. The contact layer is exposed at the kerf region after forming the structured solder layer. The contact layer and the substrate in the kerf regions are diced.

The present invention includes: preparing a semiconductor substrate having a first main surface and a second main surface that is located on an opposite side of the first main surface; forming a first electrode on the first main surface; forming a solder-bonding metal film (a first solder-bonding metal film) on the first electrode; forming a sacrificial film on the first solder-bonding metal film; grinding the second main surface after forming the sacrificial film; performing heat treatment after the grinding (forming an element structure on the third main surface side); removing the sacrificial film after the performing heat treatment; and solder-bonding the first solder-bonding metal film and a first external electrode.

According to various embodiments, a wafer arrangement may be provided, the wafer arrangement may include: a wafer including at least one electronic component having at least one electronic contact exposed on a surface of the wafer; an adhesive layer structure disposed over the surface of the wafer, the adhesive layer structure covering the at least one electronic contact; and a carrier adhered to the wafer via the adhesive layer structure, wherein the carrier may include a contact structure at a surface of the carrier aligned with the at least one electronic contact so that by pressing the wafer in direction of the carrier, the contact structure can be brought into electrical contact with the at least one electronic contact of the at least one electronic component.

A semiconductor device and method of manufacturing is provided, whereby a support structure is utilized to provide additional support for a conductive element in order to eliminate or reduce the formation of a defective surface such that the conductive element may be formed to have a thinner structure without suffering deleterious structures.

The present invention includes: preparing a semiconductor substrate having a first main surface and a second main surface that is located on an opposite side of the first main surface; forming a first electrode on the first main surface; forming a solder-bonding metal film (a first solder-bonding metal film) on the first electrode; forming a sacrificial film on the first solder-bonding metal film; grinding the second main surface after forming the sacrificial film; performing heat treatment after the grinding (forming an element structure on the third main surface side); removing the sacrificial film after the performing heat treatment; and solder-bonding the first solder-bonding metal film and a first external electrode.

In accordance with some embodiments a via is formed over a semiconductor device, wherein the semiconductor device is encapsulated within an encapsulant 129. A metallization layer and a second via are formed over and in electrical connection with the first via, and the metallization layer and the second via are formed using the same seed layer. Embodiments include fully landed vias, partially landed vias in contact with the seed layer, and partially landed vias not in contact with the seed layer.