Patent classifications
H01L2224/27013
Semiconductor packages having an electric device with a recess
Embodiments are directed to a package that includes an electric device having a recess. In one embodiment, the electric device is a sensor and the recess reduces signal drift of the sensor caused by thermal expansion of the package. In another embodiment, the recess is substantially filled with adhesive material, thus increasing adhesion between the electric device and a substrate of the package while at the same time allowing for lower adhesive fillets.
Semiconductor device
A semiconductor device includes: an insulating substrate; an aluminum pattern made of a pure aluminum or alloy aluminum material and formed on the insulating substrate; a plating formed on a surface of the aluminum pattern; and a semiconductor element joined to the plating, wherein a thickness of the plating is 10 m or more.
Semiconductor Device and Method of Forming Underfill Dam for Chip-to-Wafer Device
A semiconductor device has a semiconductor die with a sensitive area. A dam wall is formed over the semiconductor die proximate to the sensitive area. In one embodiment, the dam wall has a vertical segment and side wings. The dam wall can have a plurality of rounded segments integrated with a plurality of vertical segments as a unitary body. Alternatively, the dam wall has a plurality of separate vertical segments arranged in two or more overlapping rows. A plurality of conductive posts is formed over the semiconductor die. An electrical component is disposed over the semiconductor die. The semiconductor die and electrical component are disposed over a substrate. An insulating layer is formed over the substrate outside the dam wall. An underfill material is deposited between the semiconductor die and substrate. The dam wall and insulating layer inhibit the underfill material from contacting any portion of the sensitive area.
Modified leadframe design with adhesive overflow recesses
The present disclosure is directed to a leadframe having a recess in a body of the leadframe to collect glue overflowing from the manufacturing process of coupling a semiconductor die to the leadframe. The recess extends beneath an edge of the semiconductor die so that any tendency of the glue to adhere to the semiconductor die is counteracted by a tendency of the glue to adhere to a wall of the recess and at least partially fill the volume of the recess. In addition, the recess for collecting adhesive may also form a mold lock on an edge of the leadframe, the mold lock providing a more durable connection between the leadframe and an encapsulant during physical and temperature stresses.
SEMICONDUCTOR DEVICE, POWER CONVERTER, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
An object is to provide a technique for reducing process steps, and a stress generated at the peripheral portion of the joint portion between an electrode of a semiconductor element and a lead frame. A semiconductor device includes the following: a semiconductor element disposed on a heat spreader; a lead frame joined to an emitter electrode of the semiconductor element via solder, which is a joining material; a metal film disposed on a surface of the emitter electrode; and an anti-oxidation film disposed on a surface of the metal film. The metal film has a peripheral portion that is entirely exposed from the anti-oxidation film.
Integrated circuit (IC) package with a solder receiving area and associated methods
A single chip integrated circuit (IC) package includes a die pad, and a spacer ring on the die pad defining a solder receiving area. A solder body is on the die pad within the solder receiving area. An IC die is on the spacer ring and is secured to the die pad by the solder body within the solder receiving area. Encapsulating material surrounds the die pad, spacer ring, and IC die. For a multi-chip IC package, a dam structure is on the die pad and defines multiple solder receiving areas. A respective solder body is on the die pad within a respective solder receiving area. An IC die is within each respective solder receiving area and is held in place by a corresponding solder body. Encapsulating material surrounds the die pad, dam structure, and plurality of IC die.
PRINTED CIRCUIT BOARD AND MANUFACTURING METHOD THEREOF
Provided is a printed circuit board using thermally and electrically conductive layer, and a manufacturing method thereof. The manufacturing method for mounting a plurality of elements includes forming an electrode layer on a substrate of a PCB, forming a photo solder resist (PSR) layer in a patterned manner on a first area of the electrode layer; forming a conductive layer on the PSR layer in the patterned manner, the conductive layer being configured to conduct heat and static electricity; and mounting a plurality of elements on a second area of the side of the PCB, the second area being different from the first area.
Light source module and backlight assembly having the same
A light source module according to some example embodiments includes a first substrate and a plurality of second substrates. The first substrate includes a plurality of connectors configured to at least receive a supply of electrical power and a plurality of first connection pads that are configured to be electrically connected to the plurality of connectors. The second substrates each include a plurality of mounting elements on an upper surface and a plurality of second connection pads on a lower surface of the second substrate and configured to be electrically connected to the plurality of mounting elements. Each mounting element may be connected to a separate light-emitting device. A plurality of connection members may electrically connect the first connection pads of the first substrate to the plurality of second connection pads of the plurality of second substrates.
Package with underfill containment barrier
An apparatus is provided which comprises: a substrate, a die site on the substrate to couple with a die, a die side component site on the substrate to couple with a die side component, and a raised barrier on the substrate between the die and die side component sites to contain underfill material disposed at the die site, wherein the raised barrier comprises electroplated metal. Other embodiments are also disclosed and claimed.
Semiconductor packaging substrate fine pitch metal bump and reinforcement structures
Semiconductor packaging substrates and processing sequences are described. In an embodiment, a packaging substrate includes a build-up structure, and a patterned metal contact layer partially embedded within the build-up structure and protruding from the build-up structure. The patterned metal contact layer may include an array of surface mount (SMT) metal bumps in a chip mount area, a metal dam structure or combination thereof.