A method for the production of a silver sintering agent in the form of a layer-shaped silver sintering body having silver oxide surfaces and the use thereof are provided.

A microelectronic assembly including an insulating layer having a plurality of nanoscale conductors disposed in a nanoscale pitch array therein and a pair of microelectronic elements is provided. The nanoscale conductors can form electrical interconnections between contacts of the microelectronic elements while the insulating layer can mechanically couple the microelectronic elements together.

A bonding film for bonding a semiconductor element and a substrate. The bonding film has an electroconductive bonding layer formed by molding an electroconductive paste including metal fine particles (P) into a film form, and a tack layer having tackiness and laminated on the electroconductive bonding layer. The tack layer includes 0.1% to 1.0% by mass of metal fine particles (M) with respect to the metal fine particles (P) in the electroconductive bonding layer, and the metal fine particles (M) have a melting point of 250° C. or lower.

An anisotropic conductive film (ACF) is formed with an ordered array of discrete regions that include a conductive carbon-based material. The discrete regions, which may be formed at small pitch, are embedded in at least one adhesive dielectric material. The ACF may be used to mechanically and electrically interconnect conductive elements of initially-separate semiconductor dice in semiconductor device assemblies. Methods of forming the ACF include forming a precursor structure with the conductive carbon-based material and then joining the precursor structure to a separately-formed structure that includes adhesive dielectric material to be included in the ACF. Sacrificial materials of the precursor structure may be removed and additional adhesive dielectric material formed to embed the discrete regions with the conductive carbon-based material in the adhesive dielectric material of the ACF.

A step-type stacked chip packaging structure based on a resin spacer that includes: a plastic packaging material, a circuit board, a resin spacer, a first chip, a second chip and an electrical connection assembly. The resin spacer, the first chip, and the second chip are stacked on the circuit board respectively. The second chip is stacked on the first chip in a stepped manner. The circuit board, the first chip and the second chip are electrically connected together through the electrical connection assembly. The resin spacer uses a fiber glass fabric as its base material, a weight percent of the fiber glass fabric is 10-60 wt %, and the following components are attached to the fiber glass fabric as a percentage by the total weight of the resin spacer: 8-40 wt % of epoxy resin, 10-30 wt % of quartz powder, 2-10 wt % of aluminum oxide, 1-8 wt % of calcium oxide, and 1-8 wt % of curing agent.

In some aspects, it is disclosed an electrical support for at least one electrical contact pad, including an insulating viscoelastic matrix, and at least one elastically deformable structure made of a conductive material to form an open web, the at least one structure including at least a core part which is embedded within the insulating matrix, and at least one connection part which extends out of the insulating matrix and is configured to be connected to the at least one electrical contact pad, wherein the structure includes a stiffer section corresponding substantially to the core part of the structure and at least one more flexible section corresponding substantially to the at least one connection part of the structure.

There is provided a semiconductor device including: a semiconductor element; a support substrate configured to support the semiconductor element; an intermediate metal layer interposed between the semiconductor element and the support substrate in a thickness direction of the support substrate, wherein the semiconductor element and the intermediate metal layer are bonded by solid phase diffusion bonding; and a first positioning portion including a portion of the semiconductor element and a first portion of the intermediate metal layer and configured to suppress relative movement between the semiconductor element and the intermediate metal layer.

An anisotropic conductive film (ACF) is formed with an ordered array of discrete regions that include a conductive carbon-based material. The discrete regions, which may be formed at small pitch, are embedded in at least one adhesive dielectric material. The ACF may be used to mechanically and electrically interconnect conductive elements of initially-separate semiconductor dice in semiconductor device assemblies. Methods of forming the ACF include forming a precursor structure with the conductive carbon-based material and then joining the precursor structure to a separately-formed structure that includes adhesive dielectric material to be included in the ACF. Sacrificial materials of the precursor structure may be removed and additional adhesive dielectric material formed to embed the discrete regions with the conductive carbon-based material in the adhesive dielectric material of the ACF.

Provided is a method for transferring and bonding devices. The method includes applying an adhesive layer to a carrier, arranging a plurality of devices, attaching the arranged devices to the carrier, applying a polymer film to a substrate, aligning the carrier to which the plurality of devices are attached with the substrate, bonding the plurality of devices to the substrate by radiating laser, and releasing the carrier from the substrate to which the plurality of devices are bonded.

The present disclosure relates to a method for manufacturing a semiconductor package including vacuum-laminating a non-conductive film on a substrate on which a plurality of through silicon vias are provided and bump electrodes are formed, and then performing UV irradiation, wherein an increase in melt viscosity before and after UV irradiation can be adjusted to 30% or less, whereby a bonding can be performed without voids during thermo-compression bonding, and resin-insertion phenomenon between solders can be prevented, fillets can be minimized and reliability can be improved.