Since the solder 106 temporarily remaining in the first region 301 is in a state of being high in curvature, it is in point contact with the semiconductor element 105 at the vertex of the solder 106. Thereafter, the solder 106 is gradually wetted and spread from the center part to the peripheral part and from the first region 301 to the second region 302 while the semiconductor element 105 is pressed against the solder 106. At this time, since the solder 106 wets and spreads while discharging air, generation of voids can be suppressed.

Since the solder 106 temporarily remaining in the first region 301 is in a state of being high in curvature, it is in point contact with the semiconductor element 105 at the vertex of the solder 106. Thereafter, the solder 106 is gradually wetted and spread from the center part to the peripheral part and from the first region 301 to the second region 302 while the semiconductor element 105 is pressed against the solder 106. At this time, since the solder 106 wets and spreads while discharging air, generation of voids can be suppressed.

A semiconductor chip package is provided with improved connections between different components within the package. The semiconductor chip package may comprise a semiconductor chip disposed on a substrate. The semiconductor chip may have a first surface and a second surface. The first surface of the semiconductor chip may be connected to the substrate. The semiconductor chip package may comprise a leadframe that includes a first lead and a second lead. The first lead of the leadframe may be directly attached to the second surface of the semiconductor chip. The second lead of the leadframe may be directly attached to the substrate.

A semiconductor chip package is provided with improved connections between different components within the package. The semiconductor chip package may comprise a semiconductor chip disposed on a substrate. The semiconductor chip may have a first surface and a second surface. The first surface of the semiconductor chip may be connected to the substrate. The semiconductor chip package may comprise a leadframe that includes a first lead and a second lead. The first lead of the leadframe may be directly attached to the second surface of the semiconductor chip. The second lead of the leadframe may be directly attached to the substrate.

An applying method includes the following steps. Firstly, a conductive adhesive including a plurality of conductive particles and an insulating binder is provided. Then, a carrier plate is provided. Then, a patterned adhesive is formed on the carrier plate by the conductive adhesive, wherein the patterned adhesive includes a first transferring portion. Then, a manufacturing device including a needle is provided. Then, the needle of the manufacturing device is moved to contact the first transferring portion. Then, the transferring portion is transferred to a board by the manufacturing device.

An applying method includes the following steps. Firstly, a conductive adhesive including a plurality of conductive particles and an insulating binder is provided. Then, a carrier plate is provided. Then, a patterned adhesive is formed on the carrier plate by the conductive adhesive, wherein the patterned adhesive includes a first transferring portion. Then, a manufacturing device including a needle is provided. Then, the needle of the manufacturing device is moved to contact the first transferring portion. Then, the transferring portion is transferred to a board by the manufacturing device.

A method of fabricating a semiconductor device is disclosed. In one aspect, the method includes placing a first semiconductor chip on a carrier with the first main surface of the first semiconductor chip facing the carrier. A first layer of soft solder material is provided between the first main surface and the carrier. Heat is applied during placing so that a temperature at the first layer of soft solder material is equal to or higher than a melting temperature of the first layer of soft solder material. A second layer of soft solder material is provided between the first contact area and the second main surface. Heat is applied during placing so that a temperature at the second layer of soft solder material is equal to or higher than a melting temperature of the second layer of soft solder material. The first and second layers of soft solder material are cooled to solidify the soft solder materials.

A method of fabricating a semiconductor device is disclosed. In one aspect, the method includes placing a first semiconductor chip on a carrier with the first main surface of the first semiconductor chip facing the carrier. A first layer of soft solder material is provided between the first main surface and the carrier. Heat is applied during placing so that a temperature at the first layer of soft solder material is equal to or higher than a melting temperature of the first layer of soft solder material. A second layer of soft solder material is provided between the first contact area and the second main surface. Heat is applied during placing so that a temperature at the second layer of soft solder material is equal to or higher than a melting temperature of the second layer of soft solder material. The first and second layers of soft solder material are cooled to solidify the soft solder materials.

Contact bumps between a contact pad and a substrate can include a rough surface that can mate with the material of the substrate of which may be flexible. The rough surface can enhance the bonding strength of the contacts, for example, against shear and tension forces, especially for flexible systems such as smart label and may be formed via roller or other methods.

Contact bumps between a contact pad and a substrate can include a rough surface that can mate with the material of the substrate of which may be flexible. The rough surface can enhance the bonding strength of the contacts, for example, against shear and tension forces, especially for flexible systems such as smart label and may be formed via roller or other methods.