The present invention relates to a bonding method for connecting a first wafer and a second wafer, wherein firstly a first adhesive layer is deposited onto a surface of the first wafer. Furthermore, a second adhesive layer is deposited onto the first adhesive layer, and the two adhesive layers are structured by way of selective removal of both adhesive layers in at least one predefined region of the first wafer, Moreover, the first wafer is connected to the second wafer by way of pressing a surface of the second wafer onto the second adhesive layer, wherein the second adhesive layer is more flowable that the first adhesive layer on connecting the first wafer to the second wafer.

The present invention relates to a bonding method for connecting a first wafer and a second wafer, wherein firstly a first adhesive layer is deposited onto a surface of the first wafer. Furthermore, a second adhesive layer is deposited onto the first adhesive layer, and the two adhesive layers are structured by way of selective removal of both adhesive layers in at least one predefined region of the first wafer, Moreover, the first wafer is connected to the second wafer by way of pressing a surface of the second wafer onto the second adhesive layer, wherein the second adhesive layer is more flowable that the first adhesive layer on connecting the first wafer to the second wafer.

An apparatus includes a polymer base layer having a surface. A die that includes a fluid manipulation surface that is substantially coplanar with the surface of the polymer base layer. The die includes a control electrode to generate an electric field to perform microfluidic manipulation of fluid across the fluid manipulation surface of the die.

An apparatus includes a polymer base layer having a surface. A die that includes a fluid manipulation surface that is substantially coplanar with the surface of the polymer base layer. The die includes a control electrode to generate an electric field to perform microfluidic manipulation of fluid across the fluid manipulation surface of the die.

A method of determining a physical characteristic of an adhesive material on a semiconductor device element using structured light is provided. The method includes the steps of: (1) applying a structured light pattern to an adhesive material on a semiconductor device element; (2) creating an image of the structured light pattern using a camera; and (3) analyzing the image of the structured light pattern to determine a physical characteristic of the adhesive material. Additional methods and systems for determining physical characteristics of semiconductor devices and elements using structured light are also provided.

A die attachment structure can include: a base; a die located above a first surface of the base; a first adhesive layer located on a back surface of the die, wherein the die is pasted on the first surface of the base at least by the first adhesive layer; and a second adhesive layer at least partially covering the sidewalls of the die.

A die attachment structure can include: a base; a die located above a first surface of the base; a first adhesive layer located on a back surface of the die, wherein the die is pasted on the first surface of the base at least by the first adhesive layer; and a second adhesive layer at least partially covering the sidewalls of the die.

The invention is directed towards enhanced systems and methods for employing a pulsed photon (or EM energy) source, such as but not limited to a laser, to electrically couple, bond, and/or affix the electrical contacts of a semiconductor device to the electrical contacts of another semiconductor devices. Full or partial rows of LEDs are electrically coupled, bonded, and/or affixed to a backplane of a display device. The LEDs may be μLEDs. The pulsed photon source is employed to irradiate the LEDs with scanning photon pulses. The EM radiation is absorbed by either the surfaces, bulk, substrate, the electrical contacts of the LED, and/or electrical contacts of the backplane to generate thermal energy that induces the bonding between the electrical contacts of the LEDs' electrical contacts and backplane's electrical contacts. The temporal and spatial profiles of the photon pulses, as well as a pulsing frequency and a scanning frequency of the photon source, are selected to control for adverse thermal effects.

The invention is directed towards enhanced systems and methods for employing a pulsed photon (or EM energy) source, such as but not limited to a laser, to electrically couple, bond, and/or affix the electrical contacts of a semiconductor device to the electrical contacts of another semiconductor devices. Full or partial rows of LEDs are electrically coupled, bonded, and/or affixed to a backplane of a display device. The LEDs may be μLEDs. The pulsed photon source is employed to irradiate the LEDs with scanning photon pulses. The EM radiation is absorbed by either the surfaces, bulk, substrate, the electrical contacts of the LED, and/or electrical contacts of the backplane to generate thermal energy that induces the bonding between the electrical contacts of the LEDs' electrical contacts and backplane's electrical contacts. The temporal and spatial profiles of the photon pulses, as well as a pulsing frequency and a scanning frequency of the photon source, are selected to control for adverse thermal effects.

A packaged electronic device includes a stacked configuration of a first semiconductor die in a first recess in a first side of a first conductive plate, a second semiconductor die in a second recess in a first side of a second conductive plate, a third conductive plate electrically coupled to a second side of the second semiconductor die, and a package structure that encloses the first semiconductor die, and the second semiconductor die, where the package structure includes a side that exposes a portion of a second side of the first conductive plate.