Embodiments of the present disclosure are directed towards techniques and configurations for layered interconnect structures for bridge interconnection in integrated circuit assemblies. In one embodiment, an apparatus may include a substrate and a bridge embedded in the substrate. The bridge may be configured to route electrical signals between two dies. An interconnect structure, electrically coupled with the bridge, may include a via structure including a first conductive material, a barrier layer including a second conductive material disposed on the via structure, and a solderable material including a third conductive material disposed on the barrier layer. The first conductive material, the second conductive material, and the third conductive material may have different chemical composition. Other embodiments may be described and/or claimed.

In some examples, a system comprises a set of nanoparticles and a set of nanowires extending from the set of nanoparticles.

A method of manufacturing a semiconductor device is provided. The method includes forming a package leadframe including leads and a die paddle. A cavity is formed in the die paddle. Sidewall and bottom surfaces of the cavity are plated with a solder alloy material. A semiconductor die is attached to the bottom surface of the cavity by way of a thermal cycle. A molding compound encapsulates the semiconductor die, a portion of the leads, and a portion of the die paddle.

A method of manufacturing a semiconductor device is provided. The method includes forming a package leadframe including leads and a die paddle. A cavity is formed in the die paddle. Sidewall and bottom surfaces of the cavity are plated with a solder alloy material. A semiconductor die is attached to the bottom surface of the cavity by way of a thermal cycle. A molding compound encapsulates the semiconductor die, a portion of the leads, and a portion of the die paddle.

A semiconductor die stack includes a base die and core dies stacked over the base die. Each of the base die and the core dies include a semiconductor substrate, a front side passivation layer formed over a front side of the semiconductor substrate, a back side passivation layer over a back side of the semiconductor substrate, a through-via vertically penetrating the semiconductor substrate and the front side passivation layer, and a bump, a support pattern, and a bonding insulating layer formed over the front side passivation layer. Top surfaces of the bump, the support pattern, and the bonding insulating layer are co-planar. The bump is vertically aligned with the through-via. The support pattern is spaced apart from the through-via and the bump. The support pattern includes a plurality of first bars that extend in parallel with each other in a first direction and a plurality of second bars that extend in parallel with each other in a second direction.

A semiconductor device includes a semiconductor die with a metallization layer including a first metal with a comparatively high melting point, a die carrier including a second metal with a comparatively high melting point, a first intermetallic compound arranged between the semiconductor die and the die carrier and including the first metal and a third metal with a comparatively low melting point, a second intermetallic compound arranged between the first intermetallic compound and the die carrier and including the second metal and the third metal, and precipitates of a third intermetallic compound arranged between the first intermetallic compound and the second intermetallic compound and including the third metal and a fourth metal with a comparatively high melting point.

A semiconductor device includes a semiconductor die with a metallization layer including a first metal with a comparatively high melting point, a die carrier including a second metal with a comparatively high melting point, a first intermetallic compound arranged between the semiconductor die and the die carrier and including the first metal and a third metal with a comparatively low melting point, a second intermetallic compound arranged between the first intermetallic compound and the die carrier and including the second metal and the third metal, and precipitates of a third intermetallic compound arranged between the first intermetallic compound and the second intermetallic compound and including the third metal and a fourth metal with a comparatively high melting point.

In some examples, a system comprises a set of nanoparticles and a set of nanowires extending from the set of nanoparticles.

In some examples, a system comprises a first component having a first surface, a first set of nanoparticles coupled to the first surface, and a first set of nanowires extending from the first set of nanoparticles. The system also comprises a second component having a second surface, a second set of nanoparticles coupled to the second surface, and a second set of nanowires extending from the second set of nanoparticles. The system further includes an adhesive positioned between the first and second surfaces. The first and second sets of nanowires are positioned within the adhesive.

Various embodiments of the present application are directed towards a method for forming an integrated chip in which a group III-V device is bonded to a substrate, as well as the resulting integrated chip. In some embodiments, the method includes: forming a chip including an epitaxial stack, a metal structure on the epitaxial stack, and a diffusion layer between the metal structure and the epitaxial stack; bonding the chip to a substrate so the metal structure is between the substrate and the epitaxial stack; and performing an etch into the epitaxial stack to form a mesa structure with sidewalls spaced from sidewalls of the diffusion layer. The metal structure may, for example, be a metal bump patterned before the bonding or may, for example, be a metal layer that is on an etch stop layer and that protrudes through the etch stop layer to the diffusion layer.