A power module includes: a plate-shaped thick copper substrate, a conductive stress relaxation metal layer disposed on the thick copper substrate, a semiconductor device disposed on the stress relaxation metal layer, and a plated layer disposed on the stress relaxation metal layer, wherein the semiconductor device is bonded to the stress relaxation metal layer via the plated layer. The thick copper substrate includes a first thick copper layer and a second thick copper layer disposed on the first thick copper layer, and the stress relaxation metal layer is disposed on the second thick copper layer. A part of the semiconductor device is embedded to be fixed to the stress relaxation metal layer. A bonded surface between the semiconductor device and the stress relaxation metal layer are integrated to each other by means of diffusion bonding or solid phase diffusion bonding.

A semiconductor device includes an insulative substrate, a wiring pattern, a bonding portion, and a semiconductor element. The wiring pattern is formed on an upper surface of the insulative substrate. The bonding portion is formed on an upper surface of the wiring pattern. The semiconductor element includes an electrode pad connected to an upper surface of the bonding portion. The bonding portion includes first sintered layers distributed in the bonding portion and a second sintered layer having a density differing from each of the first sintered layers and surrounding the first sintered layer.

A sintered material excellent in thermal stress and bonding strength; a connection structure containing the sintered material; a composition for bonding with which the sintered material can be produced; and a method for producing the sintered material. The sintered material has a base portion, buffer portions, and filling portions. The buffer portions and filling portions are dispersed in the base portion. The base portion is a metal sintered body, each buffer portion is formed from a pore and/or material that is not the same as the sintered body, and each filling portion is formed from particles and/or fibers. The sintered material satisfies A>B. A is the kurtosis of volume distribution of the base portions in a three-dimensional image of the sintered material. B is the kurtosis of volume distribution of the base portions in a three-dimensional image of the sintered material from which the filling portions are removed.

A sintered material excellent in thermal stress and bonding strength; a connection structure containing the sintered material; a composition for bonding with which the sintered material can be produced; and a method for producing the sintered material. The sintered material has a base portion, buffer portions, and filling portions. The buffer portions and filling portions are dispersed in the base portion. The base portion is a metal sintered body, each buffer portion is formed from a pore and/or material that is not the same as the sintered body, and each filling portion is formed from particles and/or fibers. The sintered material satisfies A>B. A is the kurtosis of volume distribution of the base portions in a three-dimensional image of the sintered material. B is the kurtosis of volume distribution of the base portions in a three-dimensional image of the sintered material from which the filling portions are removed.

The invention relates to a method for producing a circuit board element having at least one electronic component, which component has a connection side defined by electrical contacts or a conductive layer and is connected to a temporary carrier for positioning and embedded in an insulating material; the component is attached in a specified position directly to a plastic film as a temporary carrier, whereupon a composite layer having at least a carrier and an electrical conductor, preferably also having an insulating material, is attached on the side of the component opposite the plastic film, with the carrier facing away from the component, and thereafter the plastic film is removed; then the component is embedded in insulating material. After the embedding of the component in the insulating material, an additional composite layer is preferably attached to the component and the embedding of the component on the side opposite the first composite layer.

Molded air cavity packages and methods for producing molded air cavity packages are disclosed. In one embodiment, the molded air cavity package includes a base flange, retention posts integrally formed with the base flange and extending from the flange frontside in a direction opposite the flange backside, and retention tabs having openings through which the retention posts are received. A molded package body is bonded to the base flange and envelopes, at least in substantial part, the retention posts and the retention tabs. The molded air cavity package further includes package leads extending from the molded package body. In certain implementations, the package leads and the retention tabs comprise singulated portions of a leadframe. Additionally or alternatively, the retention posts may be staked or otherwise physically deformed in a manner preventing disengagement of the retention posts from the retention tabs along a centerline of the molded air cavity package.

A carrier and the clip are used to produce a packaging having a lead frame by connection to the chip using sintering of the solidified sintering pastes in one work step. The carrier may be a lead frame and a clip for at least one semiconductor element has at least one functional surface for connecting to the semiconductor element and a plurality of connections. The material of the earlier or of the clip includes a metal and a layer made of a solidified sintering paste. The sintering paste may contain silver and/or a silver compound. The sintering paste is arranged on the functional surface. The carrier or clip and the layer made of sintering paste form an intermediate product that can be connected to the semiconductor element.

A semiconductor module comprises a semiconductor element, a joining part configured including a sintered metal, a substrate member, and a lead frame. The joining part comprises: at least one element joining member that joins the semiconductor element and a main surface of the substrate member; and at least one lead frame joining member that joins the lead frame and the main surface of the substrate part, the at least one lead frame joining member having a small-piece form with the same volume as the element joining member.

A power module assembly has a first substrate including a first layer, second layer and a third layer. The first layer is configured to carry a switch current flowing in a first direction. A second substrate is operatively connected to the first substrate and includes a fourth layer, fifth layer and a sixth layer. A conductive joining layer connects the third layer of the first substrate and the fourth layer of the second substrate. The conductive joining layer may be a first sintered layer. The third layer of the first substrate, the first sintered layer and the fourth layer of the second substrate are configured to function together as a unitary conducting layer carrying the switch current in a second direction substantially opposite to the first direction. The net inductance is reduced by a cancellation effect of the switch current going in opposite directions.

Molded air cavity packages and methods for producing molded air cavity packages are disclosed. In one embodiment, the molded air cavity package includes a molded package body having an upper peripheral edge portion, an air cavity around which the upper peripheral edge portion extends, and a cover piece bonded to the upper peripheral edge portion to enclose the air cavity. The cover piece has a lower peripheral edge portion, which cooperates with the upper peripheral edge portion to define a cover-body interface. The cover-body interface includes an annular channel extending around the cover-body interface, as taken about the package centerline, and first and second hardstop features formed on the upper peripheral edge portion of the molded package body and on the lower peripheral edge portion of the cover piece, respectively. The hardstop features contact to determine a vertical height of the annular channel, as taken along the package centerline.