Patent classifications
H01L2224/27515
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
According to one embodiment, a semiconductor device includes a wiring substrate with a first conductor portion and a second conductor portion on a first surface. A protective film is on the first surface of the wiring substrate. The protective film has a first opening exposing the first conductor portion and a second opening exposing the second conductor portion. A first electronic component is mounted to the wiring substrate. An electrode terminal of the first electronic component is connected to the first conductor portion through the first opening. A second electronic component is stacked on the first electronic component via an adhesive layer. A first resin layer is between the protective film and the first electronic component. A second resin layer is between the protective film and the adhesive layer, the second resin layer being outside the first electronic component in a plan view.
Adhesive member and display device including the same
A display device includes a substrate including a conductive pad, a driving chip facing the substrate and including a conductive bump electrically connected to the conductive pad and an inspection bump which is insulated from the conductive pad, and an adhesive member which is between the conductive pad and the driving chip and connects the conductive pad to the driving chip. The adhesive member includes a first adhesive layer including a conductive ball, and a second adhesive layer facing the first adhesive layer, the second adhesive layer including a first area including a color-changing material, and a second area adjacent to the first area and excluding the color-changing material.
Adhesive member and display device including the same
A display device includes a substrate including a conductive pad, a driving chip facing the substrate and including a conductive bump electrically connected to the conductive pad and an inspection bump which is insulated from the conductive pad, and an adhesive member which is between the conductive pad and the driving chip and connects the conductive pad to the driving chip. The adhesive member includes a first adhesive layer including a conductive ball, and a second adhesive layer facing the first adhesive layer, the second adhesive layer including a first area including a color-changing material, and a second area adjacent to the first area and excluding the color-changing material.
DIE BONDING RESIN LAYER FORMING APPARATUS
A die bonding resin layer forming apparatus includes a liquid resin applying part including a chuck table that holds a wafer in such a manner that the back surface side is exposed and an applying unit that applies a liquid resin to the back surface side of the wafer held by the chuck table, a waiting part that holds the wafer to which the liquid resin has been applied by the liquid resin applying part and waits to dry the liquid resin applied to the wafer while enhancing flatness of the liquid resin, a curing part that gives an external stimulus to the liquid resin dried by the waiting part to cure the liquid resin and form the die bonding resin layer, and a conveying unit that conveys the wafer among the liquid resin applying part, the waiting part, and the curing part.
INKJET ADHESIVE, MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE, AND ELECTRONIC COMPONENT
Provided is an inkjet adhesive which is applied using an inkjet device, wherein the adhesive can suppress generation of voids in the adhesive layer and, after bonding, can enhance adhesiveness, moisture-resistant adhesion reliability, and cooling/heating cycle reliability. An inkjet adhesive according to the present invention comprises a photocurable compound, a photo-radical initiator, a thermosetting compound having one or more cyclic ether groups or cyclic thioether groups, and a compound capable of reacting with the thermosetting compound, and the compound capable of reacting with the thermosetting compound contains aromatic amine.
Compressible foamed thermal interface materials and methods of making the same
Disclosed are exemplary embodiments of compressible foamed thermal interface materials. Also disclosed are methods of making and using compressible foamed thermal interface materials.
Semiconductor device package and a method of manufacturing the same
At least some embodiments of the present disclosure relate to a semiconductor device package. The semiconductor device package includes a first substrate, an electrical component disposed on the first substrate, a second substrate disposed over the electrical component, an adhesive layer, a spacer, and an encapsulation layer. The adhesive layer is disposed between the electrical component and the second substrate. The spacer directly contacts both the adhesive layer and the second substrate. The encapsulation layer is disposed between the first substrate and the second substrate.
Inkjet adhesive, manufacturing method for semiconductor device, and electronic component
Provided is an inkjet adhesive which is applied using an inkjet device, wherein the adhesive can suppress generation of voids in the adhesive layer and, after bonding, can enhance adhesiveness, moisture-resistant adhesion reliability, and cooling/heating cycle reliability. An inkjet adhesive according to the present invention comprises a photocurable compound, a photo-radical initiator, a thermosetting compound having one or more cyclic ether groups or cyclic thioether groups, and a compound capable of reacting with the thermosetting compound, and the compound capable of reacting with the thermosetting compound contains aromatic amine.
Multilayer substrate
Provided is a multilayer substrate obtained by laminating semiconductor substrates each having a trough electrode. The multilayer substrate has excellent conduction characteristics and can be manufactured at low cost. Conductive particles are each selectively present at a position where the through electrodes face each other as viewed in a plan view of the multilayer substrate. The multilayer substrate has a connection structure in which the facing through electrodes are connected by the conductive particles, and the semiconductor substrates each having the through electrode are bonded by an insulating adhesive.
Ag UNDERLAYER- ATTACHED METALLIC MEMBER, Ag UNDERLAYER- ATTACHED INSULATING CIRCUIT SUBSTRATE,SEMICONDUCTOR DEVICE, HEAT SINK- ATTACHED INSULATING CIRCUIT SUBSTRATE, AND METHOD FOR MANUFACTURING Ag UNDERLAYER-ATTACHED METALLIC MEMBER
An Ag underlayer-attached metallic member includes a metallic member joined with a body to be joined and an Ag underlayer formed on a joining surface of the metallic member with the body to be joined, the Ag underlayer includes a glass layer formed on a metallic member side and an Ag layer laminated on the glass layer, and an area proportion of voids in an Ag layer surface of the Ag underlayer is 25% or less.