Some embodiments relate to a three-dimensional (3D) integrated circuit (IC). The 3D IC includes a first IC die comprising a first semiconductor substrate, and a first interconnect structure over the first semiconductor substrate. The 3D IC also includes a second IC die comprising a second semiconductor substrate, and a second interconnect structure that separates the second semiconductor substrate from the first interconnect structure. A seal ring structure separates the first interconnect structure from the second interconnect structure and perimetrically surrounds a gas reservoir between the first IC die and second IC die. The seal ring structure includes a sidewall gas-vent opening structure configured to allow gas to pass between the gas reservoir and an ambient environment surrounding the 3D IC.

Some embodiments relate to a three-dimensional (3D) integrated circuit (IC). The 3D IC includes a first IC die comprising a first semiconductor substrate, and a first interconnect structure over the first semiconductor substrate. The 3D IC also includes a second IC die comprising a second semiconductor substrate, and a second interconnect structure that separates the second semiconductor substrate from the first interconnect structure. A seal ring structure separates the first interconnect structure from the second interconnect structure and perimetrically surrounds a gas reservoir between the first IC die and second IC die. The seal ring structure includes a sidewall gas-vent opening structure configured to allow gas to pass between the gas reservoir and an ambient environment surrounding the 3D IC.

Some embodiments relate to a three-dimensional (3D) integrated circuit (IC). The 3D IC includes a first IC die comprising a first semiconductor substrate, and a first interconnect structure over the first semiconductor substrate. The 3D IC also includes a second IC die comprising a second semiconductor substrate, and a second interconnect structure that separates the second semiconductor substrate from the first interconnect structure. A seal ring structure separates the first interconnect structure from the second interconnect structure and perimetrically surrounds a gas reservoir between the first IC die and second IC die. The seal ring structure includes a sidewall gas-vent opening structure configured to allow gas to pass between the gas reservoir and an ambient environment surrounding the 3D IC.

A semiconductor manufacturing system comprises a laser and a heated bond tip and is configured to bond a die stack in a semiconductor assembly. The semiconductor assembly includes a wafer, manufacture from a material that is optically transparent to a beam emitted by the laser and configured to support a die stack comprising a plurality of semiconductor dies. A metal film is deposited on the wafer and heatable by the beam emitted by the laser. The heated bond tip applies heat and pressure to the die stack, compressing the die stack between the heated bond tip and the metal film and thermally bonding dies in the stack by heat emitted by the heated bond tip and the metal film when the metal film is heated by the beam emitted from the laser.

A microelectronic assembly including an insulating layer having a plurality of nanoscale conductors disposed in a nanoscale pitch array therein and a pair of microelectronic elements is provided. The nanoscale conductors can form electrical interconnections between contacts of the microelectronic elements while the insulating layer can mechanically couple the microelectronic elements together.

A device with thermal control is presented. In some embodiments, the device includes a plurality of die positioned in a stack, each die including a chip, interconnects through a thickness of the chip, metal features of electrically conductive composition connected to the interconnects on a bottom side of the chip, and adhesive or underfill layer on the bottom side of the chip. At least one thermally conducting layer, which can be a pyrolytic graphite layer, a layer formed of carbon nanotubes, or a graphene layer, is coupled between a top side of one of the plurality of die and a bottom side of an adjoining die in the stack. A heat sink can be coupled to the thermally conducting layer.

Embodiments relate to forming nanoporous contacts on a receiving substrate without using a seed layer on the receiving substrate. The nanoporous contacts can be used to create bonds between electronic components and the receiving substrate. To form the contacts, a photoresist mask is created on the receiving substrate by a photolithographic process. Through a sputtering process, portions of co-alloy on a depositing substrate are transferred to the receiving substrate with the photoresist mask. The photoresist mask is removed from the receiving substrate. The remaining co-alloy portions on the receiving substrate undergo a de-alloying process to form an array of nanoporous contacts.

Embodiments relate to forming nanoporous contacts on a receiving substrate without using a seed layer on the receiving substrate. The nanoporous contacts can be used to create bonds between electronic components and the receiving substrate. To form the contacts, a photoresist mask is created on the receiving substrate by a photolithographic process. Through a sputtering process, portions of co-alloy on a depositing substrate are transferred to the receiving substrate with the photoresist mask. The photoresist mask is removed from the receiving substrate. The remaining co-alloy portions on the receiving substrate undergo a de-alloying process to form an array of nanoporous contacts.

A package includes a circuit that includes at least one active area and at least one secondary device area, a support configured to support the circuit, and a die attach material. The circuit being mounted on the support using the die attach material and the die attach material including at least one channel configured to allow gases generated during curing of the die attach material to be released from the die attach material.

An integrated circuit package includes at least one electronic chip having a first face fastened onto a first face of a carrier substrate by an adhesive interface. The adhesive interface includes a crown formed of a first adhesive material that is fastened on the periphery of the first face of the electronic chip. The crown defining an internal housing. A second adhesive material, different than the first material, is deposited in the internal housing.