H01L2224/2781

Integrated circuit package and method of making same

A chip package includes a first die with an active surface having at least one die pad positioned thereon; a first adhesive layer having a first surface coupled to the active surface of the first die and a second surface opposite the first surface; and a first dielectric layer having a top surface. A first portion of the top surface of the first dielectric layer is coupled to the second surface of the first adhesive layer. A second portion of the top surface of the first dielectric layer, distinct from the first portion, is substantially free of adhesive.

Semiconductor device with metal silicide layer
12300654 · 2025-05-13 · ·

A semiconductor device and a method of manufacturing a semiconductor are provided. In an embodiment, a method of manufacturing a semiconductor device is provided. A first surface of a metal silicide layer may be treated with an oxidizing agent to oxidize metal silicide protrusions on the first surface of the metal silicide layer. After treating the first surface with the oxidizing agent, the first surface may be treated with a cleaning agent to remove oxide over the metal silicide protrusions, wherein a size of a metal silicide protrusion of the metal silicide protrusions after treating the first surface with the cleaning agent is smaller than a size of the metal silicide protrusion prior to treating the first surface with the oxidizing agent.

SINTERING FOR SEMICONDUCTOR DEVICE ASSEMBLIES

In a general aspect, a method includes coupling a sintering film with a carrier tape cutting the sintering film into a plurality of sintering film portions, and removing a sintering film portion of the plurality of sintering film portions from the carrier tape. The method further includes disposing the sintering film portion on a surface of a semiconductor device assembly, and performing a thermal operation to couple the sintering film portion to the surface of the semiconductor device assembly.

LAND-SIDE DIE COOLING OF DOUBLE-SIDED PACKAGE SUBSTRATES

Semiconductor device assemblies that comprise a package substrate having semiconductor devices on two sides. A solder layer can thermally couple one or more semiconductor devices on a side of the package with a circuit board. Methods of manufacturing assemblies having a semiconductor device thermally coupled to a circuit board are also provided.