An adhesive for a semiconductor, comprising an epoxy resin, a curing agent, and a compound having a group represented by the following formula (1): ##STR00001##
wherein R.sup.1 represents an electron-donating group.

An adhesive for a semiconductor, comprising an epoxy resin, a curing agent, and a compound having a group represented by the following formula (1): ##STR00001##
wherein R.sup.1 represents an electron-donating group.

A semiconductor device includes a substrate including, on a surface thereof, a first conductive pad and a first insulating layer formed around the first conductive pad, a semiconductor chip including, on a surface thereof, a second conductive pad and a second insulating layer around the second conductive pad, an intermediate layer formed between the substrate and the semiconductor chip, and including a conductive portion between the first and second conductive pads, and an insulating portion between the first and second insulating layers, and a molecular bonding layer formed between the substrate and the intermediate layer, and including at least one of a first molecular portion covalently bonded to a material of the first conductive pad and a material of the conductive portion, and a second molecular portion covalently bonded to a material of the first insulating layer and a material of the insulating portion.

A semiconductor device includes a base, a semiconductor chip on the base, a conductive bonding layer between a surface of the base and a surface of the semiconductor chip, the conductive bonding layer including a resin and a plurality of conductive particles contained in the resin, and a molecular bonding layer between the surface of the semiconductor chip and a surface of the conductive bonding layer, and including a molecular portion covalently bonded to a material of the semiconductor chip and a material of the conductive bonding layer.

A method for manufacturing a semiconductor apparatus, including preparing a first substrate provided with a pad optionally having a plug and a second substrate or device provided with a plug, forming a solder ball on at least one of the pad or plug of first substrate and the plug of second substrate or device, covering at least one of a pad-forming surface of first substrate and a plug-forming surface of second substrate or device with a photosensitive insulating layer, forming an opening on the pad or plug of the substrate or device that has been covered with photosensitive insulating layer by lithography, pressure-bonding the second substrate or device's plug to the pad or plug of first substrate with the solder ball through the opening, electrically connecting pad or plug of first substrate to second substrate or device's plug by baking, and curing photosensitive insulating layer by baking.

A method for manufacturing a semiconductor apparatus, including preparing a first substrate provided with a pad optionally having a plug and a second substrate or device provided with a plug, forming a solder ball on at least one of the pad or plug of first substrate and the plug of second substrate or device, covering at least one of a pad-forming surface of first substrate and a plug-forming surface of second substrate or device with a photosensitive insulating layer, forming an opening on the pad or plug of the substrate or device that has been covered with photosensitive insulating layer by lithography, pressure-bonding the second substrate or device's plug to the pad or plug of first substrate with the solder ball through the opening, electrically connecting pad or plug of first substrate to second substrate or device's plug by baking, and curing photosensitive insulating layer by baking.

Embodiments of the present disclosure describe a die with integrated microphone device using through-silicon vias (TSVs) and associated techniques and configurations. In one embodiment, an apparatus includes an apparatus comprising a semiconductor substrate having a first side and a second side disposed opposite to the first side, an interconnect layer formed on the first side of the semiconductor substrate, a through-silicon via (TSV) formed through the semiconductor substrate and configured to route electrical signals between the first side of the semiconductor substrate and the second side of the semiconductor substrate, and a microphone device formed on the second side of the semiconductor substrate and electrically coupled with the TSV. Other embodiments may be described and/or claimed.

Embodiments of the present disclosure describe a die with integrated microphone device using through-silicon vias (TSVs) and associated techniques and configurations. In one embodiment, an apparatus includes an apparatus comprising a semiconductor substrate having a first side and a second side disposed opposite to the first side, an interconnect layer formed on the first side of the semiconductor substrate, a through-silicon via (TSV) formed through the semiconductor substrate and configured to route electrical signals between the first side of the semiconductor substrate and the second side of the semiconductor substrate, and a microphone device formed on the second side of the semiconductor substrate and electrically coupled with the TSV. Other embodiments may be described and/or claimed.

Provided is an inkjet adhesive which is applied using an inkjet device, wherein the adhesive can suppress generation of voids in the adhesive layer and, after bonding, can enhance adhesiveness, moisture-resistant adhesion reliability, and cooling/heating cycle reliability. An inkjet adhesive according to the present invention comprises a photocurable compound, a photo-radical initiator, a thermosetting compound having one or more cyclic ether groups or cyclic thioether groups, and a compound capable of reacting with the thermosetting compound, and the compound capable of reacting with the thermosetting compound contains aromatic amine.

Implementations of semiconductor packages may include: a semiconductor wafer, a glass lid fixedly coupled to a first side of the semiconductor die by an adhesive, a redistribution layer coupled to a second side of the semiconductor die, and a plurality of ball mounts coupled to the redistribution layer on a side of the redistribution layer coupled to the semiconductor die. The adhesive may be located in a trench around a perimeter of the semiconductor die and located in a corresponding trench around a perimeter of the glass lid.