Provided is a semiconductor device manufacturing method through which semiconductor elements are multilayered through the lamination of wafers in which the semiconductor elements are fabricated, the method thereof being suited for efficiently manufacturing semiconductor devices while realizing a large number of wafer lamination. With the method of the present invention, at least two wafer laminates are formed, each wafer laminate having a laminated structure, the structure including a plurality of wafers including an element forming surface and a back surface, with the element forming surface and the back surface facing between adjacent wafers; a through electrode is formed in each wafer laminate with the through electrode extending through an inside of the wafer laminate, from an element forming surface side of a first wafer located at one end of the wafer laminate in a lamination direction, to a position exceeding an element forming surface of a second wafer located at another end; the through electrode is exposed at a back surface side of the second wafer by grinding the back surface side thereof; and two wafer laminates that have been subjected to this exposing step are laminated and bonded while electrically connecting the through electrodes between the wafer laminates.

A silver-indium transient liquid phase method of bonding a semiconductor device and a heat-spreading mount, and a semiconductor structure having a silver-indium transient liquid phase bonding joint are provided. With the ultra-thin silver-indium transient liquid phase bonding joint formed between the semiconductor device and the heat-spreading mount, its thermal resistance can be minimized to achieve a high thermal conductivity. Therefore, the heat spreading capability of the heat-spreading mount can be fully realized, leading to an optimal performance of the high power electronics and photonics devices.

There is provided a bonding paste capable of forming a uniform bonding layer by reducing occurrence of voids at edges even when a bonding area is large, and bonding method using the paste, and provides a metal paste for bonding containing at least metal nanoparticles (A) having a number average primary particle size of 10 to 100 nm, wherein a cumulative weight loss value (L.sub.100) when a temperature is raised from 40° C. to 100° C. is 75 or less, and a cumulative weight loss value (L.sub.150) when a temperature is raised from 40° C. to 150° C. is 90 or more, and a cumulative weight loss value (L.sub.200) when a temperature is raised from 40° C. to 200° C. is 98 or more, based on 100 cumulative weight loss value (L.sub.700) when the paste is heated from 40° C. to 700° C. at a heating rate of 3° C./min in a nitrogen atmosphere.

There is provided a bonding paste capable of forming a uniform bonding layer by reducing occurrence of voids at edges even when a bonding area is large, and bonding method using the paste, and provides a metal paste for bonding containing at least metal nanoparticles (A) having a number average primary particle size of 10 to 100 nm, wherein a cumulative weight loss value (L.sub.100) when a temperature is raised from 40° C. to 100° C. is 75 or less, and a cumulative weight loss value (L.sub.150) when a temperature is raised from 40° C. to 150° C. is 90 or more, and a cumulative weight loss value (L.sub.200) when a temperature is raised from 40° C. to 200° C. is 98 or more, based on 100 cumulative weight loss value (L.sub.700) when the paste is heated from 40° C. to 700° C. at a heating rate of 3° C./min in a nitrogen atmosphere.

A semiconductor device and a method of manufacturing a semiconductor are provided. In an embodiment, a method of manufacturing a semiconductor device is provided. A first layer is formed over a silicon carbide (SiC) layer. The first layer has a first surface distal the SiC layer and a second surface proximal the SiC layer. The first layer includes a metal. First thermal energy may be directed to the first surface of the first layer to form a metal silicide layer from the metal of the first layer and silicon of the SiC layer. The metal silicide layer has a first surface distal the SiC layer and a second surface proximal the SiC layer. Second thermal energy may be directed to the first surface of the metal silicide layer to reduce a surface roughness of the first surface of the metal silicide layer

A method for forming a connection between two connection partners includes: forming a pre-connection layer on a first surface of a first connection partner, the pre-connection layer including a certain amount of liquid; performing a pre-connection process, thereby removing liquid from the pre-connection layer; performing photometric measurements while performing the pre-connection process, wherein performing the photometric measurements includes determining at least one photometric parameter of the pre-connection layer, wherein the at least one photometric parameter changes depending on the fluid content of the pre-connection layer; and constantly evaluating the at least one photometric parameter, wherein the pre-connection process is terminated when the at least one photometric parameter is detected to be within a desired range.

A method for forming a connection between two connection partners includes: forming a pre-connection layer on a first surface of a first connection partner, the pre-connection layer including a certain amount of liquid; performing a pre-connection process, thereby removing liquid from the pre-connection layer; performing photometric measurements while performing the pre-connection process, wherein performing the photometric measurements includes determining at least one photometric parameter of the pre-connection layer, wherein the at least one photometric parameter changes depending on the fluid content of the pre-connection layer; and constantly evaluating the at least one photometric parameter, wherein the pre-connection process is terminated when the at least one photometric parameter is detected to be within a desired range.

The invention is directed towards enhanced systems and methods for employing a pulsed photon (or EM energy) source, such as but not limited to a laser, to electrically couple, bond, and/or affix the electrical contacts of a semiconductor device to the electrical contacts of another semiconductor devices. Full or partial rows of LEDs are electrically coupled, bonded, and/or affixed to a backplane of a display device. The LEDs may be μLEDs. The pulsed photon source is employed to irradiate the LEDs with scanning photon pulses. The EM radiation is absorbed by either the surfaces, bulk, substrate, the electrical contacts of the LED, and/or electrical contacts of the backplane to generate thermal energy that induces the bonding between the electrical contacts of the LEDs' electrical contacts and backplane's electrical contacts. The temporal and spatial profiles of the photon pulses, as well as a pulsing frequency and a scanning frequency of the photon source, are selected to control for adverse thermal effects.

The invention is directed towards enhanced systems and methods for employing a pulsed photon (or EM energy) source, such as but not limited to a laser, to electrically couple, bond, and/or affix the electrical contacts of a semiconductor device to the electrical contacts of another semiconductor devices. Full or partial rows of LEDs are electrically coupled, bonded, and/or affixed to a backplane of a display device. The LEDs may be μLEDs. The pulsed photon source is employed to irradiate the LEDs with scanning photon pulses. The EM radiation is absorbed by either the surfaces, bulk, substrate, the electrical contacts of the LED, and/or electrical contacts of the backplane to generate thermal energy that induces the bonding between the electrical contacts of the LEDs' electrical contacts and backplane's electrical contacts. The temporal and spatial profiles of the photon pulses, as well as a pulsing frequency and a scanning frequency of the photon source, are selected to control for adverse thermal effects.

The invention is directed towards enhanced systems and methods for employing a pulsed photon (or EM energy) source, such as but not limited to a laser, to electrically couple, bond, and/or affix the electrical contacts of a semiconductor device to the electrical contacts of another semiconductor devices. Full or partial rows of LEDs are electrically coupled, bonded, and/or affixed to a backplane of a display device. The LEDs may be μLEDs. The pulsed photon source is employed to irradiate the LEDs with scanning photon pulses. The EM radiation is absorbed by either the surfaces, bulk, substrate, the electrical contacts of the LED, and/or electrical contacts of the backplane to generate thermal energy that induces the bonding between the electrical contacts of the LEDs' electrical contacts and backplane's electrical contacts. The temporal and spatial profiles of the photon pulses, as well as a pulsing frequency and a scanning frequency of the photon source, are selected to control for adverse thermal effects.