A semiconductor module may include a semiconductor chip; a first electrode body; and a second electrode body; wherein the semiconductor chip may include a semiconductor substrate; a first electrode layer that is in contact with a center portion of a first surface of the semiconductor substrate and is out of contact with a peripheral portion of the first surface; and a second electrode layer that is in contact with a center portion of a second surface of the semiconductor substrate and is out of contact with a peripheral portion of the second surface, the second surface being located on an opposite side with respect to the first surface, the first electrode body is connected to the first electrode layer via a first solder layer, and the second electrode body is connected to the second electrode layer via a second solder layer.

An apparatus for eutectic bonding includes (a) a bonding frame that includes two substrates and (b) a frame device situated on the substrates, the frame device including two frames, the apparatus being usable to develop a eutectic, formed during bonding, in a spatially defined manner, whereby a volume formed by the frames and the substrates can be filled up completely with the eutectic.

An apparatus for eutectic bonding includes (a) a bonding frame that includes two substrates and (b) a frame device situated on the substrates, the frame device including two frames, the apparatus being usable to develop a eutectic, formed during bonding, in a spatially defined manner, whereby a volume formed by the frames and the substrates can be filled up completely with the eutectic.

A semiconductor device includes a substrate, a first semiconductor package disposed on the substrate, and a second semiconductor package spaced apart from the first semiconductor package on the substrate. The second semiconductor package includes a semiconductor chip stacked on the substrate, an adhesion part covering the semiconductor chip, and a heat-blocking structure disposed between the substrate and the semiconductor chip. Heat generated from the first semiconductor package and transmitted to the second semiconductor package through the substrate is blocked by the heat-blocking structure.

The present disclosure provides a method of creating a bond between a first object and a second object. For example, creating a joint or die attach between a semiconductor chip and an electronic substrate, especially for harsh and high temperature environments. The method may include a step of filling a space between the first object and the second object with a filler material. Further, the method may include a step of heating the filler material to facilitate formation of a plurality of inter-diffusion layers. Accordingly, a first inter-diffusion layer may be formed between the filler material and the first object. Further, a second inter-diffusion layer may be formed between the filler material and the second object. Furthermore, in some embodiments, the first inter-diffusion layer may be contiguous with the second inter-diffusion layer. The contiguity may be facilitated by placement of at least one insert between the first object and the second object, in which the inter-diffusion of the filler material and the at least one insert may produce the third inter-diffusion layer, wherein the third inter-diffusion layer is contiguous with each of the first inter-diffusion layer and the second inter-diffusion layer.

The present disclosure provides a method of creating a bond between a first object and a second object. For example, creating a joint or die attach between a semiconductor chip and an electronic substrate, especially for harsh and high temperature environments. The method may include a step of filling a space between the first object and the second object with a filler material. Further, the method may include a step of heating the filler material to facilitate formation of a plurality of inter-diffusion layers. Accordingly, a first inter-diffusion layer may be formed between the filler material and the first object. Further, a second inter-diffusion layer may be formed between the filler material and the second object. Furthermore, in some embodiments, the first inter-diffusion layer may be contiguous with the second inter-diffusion layer. The contiguity may be facilitated by placement of at least one insert between the first object and the second object, in which the inter-diffusion of the filler material and the at least one insert may produce the third inter-diffusion layer, wherein the third inter-diffusion layer is contiguous with each of the first inter-diffusion layer and the second inter-diffusion layer.

A bonding film for bonding a semiconductor element and a substrate. The bonding film has an electroconductive bonding layer formed by molding an electroconductive paste including metal fine particles (P) into a film form, and a tack layer having tackiness and laminated on the electroconductive bonding layer. The tack layer includes 0.1% to 1.0% by mass of metal fine particles (M) with respect to the metal fine particles (P) in the electroconductive bonding layer, and the metal fine particles (M) have a melting point of 250 C. or lower.