A gold-coated silver bonding wire includes: a core material containing silver as a main component; and a coating layer provided on a surface of the core material and containing gold as a main component. The gold-coated silver bonding wire contains gold in a range of not less than 2 mass % nor more than 7 mass %, and at least one sulfur group element selected from the group consisting of sulfur, selenium, and tellurium in a range of not less than 1 mass ppm nor more than 80 mass ppm, with respect to a total content of the bonding wire.

A method for manufacturing a bonding wire includes: putting a surface layer metal of a bonding wire in a crucible having a die cooler provided at the lower part thereof and melting the same; putting a main component metal core of the bonding wire in a core guide located at the upper part of the die cooler of the crucible and heating the core guide to the melting point or below of the metal core; transferring the metal core toward the die cooler so as to allow the molten surface layer metal to be injected to the surface of the metal core; and manufacturing a 50 μm to 350 μm bonding wire from the cast wire precursor by using a drawing die.

The present disclosure provides a chip package structure having a heat sink and a method making the same. The method includes: bonding a chip to a top surface of a package substrate and forming a heat-conducting lead having an arc-shape and placed on the chip in a vertical direction, a first end of the heat-conducting lead is connected with a surface of the chip, and a second end is connected with a solder ball; forming a plastic package material layer that protects the chip and the heat-conducting lead; forming a heat-conducting adhesive layer on the surface of the plastic package material layer, where the heat-conducting adhesive layer is connected with the solder ball on the second end of the heat-conducting lead; and forming a heat dissipation layer on a surface of the heat-conducting adhesive layer. With the present disclosure, the heat dissipation efficiency of the chip is effectively improved.

A manufacturing method of a plated wire rod, the method including: preparing a plated wire rod precursor including a base material that is wire-drawn and that has a linear shape and a plating film that is provided on a surface of the base material, where the base material is made of first metal and the plating film is made of second metal of a different composition from the first metal; obtaining a plated wire rod-intermediate body by performing skin-passing on the plated wire rod precursor using a die; inspecting, after the skin-passing, for presence/absence of a defect in the plated wire rod-intermediate body using an eddy current testing device and a camera inspection device; and obtaining a plated wire rod by removing the defect in the plated wire rod-intermediate body that is detected in the inspecting.

The present disclosure provides a chip package structure having a heat sink and a method making the same. The method includes: bonding a chip to a top surface of a package substrate and forming a heat-conducting lead having an arc-shape and placed on the chip in a vertical direction, a first end of the heat-conducting lead is connected with a surface of the chip, and a second end is connected with a solder ball; forming a plastic package material layer that protects the chip and the heat-conducting lead; forming a heat-conducting adhesive layer on the surface of the plastic package material layer, where the heat-conducting adhesive layer is connected with the solder ball on the second end of the heat-conducting lead; and forming a heat dissipation layer on a surface of the heat-conducting adhesive layer. With the present disclosure, the heat dissipation efficiency of the chip is effectively improved.

There is provided a bonding wire that improves bonding reliability of a ball bonded part and ball formability and is suitable for on-vehicle devices. The bonding wire for a semiconductor includes a Cu alloy core material, and a Pd coating layer formed on a surface of the Cu alloy core material, and is characterized in that the Cu alloy core material contains Ni, a concentration of Ni is 0.1 to 1.2 wt. % relative to the entire wire, and a thickness of the Pd coating layer is 0.015 to 0.150 m.

A method for manufacturing a bonding wire includes: putting a surface layer metal of a bonding wire in a crucible having a die cooler provided at the lower part thereof and melting the same; putting a main component metal core of the bonding wire in a core guide located at the upper part of the die cooler of the crucible and heating the core guide to the melting point or below of the metal core; transferring the metal core toward the die cooler so as to allow the molten surface layer metal to be injected to the surface of the metal core; and manufacturing a 50 m to 350 m bonding wire from the cast wire precursor by using a drawing die.

The present invention discloses a high-reliability copper alloy bonding wire for electronic packaging and a preparation method therefor; the bonding wire comprises the following raw material components in percentage by weight: a copper content being 99.75%-99.96%, a tungsten content being 0.01-0.1%, a silver content being 0.01%-0.03%, a scandium content being 0.01%-0.02%, a titanium content being 0.001%-0.03%, a chromium content being 0.001%-0.03%, and an iron content being 0.001%-0.02%. The preparation method therefor comprises: extracting high-purity copper with a purity greater than 99.99%, preparing same as copper alloy ingots, and further preparing same as as-cast copper alloy crude bars, drawing the crude bars to form copper alloy wires, subjecting same to a heat treatment, and then precise drawing, a heat treatment, and cleaning to obtain copper alloy bonding wires of different specifications.

Provided is a Pd coated Cu bonding wire for a semiconductor device capable of sufficiently obtaining bonding reliability of a ball bonded portion in a high temperature environment of 175 C. or more, even when the content of sulfur in the mold resin used in the semiconductor device package increases.

The bonding wire for a semiconductor device comprises a Cu alloy core material; and a Pd coating layer formed on a surface of the Cu alloy core material; and contains 0.03 to 2% by mass in total of one or more elements selected from Ni, Rh, Ir and Pd in the bonding wire and further 0.002 to 3% by mass in total of one or more elements selected from Li, Sb, Fe, Cr, Co, Zn, Ca, Mg, Pt, Sc and Y. The bonding wire can be sufficiently obtained bonding reliability of a ball bonded portion in a high temperature environment of 175 C. or more, even when the content of sulfur in the mold resin used in the semiconductor device package increases by being used.

The present invention provides a bonding wire capable of simultaneously satisfying ball bonding reliability and wedge bondability required of bonding wires for memories, the bonding wire including a core material containing one or more of Ga, In, and Sn for a total of 0.1 to 3.0 at % with a balance being made up of Ag and incidental impurities; and a coating layer formed over a surface of the core material, containing one or more of Pd and Pt, or Ag and one or more of Pd and Pt, with a balance being made up of incidental impurities, wherein the coating layer is 0.005 to 0.070 m in thickness.