An arrangement for joining two joining members includes a first part having a support surface, a first carrier element configured to carry at least one foil, a transportation unit configured to arrange the first carrier element such that the foil is arranged above the support surface in a vertical direction, and a second part configured to exert pressure to a joining stack, when the joining stack is arranged on the support surface. The joining stack includes a first joining member arranged on the support surface, a second joining member, and an electrically conductive connection layer arranged between the joining members. When pressure is exerted on the joining stack, the foil is arranged between the second part and the joining stack and is pressed onto the joining stack and the joining stack is pressed onto the first part, compressing the connection layer and forming a bond between the joining members.

The invention enables quick evacuation of a chamber to a specified target degree of vacuum while increasing selectivity of evacuation conditions. A vacuum-processing device contains a chamber 40 that enables a workpiece to be soldered in a vacuum environment, an operating part 20 that sets a condition for evacuating the chamber 40, a pump 23 that evacuates the chamber 40, and a control portion 61 that calculates the amount of decrease in the degree of vacuum when evacuating the chamber 40 using a predetermined pump output, sets the calculated value as a reference value and switches an evacuation property from the evacuation property including a lower pump output to the evacuation property including a higher pump output when the calculated amount of decrease in degree of vacuum in real time has become smaller than the reference value.

Embodiments of a thermal compression bonding (TCB) process cooling manifold, a TCB process system, and a method for TCB using the cooling manifold are disclosed. In some embodiments, the cooling manifold comprises a pre-mixing chamber that is separated from a mixing chamber by a baffle. The baffle may comprise at least one concentric pattern formed through the baffle such that the primary cooling fluid in the pre-mixing chamber is substantially evenly distributed to the mixing chamber. The pre-mixing chamber may be coupled to a source of primary cooling fluid. The mixing chamber may have an input configured to accept the primary cooling fluid and an output to output the primary cooling fluid.

The invention relates to an apparatus for especially thermally joining micro-electromechanical parts (2, 3) in a process chamber (8), comprising a bottom support plate (11) for holding at least one first (2) of the parts (2, 3) to be joined, and a pressing device (15) for applying pressure to at least one second (3) of the parts (2, 3) to be joined in relation to the at least one first part (2). The pressing device (15) is equipped with an expandable membrane (19) provided for entering in contact with the at least one second part (3). Fluid pressure, in particular gas pressure, can be applied to said membrane (19) on the side thereof facing away from the parts (2, 3) to be joined.

Process for producing an electronic subassembly by low-temperature pressure sintering, comprising the following steps: arranging an electronic component on a circuit carrier having a conductor track, connecting the electronic component to the circuit carrier by the low-temperature pressure sintering of a joining material which connects the electronic component to the circuit carrier, characterized in that, to avoid the oxidation of the electronic component or of the conductor track, the low-temperature pressure sintering is carried out in a low-oxygen atmosphere having a relative oxygen content of 0.005 to 0.3%.

A production of voids between substrates is prevented when the substrates are bonded together, and the substrates are bonded together at a high positional precision while suppressing a strain. A method for bonding a first substrate and a second substrate includes a step of performing hydrophilization treatment to cause water or an OH containing substance to adhere to bonding surface of the first substrate and the bonding surface of the second substrate, a step of disposing the first substrate and the second substrate with the respective bonding surfaces facing each other, and bowing the first substrate in such a way that a central portion of the bonding surface protrudes toward the second substrate side relative to an outer circumferential portion of the bonding surface, a step of abutting the bonding surface of the first substrate with the bonding surface of the second substrate at the respective central portions, and a step of abutting the bonding surface of the first substrate with the bonding surface of the second substrate across the entirety of the bonding surfaces, decreasing a distance between the outer circumferential portion of the first substrate and an outer circumferential portion of the second substrate with the respective central portions abutting each other at a pressure that maintains a non-bonded condition.

A solder reflow oven may include a reflow chamber and a plurality of vertically spaced apart wafer-support plates positioned in the reflow chamber. A plurality of semiconductor wafers each including a solder are configured to be disposed in the reflow chamber such that each semiconductor wafer is disposed proximate to, and vertically spaced apart from, a wafer-support plate. Each wafer-support plate may include at least one of liquid-flow channels or resistive heating elements. A control system control the flow of a hot liquid through the channels or activate the heating elements to heat a wafer to a temperature above the solder reflow temperature.

A bonding system for bonding a semiconductor element to a substrate is provided. The bonding system includes a substrate oxide reduction chamber configured to receive a substrate. The substrate includes a plurality of first electrically conductive structures. The substrate oxide reduction chamber is configured to receive a reducing gas to contact each of the plurality of first electrically conductive structures. The bonding system also includes a substrate oxide prevention chamber for receiving the substrate after the reducing gas contacts the plurality of first electrically conductive structures. The substrate oxide prevention chamber has an inert environment when receiving the substrate. The bonding system also includes a reducing gas delivery system for providing a reducing gas environment during bonding of a semiconductor element to the substrate.

A bonder includes a first chuck unit 1A, a second chuck unit 1B, a first base 21A, a second base 21B, and a first floating mechanism 3A. The first chuck unit 1A and the second chuck unit 1B are chuck units in a pair including respective suction surfaces for suction of bonding targets and are arranged while respective suction surfaces 11a and 11b face each other. The first base 21A and the second base 21B support the first chuck unit 1A and the second chuck unit 1B respectively. The first floating mechanism 3A applies gas pressure to a back surface 12a of the first chuck unit 1A to float the first chuck unit 1A from the first base 21A, thereby moving the suction surface 11a of the first chuck unit 1A toward the suction surface 11b of the second chuck unit 1B.

A solder reflow oven may include a reflow chamber and a plurality of vertically spaced apart wafer-support plates positioned in the reflow chamber. A plurality of semiconductor wafers each including a solder are configured to be disposed in the reflow chamber such that each semiconductor wafer is disposed proximate to, and vertically spaced apart from, a wafer-support plate. Each wafer-support plate may include at least one of liquid-flow channels or resistive heating elements. A control system control the flow of a hot liquid through the channels or activate the heating elements to heat a wafer to a temperature above the solder reflow temperature.