A flexible circuit film bonding apparatus includes: a stage configured to support a TFT substrate; a pressing head configured to press and heat a flexible circuit film attached on the TFT substrate with an anisotropic conductive film interposed therebetween; a backup plate configured to support and heat the TFT substrate positioned below the flexible circuit film; and a heating control unit configured to control a temperature of a lower surface of the pressing head and an upper surface of the backup plate, wherein the temperature of the upper surface of the backup plate is less than 170 degrees Celsius.

A bonding system for bonding a semiconductor element to a substrate is provided. The bonding system includes a substrate oxide reduction chamber configured to receive a substrate. The substrate includes a plurality of first electrically conductive structures. The substrate oxide reduction chamber is configured to receive a reducing gas to contact each of the plurality of first electrically conductive structures. The bonding system also includes a substrate oxide prevention chamber for receiving the substrate after the reducing gas contacts the plurality of first electrically conductive structures. The substrate oxide prevention chamber has an inert environment when receiving the substrate. The bonding system also includes a reducing gas delivery system for providing a reducing gas environment during bonding of a semiconductor element to the substrate.

The present invention has: a heater; and a bonding tool having a lower surface on which a memory chip is adsorbed; and an upper surface attached to the heater, and is provided with a bonding tool which presses the peripheral edge of the memory chip to a solder ball in a first peripheral area of the lower surface and which presses the center of the memory chip (60) to a DAF having a heat resistance temperature lower than that of the solder ball in a first center area. The amount of heat transmitted from the first center area to the center of the memory chip is smaller than that transmitted from the first peripheral area (A) to the peripheral edge of the memory chip. Thus, the bonding apparatus in which the center of a bonding member can be heated to a temperature lower than that at the peripheral edge can be provided.

The present invention has: a heater; and a bonding tool having a lower surface on which a memory chip is adsorbed; and an upper surface attached to the heater, and is provided with a bonding tool which presses the peripheral edge of the memory chip to a solder ball in a first peripheral area of the lower surface and which presses the center of the memory chip (60) to a DAF having a heat resistance temperature lower than that of the solder ball in a first center area. The amount of heat transmitted from the first center area to the center of the memory chip is smaller than that transmitted from the first peripheral area (A) to the peripheral edge of the memory chip. Thus, the bonding apparatus in which the center of a bonding member can be heated to a temperature lower than that at the peripheral edge can be provided.

The invention relates to a method for producing a solder connection between a plurality of components (12A, 12B) in a process chamber (74) sealed off from its surroundings by heating and melting solder material (16) which is arranged between the components (12A, 12B) to be connected. It is proposed that the components (12A, 12B) to be connected are provisionally connected with a bonding material (18) to form a solder group (10) in which the components (12A, 12B) are fixed relative to one another in a joining position.

A component joining apparatus, which can realize positioning between a component and a substrate with high accuracy by avoiding influence of thermal expansion of the substrate at the time of joining the component to the substrate by heating at a high temperature, includes a component supply head holding a component and a heating stage heating and holding a substrate, in which a heating region where the heating stage contacts the substrate includes a joining region of the substrate in which the component is joined, and the substrate is larger than the heating stage and a peripheral part of the substrate does not contact the heating stage.

Disclosed is a method for manufacturing a semiconductor device which includes: a semiconductor chip; a substrate and/or another semiconductor chip; and an adhesive layer interposed therebetween. This method comprises the steps of: heating and pressuring a laminate having: the semiconductor chip; the substrate; the another semiconductor chip or a semiconductor wafer; and the adhesive layer by interposing the laminate with pressing members for temporary press-bonding to thereby temporarily press-bond the substrate and the another semiconductor chip or the semiconductor wafer to the semiconductor chip; and heating and pressuring the laminate by interposing the laminate with pressing members for main press-bonding, which are separately prepared from the pressing members for temporary press-bonding, to thereby electrically connect a connection portion of the semiconductor chip and a connection portion of the substrate or the another semiconductor chip.

Disclosed is a method for manufacturing a semiconductor device which includes: a semiconductor chip; a substrate and/or another semiconductor chip; and an adhesive layer interposed therebetween. This method comprises the steps of: heating and pressuring a laminate having: the semiconductor chip; the substrate; the another semiconductor chip or a semiconductor wafer; and the adhesive layer by interposing the laminate with pressing members for temporary press-bonding to thereby temporarily press-bond the substrate and the another semiconductor chip or the semiconductor wafer to the semiconductor chip; and heating and pressuring the laminate by interposing the laminate with pressing members for main press-bonding, which are separately prepared from the pressing members for temporary press-bonding, to thereby electrically connect a connection portion of the semiconductor chip and a connection portion of the substrate or the another semiconductor chip.

A system for reflowing a semiconductor workpiece including a stage, a first vacuum module and a second vacuum module, and an energy source is provided. The stage includes a base and a protrusion connected to the base, the stage is movable along a height direction of the stage relative to the semiconductor workpiece, the protrusion operably holds and heats the semiconductor workpiece, and the protrusion includes a first portion and a second portion surrounded by and spatially separated from the first portion. The first vacuum module and the second vacuum module respectively coupled to the first portion and the second portion of the protrusion, and the first vacuum module and the second vacuum module are operable to respectively apply a pressure to the first portion and the second portion. The energy source is disposed over the stage to heat the semiconductor workpiece held by the protrusion of the stage.

A substrate bonding apparatus includes a substrate susceptor to support a first substrate, a substrate holder over the substrate susceptor to hold a second substrate, the substrate holder including a plurality of independently moveable holding fingers, and a chamber housing to accommodate the substrate susceptor and the substrate holder.