A method for manufacturing an electronic component by a pressure-assisted low-temperature sintering process, by using a pressure sintering device having an upper die and a lower die is disclosed. The upper the die and/or the lower die is provided with a first pressure pad, wherein the method includes the following steps: placing a first sinterable component on a first sintering layer provided on a top layer of a first substrate; joining the sinterable component and the top layer of the first substrate to form a first electronic component by pressing the upper die and the lower die towards each other, wherein the sintering device is simultaneously heated.

A method of manufacturing a bonded substrate stack includes: providing a first substrate having a first hybrid interface layer, the first hybrid interface layer including a first insulator and a first metal; and providing a second substrate having a second hybrid interface layer, the second hybrid interface layer including a second insulator and a second metal. The hybrid interface layers are surface-activated by particle bombardment which is configured to remove atoms of the first hybrid interface layer and atoms of the second hybrid interface layer to generate dangling bonds on the hybrid interface layers. The surface-activated hybrid interface layers are brought into contact, such that the dangling bonds of the first hybrid interface layer and the dangling bonds of the second hybrid interface layer bond together to form first insulator to second insulator bonds and first metal to second metal bonds.

A sintering press for sintering electronic components on a substrate includes at least one reaction element extending along an element axis parallel to a pressing axis of the sintering press between a first element end and a second element end, the first element end forming a support plane for a respective substrate, at least one load cell operatively connected to the second element end, and an element plate slidably supporting the at least one reaction element and equipped with a heating circuit. The reaction element has a heating portion passing through the element plate and transmitting by conduction heat of the element plate to the substrate. The reaction element has a cooling portion ending with the second element end and shaped to dissipate the heat transmitted from the element plate to the heating portion.

A sintering press for sintering electronic components on a substrate is provided. The sintering press includes a pressing unit having a plurality of controllable presser rods to apply sintering pressure to the electronic components to be sintered, reaction elements forming a support plane for a respective substrate, an element plate slidably supporting the reaction elements, and a heating circuit with heating elements embedded in a heating body placed around the element plate to bring the element plate to a sintering temperature. A heat diffusion plate is placed in contact with the heating body and extends onto the element plate between the reaction elements, the diffusion plate being made of a material having a higher thermal conductivity than the element plate.

Microelectronic die package structures formed according to some embodiments may include a thermal compression bonding (TCB) assembly including a bond head with a first thermal zone separated from a second thermal zone by a thermal separator, the thermal separator extending through a thickness of the bond head. A bond head nozzle is coupled to a first side of the bond head, where the bond head nozzle includes one or more nozzle channels extending through a thickness of the bond head nozzle.

A bonding apparatus provided with a gas supplying unit for causing an inert gas to be sprayed from a spray aperture provided adjacent to a holding section of the bonding head. The spray aperture is provided so as to surround the holding section of the bonding head, in which a portion of the slits is a wide slit set to a higher jet flow rate of the inert gas than narrow slits of another portion, and the inert gas sprayed from the wide slit and the narrow slits forms an air curtain that surrounds the bonding portion between the semiconductor chip and the substrate. The inert gas sprayed from the wide slit forms a flow that passes between the semiconductor chip and the substrate.

A semiconductor manufacturing apparatus includes a stage capable of holding thereon an interconnection substrate. A tool presses the interconnection substrate and a semiconductor chip against each other between the tool and the stage. The tool includes a main body portion that has a holding surface holding thereon the semiconductor chip. A first protruding portion is provided along an outer edge of the holding surface and protrudes from the holding surface toward the stage. A second protruding portion is provided outside of the first protruding portion along the outer edge of the holding surface and protrudes from the holding surface toward the stage. A groove portion is provided between the first protruding portion and the second protruding portion.

An apparatus comprising a bonding nozzle that has one or more channels in a bonding surface. The one or more channels comprise a first channel portion in an inner region of the bonding surface and a second channel portion along an outer periphery of the bonding surface. The one or more channels are in fluid communication with a vacuum port. A vacuum relief conduit within the bonding nozzle comprises a first opening into the second channel portion along the outer periphery of the bonding surface, and a second opening along an exterior wall of the bonding nozzle.

A bonding head for a die bonding apparatus and a die bonding apparatus including the bonding head, the bonding head including a head body; a thermal pressurizer mounted on a lower surface of the head body, the thermal pressurizer being configured to hold and heat at least one die and including a heater having a first heating surface that faces a held surface of the die; and a thermal compensator at an outer region of the die, the thermal compensator extending downwardly from the lower surface of the head body and including at least one thermal compensating block having a second heating surface that emits heat from a heating source therein and that faces a side surface of the die held on the thermal pressurizer.

A sintering press for producing a sintered connection between a first connection partner and a second connection partner disposed thereabove, having a suction-fixing installation for fixing the first connection partner, having a compression piece which is disposed above the suction-fixing installation. The sintering press for producing the sintered connection is configured for converging the compression piece and the suction-fixing installation relative to one another and for mutually compressing the first connection partner and the second connection partner, wherein the suction-fixing installation on the side thereof that faces the compression piece has first suction openings, wherein the suction-fixing installation, when the first connection partner is disposed above the first suction openings, by generating a negative pressure at the first suction openings, is configured for suctioning the first connection partner and, on account thereof, for fixing the latter in relation to the suction-fixing installation. The invention furthermore relates to a pressure sintering method for producing a sintered connection by the sintering press.