An assembly includes at least one first element comprising at least one first electrical bonding pad; at least one second element comprising at least one second electrical bonding pad; electrical and mechanical interconnect means, wherein the electrical and mechanical interconnect means comprise at least: at least one first intermediate metal interconnect element, on the surface of at least the first electrical bonding pad; at least one sintered joint of metal microparticles or nanoparticles stacked with the first intermediate metal interconnect element; the melting point of the first intermediate metal interconnect element being greater than the sintering temperature of the metal microparticles or nanoparticles. A method for fabricating an assembly is also provided.

A method of establishing conductive connections is disclosed. The method includes providing an integrated circuit die having a plurality of solder balls each of which has an oxide layer on an outer surface of the solder ball. The method also includes performing a heating process to heat at least the solder balls and applying a force causing each of a plurality of piercing bond structures on a substrate to pierce one of the solder balls and its associated oxide layer to thereby establish a conductive connection between the solder ball and the piercing bond structure.

An electronic device includes a first electronic part that includes a first terminal, a second electronic part disposed to be opposed to the first electronic part, the second electronic part that includes a second terminal including a first end part in contact with the first terminal and a second end part located on an outside of the first terminal, and an adhesive disposed between the first electronic part and the second electronic part, the adhesive maintaining the contact between the first terminal and the first end part by bonding the first electronic part and the second electronic part to each other.

An electronic device and a method for producing an electronic device are disclosed. In an embodiment the electronic device includes a first component and a second component and a sinter layer connecting the first component to the second component, the sinter layer comprising a first metal, wherein at least one of the components comprises at least one contact layer which is arranged in direct contact with the sinter layer, which comprises a second metal different from the first metal and which is free of gold.

An electronic device and a method for producing an electronic device are disclosed. In an embodiment the electronic device includes a first component and a second component and a sinter layer connecting the first component to the second component, the sinter layer comprising a first metal, wherein at least one of the components comprises at least one contact layer which is arranged in direct contact with the sinter layer, which comprises a second metal different from the first metal and which is free of gold.

A method of producing a hybridized device including two microelectronic components, including a first microelectronic component having conductive inserts on a connection surface, and a second microelectronic component having ductile conductive pads on a surface opposed to the connection surface, is provided. The method includes the steps of hybridizing the first and second electronic components face-to-face by arranging the connection surface of the first microelectronic component to oppose the surface of the second microelectronic component having the ductile conductive pads, and establishing an electro-mechanical connection between the first microelectronic component and the second microelectronic component by inserting, at ambient temperature, inserts of the first microelectronic component, provided with a second metal sub-layer, into the ductile conductive pads of the second microelectronic component.

A semiconductor device has a semiconductor die with a die bump pad. A substrate has a conductive trace with an interconnect site. A conductive bump material is deposited on the interconnect site or die bump pad. The semiconductor die is mounted over the substrate so that the bump material is disposed between the die bump pad and interconnect site. The bump material is reflowed without a solder mask around the die bump pad or interconnect site to form an interconnect structure between the die and substrate. The bump material is self-confined within the die bump pad or interconnect site. The volume of bump material is selected so that a surface tension maintains self-confinement of the bump material substantially within a footprint of the die bump pad and interconnect site. The interconnect structure can have a fusible portion and non-fusible portion.

Provided is a method of fabricating a semiconductor package. The method includes providing a package substrate including a pad, mounting a semiconductor chip with a solder ball on the package substrate to allow the solder ball to be disposed on the pad, filling a space between the package substrate and the semiconductor chip with a underfill resin including a reducing agent comprising a carboxyl group, and irradiating the semiconductor chip with a laser to bond the solder ball to the pad, wherein the bonding of the solder ball to the pad comprises changing a metal oxide layer formed on surfaces of the pad and the solder ball to a metal layer by heat generated by the laser.

An electrode of an electronic component element (1) is bonded to an electrode (5) of a substrate (4) via a bump (2) by: after applying, to the bump (2), only a first pressure which is not less than a yield stress of a bulk material of which the bump (2) is made, reducing or stopping the application of the first pressure; and while applying a given ultrasonic vibration to the bump (2), gradually applying a pressure to the bump (2) until the pressure reaches a second pressure which is not less than the yield stress of the bulk material of which the bump (2) is made.

An electrode of an electronic component element (1) is bonded to an electrode (5) of a substrate (4) via a bump (2) by: after applying, to the bump (2), only a first pressure which is not less than a yield stress of a bulk material of which the bump (2) is made, reducing or stopping the application of the first pressure; and while applying a given ultrasonic vibration to the bump (2), gradually applying a pressure to the bump (2) until the pressure reaches a second pressure which is not less than the yield stress of the bulk material of which the bump (2) is made.