A technique for fabricating bumps on a substrate is disclosed. A substrate that includes a set of pads formed on a surface thereof is prepared. A bump base is formed on each pad of the substrate. Each bump base has a tip extending outwardly from the corresponding pad. A resist layer is patterned on the substrate to have a set of holes through the resist layer. Each hole is aligned with the corresponding pad and having space configured to surround the tip of the bump base formed on the corresponding pad. The set of the holes in the resist layer is filled with conductive material to form a set of bumps on the substrate. The resist layer is stripped from the substrate with leaving the set of the bumps.

The semiconductor memory device includes: a first substrate including a peripheral circuit, first conductive contact patterns connected to the peripheral circuit, and a first upper insulating layer having grooves exposing the first conductive contact patterns; a second substrate including a memory cell array, a second upper insulating layer disposed on the memory cell array, the second upper insulating layer formed between the memory cell array and the first upper insulating layer, second conductive contact patterns protruding through the second upper insulating layer into an opening of the grooves; and conductive adhesive patterns filling the grooves to connect the second conductive contact patterns to the first conductive contact patterns.

The semiconductor memory device includes: a first substrate including a peripheral circuit, first conductive contact patterns connected to the peripheral circuit, and a first upper insulating layer having grooves exposing the first conductive contact patterns; a second substrate including a memory cell array, a second upper insulating layer disposed on the memory cell array, the second upper insulating layer formed between the memory cell array and the first upper insulating layer, second conductive contact patterns protruding through the second upper insulating layer into an opening of the grooves; and conductive adhesive patterns filling the grooves to connect the second conductive contact patterns to the first conductive contact patterns.

In various embodiments, a method for forming a bonded structure is disclosed. The method can comprise mounting a first integrated device die to a carrier. After mounting, the first integrated device die can be thinned. The method can include providing a first layer on an exposed surface of the first integrated device die. At least a portion of the first layer can be removed. A second integrated device die can be directly bonded to the first integrated device die without an intervening adhesive.

In various embodiments, a method for forming a bonded structure is disclosed. The method can comprise mounting a first integrated device die to a carrier. After mounting, the first integrated device die can be thinned. The method can include providing a first layer on an exposed surface of the first integrated device die. At least a portion of the first layer can be removed. A second integrated device die can be directly bonded to the first integrated device die without an intervening adhesive.

A fabrication method of an electronic device bonding structure includes the following steps. A first electronic component including a first conductive bonding portion is provided. A second electronic component including a second conductive bonding portion is provided. A first organic polymer layer is formed on the first conductive bonding portion. A second organic polymer layer is formed on the second conductive bonding portion. Bonding is performed on the first electronic component and the second electronic component through the first conductive bonding portion and the second conductive bonding portion, such that the first electronic component and the second electronic component are electrically connected. The first organic polymer layer and the second organic polymer layer diffuse into the first conductive bonding portion and the second conductive bonding portion after the bonding. An electronic device bonding structure is also provided.

A fabrication method of an electronic device bonding structure includes the following steps. A first electronic component including a first conductive bonding portion is provided. A second electronic component including a second conductive bonding portion is provided. A first organic polymer layer is formed on the first conductive bonding portion. A second organic polymer layer is formed on the second conductive bonding portion. Bonding is performed on the first electronic component and the second electronic component through the first conductive bonding portion and the second conductive bonding portion, such that the first electronic component and the second electronic component are electrically connected. The first organic polymer layer and the second organic polymer layer diffuse into the first conductive bonding portion and the second conductive bonding portion after the bonding. An electronic device bonding structure is also provided.

An electronic device includes a first metal plate including a first wiring and a second wiring, an electronic component mounted on a lower surface of the first wiring so as to overlap the second wiring in plan view, a second metal plate including an electrode electrically connected to the lower surface of the first wiring, and an insulation layer filling a space between the first metal plate, the second metal plate, and the electronic component and covering the electronic component. The upper surface of the second wiring is exposed from the insulation layer.

An electronic device includes a first metal plate including a first wiring and a second wiring, an electronic component mounted on a lower surface of the first wiring so as to overlap the second wiring in plan view, a second metal plate including an electrode electrically connected to the lower surface of the first wiring, and an insulation layer filling a space between the first metal plate, the second metal plate, and the electronic component and covering the electronic component. The upper surface of the second wiring is exposed from the insulation layer.

A fabrication method of an electronic device bonding structure includes the following steps. A first electronic component including a first conductive bonding portion is provided. A second electronic component including a second conductive bonding portion is provided. A first organic polymer layer is formed on the first conductive bonding portion. A second organic polymer layer is formed on the second conductive bonding portion. Bonding is performed on the first electronic component and the second electronic component through the first conductive bonding portion and the second conductive bonding portion, such that the first electronic component and the second electronic component are electrically connected. The first organic polymer layer and the second organic polymer layer diffuse into the first conductive bonding portion and the second conductive bonding portion after the bonding. An electronic device bonding structure is also provided.