A component carrier includes a stack with at least one electrically insulating layer structure and/or at least one electrically conductive layer structure, and a component having one or more pads and at least one dielectric layer on at least one main surface of the component. The at least one dielectric layer does not extend beyond the main surface in a lateral direction. The dielectric layer at least partially covers one or more pads of the component. In addition, at least one electrically conductive contact extends through at least one opening in the dielectric layer up to at least one of the pads.

Leadframes for semiconductor devices are manufactured by providing a laminar substrate of laser direct structuring material, the laminar substrate comprising first and second opposed surfaces, applying laser beam processing to the substrate to provide a first pattern of electrically-conductive formations at the first surface, a second pattern of electrically-conductive formations at the second surface and electrically-conductive vias through the substrate between the first surface and the second surface. Electrically-conductive material is formed, for instance via electrolytic or electroless growth of electrically-conductive material such a copper onto the first and second pattern of electrically-conductive formations as well as onto the electrically-conductive vias provided by applying laser beam processing to the substrate. The electrically-conductive vias are coupled to one or both of the electrically-conductive formations in the first pattern of electrically-conductive formations and the second pattern of electrically-conductive formations.

The disclosure concerns an electronic device and methods of making an electronic device. The electronic device includes a circuit that is at least partially formed in an active region of a substrate. An electronic package is stacked on the substrate. A via extends through the circuit from the active region of the substrate to a surface of the substrate that is opposite the active region. At least one contacting element connects the via to the electronic package.

The disclosure concerns an electronic device and methods of making an electronic device. The electronic device includes a circuit that is at least partially formed in an active region of a substrate. An electronic package is stacked on the substrate. A via extends through the circuit from the active region of the substrate to a surface of the substrate that is opposite the active region. At least one contacting element connects the via to the electronic package.

A semiconductor chip is mounted on a leadframe. A first portion of an insulating package for the semiconductor chip is formed from laser direct structuring (LDS) material molded onto the semiconductor chip. A conductive formation (provided by laser-drilling the LDS material and plating) extends between the outer surface of the first portion of insulating package and the semiconductor chip. An electrically conductive clip is applied onto the outer surface of the first portion of the insulating package, with the electrically conductive clip electrically coupled to the conductive formation and the leadframe. A second portion of the insulating package is made from package molding material (epoxy compound) molded onto the electrically conductive clip and applied onto the outer surface of the first portion of the insulating package.

A method of manufacturing semiconductor devices such as integrated circuits comprises: providing one or more semiconductor chips having first and second opposed surfaces, coupling the semiconductor chip or chips with a support substrate with the second surface towards the support substrate, embedding the semiconductor chip or chips coupled with the support substrate in electrically-insulating packaging material by providing in the packaging material electrically-conductive passageways. The electrically-conductive passageways comprise: electrically-conductive chip passageways towards the first surface of the at least one semiconductor chip, and/or electrically-conductive substrate passageways towards the support substrate.

A method for fabricating a semiconductor die package includes: providing a semiconductor transistor die, the semiconductor transistor die having a first contact pad on a first lower main face and/or a second contact pad on an upper main face; fabricating a frontside electrical conductor onto the second contact pad and a backside electrical conductor onto the first contact pad; and applying an encapsulant covering the semiconductor die and at least a portion of the electrical conductor, wherein the frontside electrical conductor and/or the backside electrical conductor is fabricated by laser-assisted structuring of a metallic structure.

A packaged semiconductor includes an electrically insulating encapsulant body having an upper surface, a first semiconductor die encapsulated within the encapsulant body, the first semiconductor die having a main surface with a first conductive pad that faces the upper surface of the encapsulant body, a second semiconductor die encapsulated within the encapsulant body and disposed laterally side by side with the first semiconductor die, the second semiconductor die having a main surface with a second conductive pad that faces the upper surface of the encapsulant body, and a first conductive track that is formed in the upper surface of the encapsulant body and electrically connects the first conductive pad to the second conductive pad. The encapsulant body includes a laser activatable mold compound.

A method comprises molding laser direct structuring material onto at least one semiconductor die, forming resist material on the laser direct structuring material, producing mutually aligned patterns of electrically-conductive formations in the laser direct structuring material and etched-out portions of the resist material having lateral walls sidewise of said electrically-conductive formations via laser beam energy, and forming electrically-conductive material at said etched-out portions of the resist material, the electrically-conductive material having lateral confinement surfaces at said lateral walls of said etched-out portions of the resist material.

Disclosed herein is a method, including attaching a semiconductor chip to a chip mounting portion on at least one leadframe portion, and attaching a passive component on a passive component mounting portion of the at least one leadframe portion. The method further includes forming a laser direct structuring (LDS) activatable molding material over the semiconductor chip, passive component, and the at least one leadframe portion. Desired patterns of structured areas are formed within the LDS activatable molding material by activating the LDS activatable molding material. The desired patterns of structured areas are metallized to form conductive areas within the LDS activatable molding material to thereby form electrical connection between the semiconductor chip and the passive component. A passivation layer is formed on the LDS activatable molding material.