Semiconductor dies including ultra-thin wafer backmetal systems, microelectronic devices containing such semiconductor dies, and associated fabrication methods are disclosed. In one embodiment, a method for processing a device wafer includes obtaining a device wafer having a wafer frontside and a wafer backside opposite the wafer frontside. A wafer-level gold-based ohmic bond layer, which has a first average grain size and which is predominately composed of gold, by weight, is sputter deposited onto the wafer backside. An electroplating process is utilized to deposit a wafer-level silicon ingress-resistant plated layer over the wafer-level Au-based ohmic bond layer, while imparting the plated layer with a second average grain size exceeding the first average grain size. The device wafer is singulated to separate the device wafer into a plurality of semiconductor die each having a die frontside, an Au-based ohmic bond layer, and a silicon ingress-resistant plated layer.

A flip chip bonding method includes obtaining a die including a first substrate and an adhesive layer on the first substrate; bonding the die to a second substrate different from the first substrate; and curing the adhesive layer. The curing the adhesive layer includes heating the second substrate to melt the adhesive layer, and providing the adhesive layer and the second substrate with air having pressure greater than atmospheric pressure.

Semiconductor dies including ultra-thin wafer backmetal systems, microelectronic devices containing such semiconductor dies, and associated fabrication methods are disclosed. In one embodiment, a method for processing a device wafer includes obtaining a device wafer having a wafer frontside and a wafer backside opposite the wafer frontside. A wafer-level gold-based ohmic bond layer, which has a first average grain size and which is predominately composed of gold, by weight, is sputter deposited onto the wafer backside. An electroplating process is utilized to deposit a wafer-level silicon ingress-resistant plated layer over the wafer-level Au-based ohmic bond layer, while imparting the plated layer with a second average grain size exceeding the first average grain size. The device wafer is singulated to separate the device wafer into a plurality of semiconductor die each having a die frontside, an Au-based ohmic bond layer, and a silicon ingress-resistant plated layer.

The present disclosure provides a method for bonding an electronic component and a method for manufacturing a bonded body, which are capable of sintering a silver paste at a comparatively low temperature. Disclosed is a method for bonding an electronic component using a silver paste containing silver particles, the method including: applying a silver paste containing silver particles on a surface of a substrate and setting electronic components on the silver paste applied, heating in a reducing atmosphere at a temperature of lower than 300 C., and after heating in the reducing atmosphere, heating in an oxidizing atmosphere at a temperature of 300 C. or lower.

A method of forming a bonded assembly includes providing a first semiconductor die containing a first substrate, first semiconductor devices, first dielectric material layers overlying the first semiconductor devices, and first metal interconnect structures, providing a second semiconductor die containing a second substrate, second semiconductor devices, second dielectric material layers overlying the second semiconductor devices, and second metal interconnect structures, depositing a manganese layer on a top surface of the first dielectric material layers, disposing the second semiconductor die on the manganese layer such that a surface of the second dielectric material layers contacts the manganese layer, and performing a bonding anneal to bond the first semiconductor die to the second semiconductor die and to convert the manganese layer into a manganese-containing oxide layer, such that the manganese-containing oxide layer is bonded to the first dielectric material layers and the second dielectric material layers.

A film-shaped fired material of the present invention is a film-shaped fired material 1 which contains sinterable metal particles 10 and a binder component 20, in which a time (A1) after the start of a temperature increase, at which a negative gradient is the highest, in a thermogravimetric curve (TG curve) measured from 40 C. to 600 C. at a temperature-rising-rate of 10 C./min in an air atmosphere and a maximum peak time (B1) in a time range of 0 seconds to 2160 seconds after the start of a temperature increase in a differential thermal analysis curve (DTA curve) measured from 40 C. to 600 C. at a temperature-rising-rate of 10 C./min in an air atmosphere using alumina particles as a reference sample satisfy a relationship of A1<B1<A1+200 seconds and a relationship of A1<2000 seconds.

A semiconductor device includes: a mounting member having an electrode; a conductive member facing the electrode; and a bonding member electrically and mechanically connecting the electrode and the conductive member. The bonding member is made of a sintered body in which an additive particle including a metal atom having aggregation energy higher than a silver atom is added to an silver particle.

The sinter-bonding composition contains sinterable particles containing an electroconductive metal. The average particle diameter of the sinterable particles is 2 m or less and the proportion of the particles having a particle diameter of 100 nm or less in the sinterable particles is not less than 80% by mass. The sinter-bonding sheet (10) has an adhesive layer made from such a sinter-bonding composition. The dicing tape with a sinter-bonding sheet (X) has such a sinter-bonding sheet (10) and a dicing tape (20). The dicing tape (20) has a lamination structure containing a base material (21) and an adhesive layer (22), and the sinter-bonding sheet (10) is positioned on the adhesive layer (22) of the dicing tape (20).

A method for the production of a silver sintering agent in the form of a layer-shaped silver sintering body having silver oxide surfaces and the use thereof are provided.

To provide a wound body of a sheet for sintering bonding with a base material that realizes a satisfactory operational efficiency in a process of producing a semiconductor device comprising sintering bonding portions of semiconductor chips and that also has both a satisfactory storage stability and a high storage efficiency. A wound body 1 according to the present invention has a form in which a sheet for sintering bonding with a base material X is wound around a winding core 2 into a roll shape, the sheet for sintering bonding with a base material X having a laminated structure comprising: a base material 11; and a sheet for sintering bonding 10, comprising an electrically conductive metal containing sinterable particle and a binder component.