A conductive paste contains (A) copper fine particles having an average particle diameter of 50 nm to 400 nm and a crystallite diameter of 20 nm to 50 nm, (B) copper particles having an average particle diameter of 0.8 μm to 5 μm and a ratio of a crystallite diameter to the crystallite diameter of the copper fine particles (A) of 1.0 to 2.0, and (C) a solvent.

Provided is a metal paste for joints, containing: metal particles; and linear or branched monovalent aliphatic alcohol having 1 to 20 carbon atoms, in which the metal particles include sub-micro copper particles having a volume average particle diameter of 0.12 μm to 0.8 μM.

A method of making a semiconductor including soldering a conductor to an aluminum metallization is disclosed. In one example, the method includes substituting an aluminum oxide layer on the aluminum metallization by a substitute metal oxide layer or a substitute metal alloy oxide layer. Then, substitute metal oxides in the substitute metal oxide layer or the substitute metal alloy oxide layer are at least partly reduced. The conductor is soldered to the aluminum metallization using a solder material.

A method utilized at a sintered metal layer bonding a semiconductor element and a support substrate together suppresses cracks appearing in the sintered metal layer, and damage to the semiconductor element. A semiconductor device includes a support substrate, a semiconductor element, and a sintered metal layer bonding the support substrate and the semiconductor element. The sintered metal layer has a low porosity region disposed inward of an outer edge of the semiconductor element with the sintered metal layer bonded to the semiconductor element. The region is lower in porosity than the remaining sintered metal layer, and is formed as a wall-shaped structural body having an elongated string and extending from an upper surface to a lower surface of the sintered metal layer. The low porosity region is disposed to surround a region immediately below a center of the semiconductor element along the outer edge of the semiconductor element.

Provided is a semiconductor device capable of accurately positioning a semiconductor element with respect to a metal circuit pattern or positioning an insulating substrate with respect to a base plate without using a dedicated positioning jig, thereby being able to be manufactured inexpensively and a method of manufacturing the semiconductor device. The semiconductor device includes: an insulating substrate; and a semiconductor element, wherein the insulating substrate includes an insulating layer and a metal circuit pattern provided on an upper surface of the insulating layer, the semiconductor element is solder joined to an upper surface of the metal circuit pattern, and an oxide film or a nitride film is provided in a region where the semiconductor element is not solder joined in the upper surface of the metal circuit pattern.

The semiconductor device includes: a semiconductor element including a body portion formed in a plate shape, a protection film provided at an outer periphery on one surface of the body portion, and a metal thin film provided adjacently to an inner side of the protection film on the one surface of the body portion; a metal member joined to a surface of the metal thin film on a side opposite to the body portion, by solder; and a mold resin sealing the semiconductor element and the metal member, wherein the surface of the metal thin film on the side opposite to the body portion has, on at least a part of an outer periphery thereof, a projection portion projecting from the surface of the metal thin film, and the solder is not provided on an outer peripheral side from a top of the projection portion.

A metal mask is disposed on a copper base plate. A solder paste is introduced into each of a plurality of openings in the metal mask, to thereby form a pattern of the solder paste on each of copper plates of the copper base plate. A semiconductor element and a conductive component are placed on the respective patterns of the solder pastes. A metal mask is disposed on the copper base plate. Then, a solder paste is introduced into each of a plurality of openings in the metal mask, to thereby form a pattern of the solder paste covering each of the semiconductor element and the conductive component. A large-capacity relay board is disposed so as to come into contact with a corresponding pattern of the solder paste. A power semiconductor device is completed by performing heat treatment under a temperature condition of 200° C. or higher.

A pre-soldered circuit carrier includes a carrier having a metal die attach surface, a plated solder region on the metal die attach surface, wherein a maximum thickness of the plated solder region is at most 50 μm, the plated solder region has a lower melting point than the first bond pad, and the plated solder region forms one or more intermetallic phases with the die attach surface at a soldering temperature that is above the melting point of the plated solder region.

A method of batch soldering includes: forming a soldered joint between a metal region of a first semiconductor die and a metal region of a substrate using a solder preform via a soldering process which does not apply pressure directly to the first semiconductor die, the solder preform having a maximum thickness of 30 μm and a lower melting point than the metal regions; setting a soldering temperature of the soldering process so that the solder preform melts and fully reacts with the metal region of the first semiconductor die and the metal region of the substrate to form one or more intermetallic phases throughout the entire soldered joint, each intermetallic phase having a melting point above the preform melting point and the soldering temperature; and soldering a second semiconductor die to the same or different metal region of the substrate, without applying pressure directly to the second semiconductor die.

A member for semiconductor device includes a metal portion configured to be bonded to another member by solder, and a treated coating covering a surface of the metal portion, the treated coating including a treatment agent. The treated coating vaporizes at a temperature lower than or equal to a solidus temperature of the solder.