A method includes: providing a package body including a mounting part having a chip mounting region for mounting a semiconductor chip, a side wall part having a first sealing surface continuously provided over an entire perimeter of the mounting part, surrounding the chip mounting region and provided on the mounting part, a first recess provided on the first sealing surface, and a first solder outflow prevention part continuously provided on the first sealing surface and positioned closer to the chip mounting region side than the first recess; providing a cap having a second sealing surface facing the first sealing surface; providing a ball solder made of an alloy of gold and tin as principal ingredients; placing the ball solder in the first recess; placing the cap on the ball solder; and melting once and then solidifying the ball solder to bond the first sealing surface and the second sealing surface.

A method includes: providing a package body including a mounting part having a chip mounting region for mounting a semiconductor chip, a side wall part having a first sealing surface continuously provided over an entire perimeter of the mounting part, surrounding the chip mounting region and provided on the mounting part, a first recess provided on the first sealing surface, and a first solder outflow prevention part continuously provided on the first sealing surface and positioned closer to the chip mounting region side than the first recess; providing a cap having a second sealing surface facing the first sealing surface; providing a ball solder made of an alloy of gold and tin as principal ingredients; placing the ball solder in the first recess; placing the cap on the ball solder; and melting once and then solidifying the ball solder to bond the first sealing surface and the second sealing surface.

This member connection method includes a printing step. In the printing step, a coating film-formed region in which the coating film is formed, and a coating film non-formed region in which the coating film is not formed are formed in the print pattern, and the coating film-formed region is divided into a plurality of concentric regions and a plurality of radial regions by means of a plurality of line-shaped regions provided so as to connect various points, which are separated apart from one another in the marginal part of the connection region.

This member connection method includes a printing step. In the printing step, a coating film-formed region in which the coating film is formed, and a coating film non-formed region in which the coating film is not formed are formed in the print pattern, and the coating film-formed region is divided into a plurality of concentric regions and a plurality of radial regions by means of a plurality of line-shaped regions provided so as to connect various points, which are separated apart from one another in the marginal part of the connection region.

Provided is a joint structure interposed between a semiconductor element and a substrate, the joint structure including: a Sn phase; Cu alloy particles containing P in an amount of 1 mass % or more and less than 7 mass %; and Ag particles, wherein the Cu alloy particles are each coated with a Cu.sub.6Sn.sub.5 layer, wherein the Ag particles are each coated with a Ag.sub.3Sn layer, wherein the Cu alloy particles and the Ag particles are at least partially bonded to each other through a Cu.sub.10Sn.sub.3 phase, wherein a total of addition amounts of the Cu alloy particles and the Ag particles is 25 mass % or more and less than 65 mass % with respect to the joint structure, and wherein a mass ratio of the addition amount of the Ag particles to the addition amount of the Cu alloy particles is 0.2 or more and less than 1.2.

There is provided a bonding paste capable of forming a uniform bonding layer by reducing occurrence of voids at edges even when a bonding area is large, and bonding method using the paste, and provides a metal paste for bonding containing at least metal nanoparticles (A) having a number average primary particle size of 10 to 100 nm, wherein a cumulative weight loss value (L.sub.100) when a temperature is raised from 40° C. to 100° C. is 75 or less, and a cumulative weight loss value (L.sub.150) when a temperature is raised from 40° C. to 150° C. is 90 or more, and a cumulative weight loss value (L.sub.200) when a temperature is raised from 40° C. to 200° C. is 98 or more, based on 100 cumulative weight loss value (L.sub.700) when the paste is heated from 40° C. to 700° C. at a heating rate of 3° C./min in a nitrogen atmosphere.

Process for producing an electronic subassembly by low-temperature pressure sintering, comprising the following steps: arranging an electronic component on a circuit carrier having a conductor track, connecting the electronic component to the circuit carrier by the low-temperature pressure sintering of a joining material which connects the electronic component to the circuit carrier, characterized in that, to avoid the oxidation of the electronic component or of the conductor track, the low-temperature pressure sintering is carried out in a low-oxygen atmosphere having a relative oxygen content of 0.005 to 0.3%.

A conductive paste contains (A) copper fine particles having an average particle diameter of 50 nm to 400 nm and a crystallite diameter of 20 nm to 50 nm, (B) copper particles having an average particle diameter of 0.8 μm to 5 μm and a ratio of a crystallite diameter to the crystallite diameter of the copper fine particles (A) of 1.0 to 2.0, and (C) a solvent.

Invention compositions are a replacement for high melting temperature solder pastes and preforms in high operating temperature and step-soldering applications. In the use of the invention, a mixture of metallic powders reacts below 350 degrees C. to form a dense metallic joint that does not remelt at the original process temperature.

The present invention relates to a method for exchanging heat with an object said method comprising using a heat transfer fluid wherein said heat transfer fluid comprises one or more chemical compounds having the general formula: (I) wherein: R.sub.1, R.sub.2, R.sub.3, R.sub.4 can be the same or different, linear or branched, partially fluorinated alkyl groups having a C1-C6 carbon chain.

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