Methods for bonding substrates used, for example, in substrate-level packaging, are provided herein. In some embodiments, a method for bonding substrates includes: performing electrochemical deposition (ECD) to deposit at least one material on each of a first substrate and a second substrate, performing chemical mechanical polishing (CMP) on the first substrate and the second substrate to form a bonding interface on each of the first substrate and the second substrate, positioning the first substrate on the second substrate so that the bonding interface on the first substrate aligns with the bonding interface on the second substrate, and bonding the first substrate to the second substrate using the bonding interface on the first substrate and the bonding interface on the second substrate.

A method of forming a chip assembly may include forming a plurality of cavities in a carrier; The method may further include arranging a die attach liquid in each of the cavities; arranging a plurality of chips on the die attach liquid, each chip comprising a rear side metallization and a rear side interconnect material disposed over the rear side metallization, wherein the rear side interconnect material faces the carrier; evaporating the die attach liquid; and after the evaporating the die attach liquid, fixing the plurality of chips to the carrier.

A method of forming a chip assembly may include forming a plurality of cavities in a carrier; The method may further include arranging a die attach liquid in each of the cavities; arranging a plurality of chips on the die attach liquid, each chip comprising a rear side metallization and a rear side interconnect material disposed over the rear side metallization, wherein the rear side interconnect material faces the carrier; evaporating the die attach liquid; and after the evaporating the die attach liquid, fixing the plurality of chips to the carrier.

Provided is a metal powder sintering paste having a high resistance to thermal stress. The present invention provides a metal powder sintering paste containing silver particles having an average particle diameter (median diameter) of 0.3 m to 5 m as a main component, further containing inorganic spacer particles having a CV value (standard deviation/average value) of less than 5%, and containing substantially no resin.

A bonding member (10) includes surface-processed silver surfaces (11a, 11b).

A stack type power module includes: a power semiconductor having a gate and an emitter, each of which has a pad shape, adjacent to each other on one surface of the power semiconductor, and a collector having a pad shape on another surface of the power semiconductor; an upper substrate layer stacked on an upper portion of the power semiconductor, and electrically connected to a metal layer that has a lower surface with which the collector is in contact; and a lower substrate layer stacked on a lower portion of the power semiconductor, and electrically connected to the metal layer that has an upper surface with which each of the gate and the emitter is in contact.

A method of manufacturing a semiconductor device in which a prescribed target lamination number of semiconductor chips are laminated on a substrate, the method includes: a first lamination step of laminating while temporarily bonding one or more semiconductor chips on the substrate to thereby form a first chip laminate body; a first permanent bonding step of pressurizing while heating from the upper side of the first chip laminate body to thereby collectively and permanently bond the one or more semiconductor chips; a second lamination step of sequentially laminating while temporarily bonding two or more semiconductor chips on the permanently bonded semiconductor chips to thereby form a second chip laminate body; and a second permanent bonding step of pressurizing while heating from the upper side of the second chip laminate body to thereby collectively permanently bond the two or more semiconductor chips.

Discloses is a method of bonding a semiconductor device, for example, a sintering bonding method for a semiconductor device that can mix pure particles and copper (I) oxide nano particles on a metal substrate. The paste of the present invention may provide low-cost copper paste increasing a copper density as a bonding material when bonding a semiconductor chip continuously used at a high temperature. The copper paste of the present invention may suppress the occurrence of pores or cracks when sintering by heating the copper paste under the reduction atmosphere as saving material costs and implementing an optimum high heat-resistance bonding.

A method may include the steps of directly bonding a semiconductor device having a substrate to an element; and removing a portion of the substrate to expose a remaining portion of the semiconductor device after bonding. The element may include one of a substrate used for thermal spreading, impedance matching or for RF isolation, an antenna, and a matching network comprised of passive elements. A second thermal spreading substrate may be bonded to the remaining portion of the semiconductor device. Interconnections may be made through the first or second substrates. The method may also include bonding a plurality of semiconductor devices to an element, and the element may have recesses in which the semiconductor devices are disposed.

A semiconductor device includes a semiconductor element, a mount portion, and a sintered metal bond. The semiconductor element includes a body and an electrode pad. The body has an obverse surface facing forward in a first direction and a reverse surface facing rearward in the first direction. The electrode pad covers the element reverse surface. The mount portion supports the semiconductor element. The sintered metal bond electrically bonds the electrode pad and the mount portion. The sintered metal bond includes a first rear edge and a first front edge spaced forward in the first direction from the first rear edge. The electrode pad includes a second rear edge and a second front edge spaced forward in the first direction from the second rear edge. The first front edge of the metal bond is spaced rearward in the first direction from the second front edge of the pad.