A semiconductor structure and a method of forming the same are provided. In an embodiment, a semiconductor structure includes a source feature and a drain feature, a channel structure disposed between the source feature and the drain feature, a semiconductor layer disposed over the channel structure and the drain feature, a dielectric layer disposed over the semiconductor layer, a backside source contact over the source feature and extending through the semiconductor layer and the dielectric layer, and a backside power rail disposed over the dielectric layer and in contact with the backside source contact.

A semiconductor structure and a method of forming the same are provided. In an embodiment, a semiconductor structure includes a source feature and a drain feature, a channel structure disposed between the source feature and the drain feature, a semiconductor layer disposed over the channel structure and the drain feature, a dielectric layer disposed over the semiconductor layer, a backside source contact over the source feature and extending through the semiconductor layer and the dielectric layer, and a backside power rail disposed over the dielectric layer and in contact with the backside source contact.

The invention is directed towards enhanced systems and methods for employing a pulsed photon (or EM energy) source, such as but not limited to a laser, to electrically couple, bond, and/or affix the electrical contacts of a semiconductor device to the electrical contacts of another semiconductor devices. Full or partial rows of LEDs are electrically coupled, bonded, and/or affixed to a backplane of a display device. The LEDs may be μLEDs. The pulsed photon source is employed to irradiate the LEDs with scanning photon pulses. The EM radiation is absorbed by either the surfaces, bulk, substrate, the electrical contacts of the LED, and/or electrical contacts of the backplane to generate thermal energy that induces the bonding between the electrical contacts of the LEDs' electrical contacts and backplane's electrical contacts. The temporal and spatial profiles of the photon pulses, as well as a pulsing frequency and a scanning frequency of the photon source, are selected to control for adverse thermal effects.

A bonded structure includes a first substrate; a second substrate placed opposite to the first substrate; an intermediate layer provided between the first substrate and the second substrate and including a first oxide thin film layered on the first substrate and a second oxide thin film layered on the second substrate; either or both of the first oxide thin film and the second oxide thin film of the intermediate layer being formed of oxide thin films having increased defects; and an interface between the first oxide thin film and the second oxide thin film=being bonded by chemical bonding, and the interface comprising a low-density portion whose density is lower than that of the two oxide thin films.

A bonded structure includes a first substrate; a second substrate placed opposite to the first substrate; an intermediate layer provided between the first substrate and the second substrate and including a first oxide thin film layered on the first substrate and a second oxide thin film layered on the second substrate; either or both of the first oxide thin film and the second oxide thin film of the intermediate layer being formed of oxide thin films having increased defects; and an interface between the first oxide thin film and the second oxide thin film=being bonded by chemical bonding, and the interface comprising a low-density portion whose density is lower than that of the two oxide thin films.

A semiconductor structure and a method of forming the same are provided. In an embodiment, a semiconductor structure includes a source feature and a drain feature, a channel structure disposed between the source feature and the drain feature, a semiconductor layer disposed over the channel structure and the drain feature, a dielectric layer disposed over the semiconductor layer, a backside source contact over the source feature and extending through the semiconductor layer and the dielectric layer, and a backside power rail disposed over the dielectric layer and in contact with the backside source contact.

A method for producing a semiconductor component and workpiece are disclosed. In an embodiment a method includes forming a first semiconductor layer over a growth substrate, wherein a material of the first semiconductor layer is In.sub.x1Al.sub.y1Ga.sub.(1-x1-y1)N, with 0≤xl≤1, 0≤yl≤1, applying a first modification substrate over the first semiconductor layer, wherein a material of the first modification substrate has a thermal expansion coefficient which is different from that of the first semiconductor layer, removing the growth substrate thereby obtaining a first layer stack, heating the first layer stack to a first growth temperature and growing a second semiconductor layer over a growth surface of the first semiconductor layer after heating the first layer stack, wherein due to heating a lattice constant of the first semiconductor layer is adapted to a lattice constant of the second semiconductor layer.

A method of forming a semiconductor device includes providing a semiconductor substrate with a circuit layer, forming a range compensating layer over the semiconductor substrate, the range compensating layer having a plurality of different thicknesses, each of the plurality of different thicknesses being inversely proportional to a stopping power of structures disposed under the respective thickness of the range compensating layer, implanting ions into the semiconductor substrate, the ions traveling through the range compensating layer and the circuit layer to define a cleave plane in the semiconductor substrate, removing the range compensating layer, and cleaving the semiconductor substrate at the cleave plane. The range compensating layer can be used to compensate for variations in ion penetration depth.

A semiconductor element bonding structure capable of strongly bonding a semiconductor element and an object to be bonded and relaxing thermal stress caused by a difference in thermal expansion, by interposing metal particles and Ni between the semiconductor element and the object to be bonded, the metal particles having a lower hardness than Ni and having a micro-sized particle diameter. A plurality of metal particles 5 (aluminum (Al), for example) having a lower hardness than nickel (Ni) and having a micro-sized particle diameter are interposed between a semiconductor chip 3 and a substrate 2 to be bonded to the semiconductor chip 3, and the metal particles 5 are fixedly bonded by the nickel (Ni). Optionally, aluminum (Al) or an aluminum alloy (Al alloy) is used as the metal particles 5, and aluminum (Al) or an aluminum alloy (Al alloy) is used on the surface of the semiconductor chip 3 and/or the surface of the substrate 2.

Implanting ions to form a cleave layer in a semiconductor device causes damage to sensitive materials such as high-K dielectrics. In a process for forming a cleave layer and repairing damage caused by ion implantation, ions are implanted through a circuit layer of a substrate to form a cleave plane. The substrate is exposed to a hydrogen gas mixture for a first time at a first temperature to repair damage caused by the implanted ions. A cleaving process may then be performed, and the cleaved substrate may be stacked in a 3DIC structure.