Patent classifications
H01L2224/8313
Semiconductor manufacturing apparatus having a pickup unit simultaneously picking up a plurality of semiconductor chips
A semiconductor manufacturing apparatus comprises a stage connected to a vacuum generator to suction a semiconductor wafer including a plurality of semiconductor chips, a suction control unit connected to a connecting portion of the stage and the vacuum generator to control the connection of the stage and the vacuum generator, a pickup unit connected to a movement control unit simultaneously picking up the plurality of semiconductor chips, and a control unit controlling movement and rotation of the pickup unit and controlling the suction control unit, the control unit is connected to the movement control unit. The pickup unit converts an interval of the plurality of semiconductor chips to a predetermined pitch and holds the pitch. The pickup unit moves the plurality of semiconductor chips from the stage to mounting positions of a supporting substrate and simultaneously adheres the plurality of semiconductor chips at the mounting positions by the control unit.
BONDING APPARATUS AND BONDING METHOD USING THE SAME
Provided is a bonding apparatus. The bonding apparatus includes a first stage on which a display panel including a first mark is disposed, a pressing part disposed above the first stage and configured to provide a data driver including a second mark on the display panel, and an alignment camera disposed below the first stage. When the data driver is provided on the display panel such that the data driver and the display panel are connected to each other, the alignment camera is configured to capture images of the first mark and the second mark at a same temporal instance.
Semiconductor device with integrated decoupling and alignment features
The present application discloses a semiconductor device with integrated decoupling alignment features. The semiconductor device includes a first wafer comprising a first substrate having a dielectric stack, a decoupling feature positioned in the dielectric stack under one of the plurality of first alignment marks, a plurality of first alignment marks positioned on the first substrate and parallel to each other; and a second wafer positioned on the first wafer and comprising a plurality of second alignment marks positioned above the plurality of first alignment marks. The plurality of second alignment marks are arranged parallel to the plurality of first alignment marks and adjacent to the plurality of first alignment marks in a top-view perspective. The plurality of first alignment marks and the plurality of second alignment marks comprise a fluorescence material. The decoupling feature has a bottle-shaped cross-sectional profile, and the decoupling feature comprises a porous low-k material.
ADHESIVE BONDING COMPOSITION AND ELECTRONIC COMPONENTS PREPARED FROM THE SAME
A curable resin or adhesive composition includes at least one monomer, a photoinitiator capable of initiating polymerization of the monomer when exposed to light, and at least one energy converting material, preferably a phosphor, capable of producing light when exposed to radiation (typically X-rays). The material is particularly suitable for bonding components at ambient temperature in situations where the bond joint is not accessible to an external light source. An associated method includes: placing a polymerizable adhesive composition, including a photoinitiator and energy converting material, such as a down-converting phosphor, in contact with at least two components to be bonded to form an assembly; and, irradiating the assembly with radiation at a first wavelength, capable of conversion (down-conversion by the phosphor) to a second wavelength capable of activating the photoinitiator, to prepare items such as inkjet cartridges, wafer-to-wafer assemblies, semiconductors, integrated circuits, and the like.
INTEGRATED CIRCUIT PACKAGES
In an embodiment, a device includes: a bottom integrated circuit die having a first front side and a first back side; a top integrated circuit die having a second front side and a second back side, the second back side being bonded to the first front side, the top integrated circuit die being free from through substrate vias (TSVs); a dielectric layer surrounding the top integrated circuit die, the dielectric layer being disposed on the first front side, the dielectric layer and the bottom integrated circuit die being laterally coterminous; and a through via extending through the dielectric layer, the through via being electrically coupled to the bottom integrated circuit die, surfaces of the through via, the dielectric layer, and the top integrated circuit die being planar.
Systems and methods for aligning and coupling semiconductor structures
In a system for aligning at least two semiconductor structures for coupling, an alignment device includes a mounting structure having at least first and second opposing portions. The alignment device also includes a first mounting portion movably coupled to the first portion of the mounting structure, the first mounting portion configured to couple to a first surface of a first semiconductor structure. The alignment device additionally includes a second mounting portion movably coupled to the second portion of the mounting structure, the second mounting portion configured to couple to a second surface of a second semiconductor structure. The alignment device further includes one or more imaging devices disposed above at least one of the first and second mounting portions of the alignment device, the imaging devices configured to capture and/or or detect alignment marks in at least the first semiconductor structure. A corresponding method for aligning two or more semiconductor structures for coupling is also provided.
METHOD OF SEMICONDUCTOR WAFER BONDING AND SYSTEM THEREOF
A method of semiconductor wafer bonding and system thereof are proposed. A first alignment mark of a first semiconductor wafer is aligned with a second alignment mark of a second semiconductor wafer. A partial attachment is performed between the first semiconductor wafer and the second semiconductor wafer. A scanning is performed along a direction substantially parallel to a surface of the first semiconductor wafer. It is determined if a bonding defect of the partially attached first semiconductor wafer and the second semiconductor wafer exists.
Connection body
Even in case of conductive particles being clamped between stepped sections of substrate electrodes and electrode terminals, conductive particles sandwiched between each main surface of the substrate electrodes and electrode terminals are sufficiently compressed, ensuring electrical conduction. An electronic component is connected to a circuit substrate via an anisotropic conductive adhesive agent, on respective edge-side areas of substrate electrodes of the circuit substrate and electrode terminals of the electronic component, stepped sections are formed and abutted, conductive particles are sandwiched between each main surface and stepped sections of the substrate electrodes and electrode terminals; the conductive particles and stepped sections satisfy formula, a+b+c0.8 D (1), wherein a is height of the stepped section of the electrode terminals, b is height of the stepped section of the substrate electrodes, c is gap distance between each stepped sections and D is diameter of conductive particles.
Connection body
Even in case of conductive particles being clamped between stepped sections of substrate electrodes and electrode terminals, conductive particles sandwiched between each main surface of the substrate electrodes and electrode terminals are sufficiently compressed, ensuring electrical conduction. An electronic component is connected to a circuit substrate via an anisotropic conductive adhesive agent, on respective edge-side areas of substrate electrodes of the circuit substrate and electrode terminals of the electronic component, stepped sections are formed and abutted, conductive particles are sandwiched between each main surface and stepped sections of the substrate electrodes and electrode terminals; the conductive particles and stepped sections satisfy formula, a+b+c0.8 D (1), wherein a is height of the stepped section of the electrode terminals, b is height of the stepped section of the substrate electrodes, c is gap distance between each stepped sections and D is diameter of conductive particles.
Mounting device and mounting method
A mounting device and a mounting method is provided with which, after lowering a mounting head holding a chip component in a direction perpendicular to a substrate to bring the chip component into close contact with the substrate subsequent to positioning the chip component and the substrate, a control unit causes a recognition mechanism to start a parallel recognition operation of a chip recognition mark and a substrate recognition mark and recognize the chip recognition mark and the substrate recognition mark through the mounting head in a mounted state in which the chip component is in close contact with the substrate, and calculates mounting position accuracy of the chip component and the substrate.