Patent classifications
H01L2224/8313
Substrate with built-in component
A substrate with built-in component includes: a first wiring layer having at least one reference pattern; a first insulating layer formed on the first wiring layer; and an electronic component mounted, in a cavity formed in the first insulating layer, on the first wiring layer, wherein the at least one reference pattern includes at least one first portion crossing a side surface of the electronic component in plan view, and at least one second portion crossing a side surface of the cavity in plan view.
Substrate bonding apparatus, substrate pairing apparatus, and semiconductor device manufacturing method
According to one embodiment, a controller is configured to calculate a matching rate of grid shapes between each semiconductor wafer of a first semiconductor wafer group and each semiconductor wafer of a second semiconductor wafer group, and generate pairing information, into which combinations of semiconductor wafers used in calculation of matching rates are registered when the matching rates fall within a predetermined range. Further, the controller is configured to select a first semiconductor wafer to be held by a first semiconductor wafer holder from the first semiconductor wafer group, and select a second semiconductor wafer from semiconductor wafers of the second semiconductor wafer group, which are paired with the first semiconductor wafer, with reference to the pairing information.
COMPONENT MOUNTING SYSTEM AND COMPONENT MOUNTING METHOD
This chip mounting system simultaneously images an alignment mark disposed on a substrate (WT) and an alignment mark disposed on a chip (CP), with the alignment marks disposed on the substrate (WT) and the chip (CP) being separated by a first distance at which the alignment marks fall within a depth-of-field range of imaging devices (35a, 35b). The chip mounting system calculates a relative positional deviation amount between the substrate (WT) and the chip (CP) from the imaged images of the alignment marks imaged by the imaging devices (35a, 35b) and, based on the calculated positional deviation amount, relatively moves the chip (CP) with respect to the substrate (WT) in a direction in which the positional deviation amount therebetween decreases.
Array substrate and chip bonding method
The invention provides an array substrate and chip bonding method, the array substrate comprising: an active area, and a bonding area located around the active area, wherein the bonding area is provided with an input terminal group, a first output terminal group and a second output terminal a group; the first output terminal group is located at a side of the input terminal group away from the active area, and the second output terminal group is located between the first output terminal group and the input terminal group; when bonding chips, the first output terminal group or the second output terminal group is selected to cooperate with the input terminal group for chip bonding according to the chip type. By simultaneously providing the first and second output terminal groups, the bonding of the second type chip increases the distance between the chip and the edge of the array substrate.
DISPLAY DEVICE AND METHOD FOR MANUFACTURING DISPLAY DEVICE
According to one embodiment, a display device includes a display panel including a first substrate, and a wiring board mounted on a mounting portion of the first substrate. The display panel includes a first terminal and a second terminal located in the mounting portion, a first alignment mark located in the mounting portion and located between the first terminal and the second terminal, a first wiring line connected to the first terminal, and a second wiring line connected to the second terminal. The wiring board includes a first connection wiring line connected to the first terminal, a second connection wiring line connected to the second terminal, and a second alignment mark located between the first connection wiring line and the second connection wiring line.
Semiconductor package including cap layer and dam structure and method of manufacturing the same
A semiconductor package and a method of manufacturing the same are provided. The semiconductor package includes a semiconductor die, a cap layer, a conductive terminal, and a dam structure. The semiconductor die has a first surface. The cap layer is over the semiconductor die and has a second surface facing the first surface of the semiconductor die. The conductive terminal penetrates the cap layer and electrically connects to the semiconductor die. The dam structure is between the semiconductor die and the cap layer and surrounds a portion of the conductive terminal between the first surface and the second surface, thereby forming a gap between the cap layer and the semiconductor die.
BONDING APPARATUS AND METHOD OF FABRICATING DISPLAY DEVICE USING THE SAME
A method of fabricating a display device may include disposing a display panel on a stage to be parallel to an XZ-plane defined by a horizontal X-axis and a vertical Z-axis, measuring a height of a first side surface of the display panel in a direction of the Z-axis, rotating the stage such that the first side surface is parallel to a reference horizontal line in case that a result of the measured height indicates that the first side surface includes an inclined surface, moving the display panel in a direction of the Z-axis such that a first pad disposed on the first side surface overlaps the reference horizontal line, and bonding a second pad of a printed circuit board with the first pad.
Multilevel semiconductor device and structure with image sensors
An integrated device, the device including: a first level including a first mono-crystal layer, the first mono-crystal layer including a plurality of single crystal transistors; an overlaying oxide on top of the first level; a second level including a second mono-crystal layer, the second level overlaying the oxide, where the second mono-crystal layer includes a plurality of first image sensors and alignment marks; and a third level overlaying the second level, where the third level includes a plurality of second image sensors, where the third level is aligned to the alignment marks, where the second level is bonded to the first level, and where the bonded includes an oxide to oxide bond.
Alignment method, method for connecting electronic component, method for manufacturing connection body, connection body and anisotropic conductive film
An alignment mark at a position that overlaps an area in which an anisotropic conductive film is pasted, and to accurately perform alignment using an image captured by a camera. An alignment method in which an electronic component is mounted on the obverse surface of a transparent substrate with a conductive adhesive agent interposed therebetween, a substrate-side alignment mark and a component-side alignment mark are adjusted from the captured image, and the position at which the electronic component is mounted on the transparent substrate is aligned, wherein in the conductive adhesive agent, conductive particles are in a regular arrangement as viewed from a planar perspective, and in the captured image, the outside edges of the alignment marks exposed between the conductive particles are intermittently visible as line segments (S) along the imaginary line segments of the outside edges of the alignment mark.
Semiconductor component, package structure and manufacturing method thereof
A package manufacturing having a semiconductor substrate, a bonding layer, at least one semiconductor device, a redistribution circuit structure and an insulating encapsulation. The bonding layer is disposed on the semiconductor substrate. The semiconductor device is disposed on and in contact with a portion of the bonding layer, wherein the bonding layer is located between the semiconductor substrate and the semiconductor device and adheres the semiconductor device onto the semiconductor substrate. The redistribution circuit structure is disposed on and electrically connected to the semiconductor device, wherein the semiconductor device is located between the redistribution circuit structure and the bonding layer. The insulating encapsulation wraps a sidewall of the semiconductor device, wherein a sidewall of the bonding layer is aligned with a sidewall of the insulating encapsulation and a sidewall of the redistribution circuit structure.