A curable resin or adhesive composition includes at least one monomer, a photoinitiator capable of initiating polymerization of the monomer when exposed to light, and at least one energy converting material, preferably a phosphor, capable of producing light when exposed to radiation (typically X-rays). The material is particularly suitable for bonding components at ambient temperature in situations where the bond joint is not accessible to an external light source. An associated method includes: placing a polymerizable adhesive composition, including a photoinitiator and energy converting material, such as a down-converting phosphor, in contact with at least two components to be bonded to form an assembly; and, irradiating the assembly with radiation at a first wavelength, capable of conversion (down-conversion by the phosphor) to a second wavelength capable of activating the photoinitiator, to prepare items such as inkjet cartridges, wafer-to-wafer assemblies, semiconductors, integrated circuits, and the like.

A method for the transfer of components from a sender substrate to a receiver substrate includes provision and/or production of the components on the sender substrate, transfer of the components of the sender substrate to the transfer substrate, and transfer of the components from the transfer substrate to the receiver substrate.The components can be transferred selectively by means of bonding means and/or debonding means.

Embodiments of the present disclosure include method for sequentially mounting multiple semiconductor devices onto a substrate having a composite metal structure on both the semiconductor devices and the substrate for improved process tolerance and reduced device distances without thermal interference. The mounting process causes “selective” intermixing between the metal layers on the devices and the substrate and increases the melting point of the resulting alloy materials.

A method and an apparatus for bonding semiconductor substrates are provided. The method includes at least the following steps. A first position of a first semiconductor substrate on a first support is gauged by a gauging component embedded in the first support and a first sensor facing towards the gauging component. A second semiconductor substrate is transferred to a position above the first semiconductor substrate by a second support. A second position of the second semiconductor substrate is gauged by a second sensor mounted on the second support and located above the first support. The first semiconductor substrate is positioned based on the second position of the second semiconductor substrate. The second semiconductor substrate is bonded to the first semiconductor substrate.

A mounting device comprises a substrate stage, a mounting head, an elevating unit, a recognition mechanism, and a control unit. The recognition mechanism acquires position information about a chip recognition mark and a substrate recognition mark using an imaging unit. The control unit calculates an amount of positional deviation between a chip component and a substrate from the position information about the chip recognition mark and the substrate recognition mark, and performs alignment by driving the mounting head and/or the substrate stage according to the amount of the positional deviation. The chip component and the substrate are brought closer with each other and the alignment is performed in a state in which the imaging unit simultaneously images the chip recognition mark and the substrate recognition mark within a depth of field, after which the chip component and the substrate are brought into close contact with each other.

A semiconductor package structure and a method for manufacturing a semiconductor package structure are provided. The semiconductor package structure includes a first passivation layer, a first metal layer and a first semiconductor die. The first metal layer is embedded in the first passivation layer. The first metal layer defines a first through-hole. The first semiconductor die is disposed on the first passivation layer.

A die attach system is provided. The die attach system includes a verification substrate configured to receive a plurality of die, the verification substrate including a plurality of substrate reference markers. The die attach system also includes an imaging system for determining an alignment of the plurality of die with the verification substrate by imaging each of the plurality of die with respective ones of the plurality of substrate reference markers.

This invention relates to the process of correcting misalignment and filling voids after a microdevice transfer process. The process involves transfer heads, measurement of offset and misalignment in horizontal, vertical, and rotational errors. An execution of the new offset vector for the next transfer corrects the alignment.

Packaging method for forming the panel-level chip device is provided. The panel-level chip device includes a plurality of first bare chips disposed on a supporting base, and a plurality of first connection pillars. The panel-level chip device also includes a first encapsulation layer, and a first redistribution layer. The first redistribution layer includes a plurality of first redistribution elements and a plurality of second redistribution elements. Further, the panel-level chip device includes a solder ball group including a plurality of first solder balls. First connection pillars having a same electrical signal are electrically connected to each other by a first redistribution element. Each of remaining first connection pillars is electrically connected to one second redistribution element. The one second redistribution element is further electrically connected to a first solder ball of the plurality of first solder balls.

The purpose of the present invention is to provide an adhesive composition which allows an alignment mark to be recognized, ensures sufficient solder wettability of a joining section, and is excellent in suppression of void generation. The adhesive composition includes: a high-molecular compound (A); an epoxy compound (B) having a weight average molecular weight of 100 or more and 3,000 or less; and a flux (C); and inorganic particles (D) which have on the surfaces thereof an alkoxysilane having a phenyl group and which have an average, particle diameter of 30 to 200 nm, the flux (C) containing an acid-modified rosin.