A die bond head apparatus has a die bond head body coupled to a die bond head motion table, a die holder motion table mounted on the die bond head body and a die holder which is operative in use to secure a semiconductor die to a substrate. The die holder is positionable by the die holder motion table independently of the die bond head motion table.

According to one embodiment, there is provided a substrate bonding apparatus including a first chucking stage, a second chucking stage, and an alignment unit. The first chucking stage is configured to chuck a first substrate. The second chucking stage is disposed facing the first chucking stage. The second chucking stage is configured to chuck a second substrate. The alignment unit is configured to be inserted between the first chucking stage and the second chucking stage. The alignment unit includes a base body, a first detection element, and a second detection element. The base body includes a first main face and a second main face opposite to the first main face. The first detection element is disposed on the first main face. The second detection element is disposed on the second main face.

A method of fabricating a semiconductor chip includes the following steps. A bonding material layer is formed on a first wafer substrate and is patterned to form a first bonding layer having a strength adjustment pattern. A semiconductor component layer and a first interconnect structure layer are formed on a second wafer substrate. The first interconnect structure layer is located. A second bonding layer is formed on the first interconnect structure layer. The second wafer substrate is bonded to the first wafer substrate by contacting the second bonding layer with the first bonding layer. A bonding interface of the second bonding layer and the first bonding layer is smaller than an area of the second bonding layer. A second interconnect structure layer is formed on the semiconductor component layer. A conductor terminal is formed on the second interconnect structure layer.

A method of fabricating a display device may include disposing a display panel on a stage to be parallel to an XZ-plane defined by a horizontal X-axis and a vertical Z-axis, measuring a height of a first side surface of the display panel in a direction of the Z-axis, rotating the stage such that the first side surface is parallel to a reference horizontal line in case that a result of the measured height indicates that the first side surface includes an inclined surface, moving the display panel in a direction of the Z-axis such that a first pad disposed on the first side surface overlaps the reference horizontal line, and bonding a second pad of a printed circuit board with the first pad.

A semiconductor device includes an encapsulant including a first hollow region, a sensing die in the first hollow region of the encapsulant, and a redistribution structure disposed on the encapsulant and the sensing die and electrically coupled to the sensing die. A top width of the hollow region is greater than a bottom width of the hollow region. The redistribution structure includes a second hollow region which exposes a sensing area of the sensing die, and the redistribution structure is slanted downward from an edge of the device toward the sensing area.

A method of fabricating a semiconductor chip includes the following steps. A bonding material layer is formed on a first wafer substrate and is patterned to form a first bonding layer having a strength adjustment pattern. A semiconductor component layer and a first interconnect structure layer are formed on a second wafer substrate. The first interconnect structure layer is located. A second bonding layer is formed on the first interconnect structure layer. The second wafer substrate is bonded to the first wafer substrate by contacting the second bonding layer with the first bonding layer. A bonding interface of the second bonding layer and the first bonding layer is smaller than an area of the second bonding layer. A second interconnect structure layer is formed on the semiconductor component layer. A conductor terminal is formed on the second interconnect structure layer.

A semiconductor package includes a semiconductor die including a semiconductor substrate, a strain-sensitive component located within or over a metallization layer of the semiconductor die, wherein a parameter of the strain-sensitive component exhibits a longitudinal shift due to a longitudinal strain and a transverse shift due to a transverse strain, and a mold compound covering the semiconductor die and the strain-sensitive component. The semiconductor package, including the semiconductor die and the mold compound, defines an orthogonal package-induced strain ratio on the strain-sensitive component on the semiconductor die surface. The strain-sensitive component is located such that the longitudinal shift due to package-induced strains offsets the transverse shift due to the package-induced strains.

A semiconductor package includes a substrate including an antenna; a heating element disposed on a first surface of the substrate and connected to the antenna; a heat radiating part coupled to the heating element; and a signal transfer part disposed on the first surface of the substrate and configured to electrically connect the substrate to a main substrate. The heat radiating part may include a heat transfer part connected to the heating element and heat radiating terminals connecting the heat transfer part and the main substrate to each other.

Provided is an assembly jig set of semiconductor module having a plurality of semiconductor chips, the assembly jig set comprising: a first outer frame jig; and a plurality of inner piece jigs positioned by the first outer frame jig and each having a sectioned shape corresponding to the first outer frame jig, wherein one of the inner piece jigs has a plurality of opening portions for positioning the semiconductor chips. A manufacturing method of a semiconductor module using an assembly jig set is provided.

A bonding apparatus includes a first holder configured to hold a first substrate divided into multiple chips with a tape and a ring frame therebetween, the first substrate being attached to the tape, and an edge of the tape being attached to the ring frame; a second holder configured to hold a second substrate, which is disposed on an opposite side to the tape with respect to the first substrate therebetween, while maintaining a distance from the first substrate; and a pressing device configured to press the multiple chips one by one with the tape therebetween to press and bond the corresponding chip to the second substrate.