A method for producing a material-bonding connection between a semiconductor chip and a metal layer is disclosed. For this purpose, a semiconductor chip, a metal layer, which has a chip mounting portion, and also a bonding medium containing a metal powder are provided. The metal powder is sintered in a sintering process. In this case, throughout a prescribed sintering time, the prescribed requirements are met, that the bonding medium is arranged between the semiconductor chip and the metal layer and extends right through from the semiconductor chip to the metal layer, that the semiconductor chip and the metal layer are pressed against one another in a pressing-pressure range that lies above a minimum pressing pressure, that the bonding medium is kept in a temperature range that lies above a minimum temperature and that a sound signal is introduced into the bonding medium.

Provided is a pressure applying unit used in baking a metal particle paste of an assembled body formed by arranging an electronic part on a substrate with the metal particle paste interposed therebetween by heating the assembled body while applying pressure to the assembled body using a pair of heating parts. The pressure applying unit includes: a pair of transferring members which transfers pressure and heat to the assembled body by sandwiching the assembled body therebetween; guide members which movably connect the pair of transferring members to each other; and a distance adjusting mechanism being configured to make the second transferring member separated from the assembled body during a pressure non-applying time and brings both the first transferring member and the second transferring member into contact with the assembled body during a pressure applying time.

Provided is transferring members having a plate-like shape used in baking a metal particle paste of an assembled body formed by arranging an electronic part on a substrate with the metal particle paste interposed therebetween by applying pressure to the assembled body and by heating the assembled body, the transferring members being configured to sandwich the assembled body in baking the metal particle paste, wherein the transferring members are made of a material having thermal conductivity which falls within a range of from 1 to 200 W/(m k) and Vickers hardness which falls within a range of from 180 to 2300 kgf/mm.sup.2.

With such a configuration, it is possible to provide a transferring member for being used in a method of manufacturing a bonded body which can suppress the lowering of bonding property between a substrate and an electronic part and which can prevent the remarkable lowering of productivity of a bonded body.

According to various embodiments, a chip carrier may include: a chip supporting region configured to support a chip; a chip contacting region including at least one contact pad for electrically contacting the chip; wherein the chip carrier is thinned in the chip contacting region such that a first thickness of the chip carrier at the at least one contact pad is smaller than a second thickness of the chip carrier in the chip supporting region.

An ultra-small LED chip rework apparatus using a transfer technique according to the present invention is characterized by including a detach press head in a stick-shaped configuration with a second adhesive layer stronger than a first adhesive layer at the lower end and capable of transferring a defective ultra-small LED chip attached to the first adhesive layer to the second adhesive layer by applying pressure to the upper surface of the defective ultra-small LED chip, and a driving unit that moves the detach press head on the substrate in the X, Y, and Z-axis directions.

In a method for producing a semiconductor assembly, a first power contact of a semiconductor element is materially bonded to a first metallization of a substrate, and a second power contact of the semiconductor element is materially bonded to a molded metal body, with the second power contact being arranged on a face of the semiconductor element facing away from the substrate. A metallic contacting element is contacted directly in a planar manner on the molded metal body for contacting the metallic contacting element to the second power contact via the molded metal body. The metallic contacting element is pressed against the semiconductor element via a dielectric pressing element, with a force acting perpendicularly on the semiconductor element being transferred via the dielectric pressing element.