A microscale selective laser sintering (-SLS) that improves the minimum feature-size resolution of metal additively manufactured parts by up to two orders of magnitude, while still maintaining the throughput of traditional additive manufacturing processes. The microscale selective laser sintering includes, in some embodiments, ultra-fast lasers, a micro-mirror based optical system, nanoscale powders, and a precision spreader mechanism. The micro-SLS system is capable of achieving build rates of at least 1 cm.sup.3/hr while achieving a feature-size resolution of approximately 1 m. In some embodiments, the exemplified systems and methods facilitate a direct write, microscale selective laser sintering -SLS system that is configured to write 3D metal structures having features sizes down to approximately 1 m scale on rigid or flexible substrates. The exemplified systems and methods may operate on a variety of material including, for example, polymers, dielectrics, semiconductors, and metals.

A lighting component including a plurality of die transferred to the glass substrate. The transfer occurs by positioning the glass substrate to face a first surface of a die carrier carrying multiple die. A reciprocating transfer member thrusts against a second surface of the die carrier to actuate the transfer member thereby causing a localized deflection of the die carrier in a direction of the surface of the glass substrate to position an initial die proximate to the glass substrate. The initial die transfers directly to a circuit trace on the glass substrate. At least one of the die carrier or the transfer member is then shifted such that the transfer member aligns with a subsequent die on the first surface of the die carrier. The acts of actuating, transferring, and shifting are repeated to effectuate a transfer of the multiple die onto the glass substrate.

The present disclosure relates to a method for curing a heat-curable material (1) in an embedded curing zone (2) and an assembly resulting from such method. The method comprises providing a heat-conducting strip (3) partially arranged between a component (9) and a substrate (10) that form the embedded curing zone (2) therein between. The heat-conducting strip (3) extends from the embedded curing zone (2) to a radiation-accessible zone (7) that is distanced from the embedded curing zone (2) and at least partially free of the component (9) and the substrate (10). The method further comprises irradiating the heat-conducting strip (3) in the radiation-accessible zone (7) by means of electromagnetic radiation (6). Heat (4a) generated by absorption of the electromagnetic radiation (6) in the heat-conducting strip (3) is conducted from the radiation-accessible zone (7) along a length of the heat-conducting strip (3) to the embedded curing zone (2) to cure the heat-curable material (1) by conducted heat (4b) emanating from the heat-conducting strip (3) into the embedded curing zone (2).

Selective transfer of dies including semiconductor devices to a target substrate can be performed employing local laser irradiation. Coining of at least one set of solder material portions can be employed to provide a planar surface-to-surface contact and to facilitate bonding of adjoining pairs of bond structures. Laser irradiation on the solder material portions can be employed to sequentially bond selected pairs of mated bonding structures, while preventing bonding of devices not to be transferred to the target substrate. Additional laser irradiation can be employed to selectively detach bonded devices, while not detaching devices that are not bonded to the target substrate. The transferred devices can be pressed against the target substrate during a second reflow process so that the top surfaces of the transferred devices can be coplanar. Wetting layers of different sizes can be employed to provide a trapezoidal vertical cross-sectional profile for reflowed solder material portions.

An anisotropic conductive film configured to suppress flowing of conductive particles attributable to the flowing of an insulating resin layer at the time of anisotropic conductive connection, improve the conductive particle capturing properties, and reduce short circuits has a conductive particle dispersion layer including the conductive particles dispersed (or distributed) in the insulating resin layer. The insulating resin layer is a layer of a photo-polymerizable resin composition. The surface of the insulating resin layer in the vicinity of each of the conductive particles has an inclination or an undulation with respect to the tangent plane of the insulating resin layer in the center portion between the adjacent conductive particles.

A backplane can have a non-planar top surface. Insulating material portions including planar top surface regions located within a same horizontal plane are formed over the backplane. A two-dimensional array of metal plate clusters is formed over the insulating material portions. Each of the metal plate clusters includes a plurality of metal plates. Each metal plate includes a horizontal metal plate portion overlying a planar top surface region and a connection metal portion connected to a respective metal interconnect structure in the backplane. A two-dimensional array of light emitting device clusters is bonded to the backplane through respective bonding structures. Each light emitting device cluster includes a plurality of light emitting devices overlying a respective metal plate cluster.

A semiconductor manufacturing system comprises a laser and a heated bond tip and is configured to bond a die stack in a semiconductor assembly. The semiconductor assembly includes a wafer, manufacture from a material that is optically transparent to a beam emitted by the laser and configured to support a die stack comprising a plurality of semiconductor dies. A metal film is deposited on the wafer and heatable by the beam emitted by the laser. The heated bond tip applies heat and pressure to the die stack, compressing the die stack between the heated bond tip and the metal film and thermally bonding dies in the stack by heat emitted by the heated bond tip and the metal film when the metal film is heated by the beam emitted from the laser.

Provided is an electroconductive adhesive which is less apt to suffer cracking, chipping, etc. upon sintering and gives sintered objects having excellent mechanical strength. The electroconductive adhesive comprises metallic microparticles which include a protective layer comprising one or more amines and have an average particle diameter of 30-300 nm, the amines comprising a C.sub.5-7 monoalkylamine and/or an alkoxyamine represented by the following general formula (1). NH.sub.2R.sup.2OR.sup.1 (1) In the protective layer, the ratio of the C.sub.5-7 monoalkylamine and/or alkoxyamine represented by the general formula (1) to one or more amines different therefrom is in the range of 100:0 to 10:90. [In formula (1), R.sup.1 represents a C.sub.1-4 alkyl group and R.sup.2 represents a C.sub.1-4 alkylene group.]

Provided is an electroconductive adhesive which is less apt to suffer cracking, chipping, etc. upon sintering and gives sintered objects having excellent mechanical strength. The electroconductive adhesive comprises metallic microparticles which include a protective layer comprising one or more amines and have an average particle diameter of 30-300 nm, the amines comprising a C.sub.5-7 monoalkylamine and/or an alkoxyamine represented by the following general formula (1). NH.sub.2R.sup.2OR.sup.1 (1) In the protective layer, the ratio of the C.sub.5-7 monoalkylamine and/or alkoxyamine represented by the general formula (1) to one or more amines different therefrom is in the range of 100:0 to 10:90. [In formula (1), R.sup.1 represents a C.sub.1-4 alkyl group and R.sup.2 represents a C.sub.1-4 alkylene group.]

A joint device includes a regulation device, a heating device, and a transparent portion. The regulation device includes a support base that includes a placement surface, and a regulation member. The heating device applies heat for causing solid phase diffusion at a joint interface between the two metal members by radiating an electromagnetic beam to a beam irradiated region via the regulation member. The beam irradiated region is set on a surface of one of the two metal members that is farther from the placement surface while the regulation device regulates motion of the two metal members. The transparent portion is provided at least at a portion corresponding to the beam irradiated region of the metal member to which the electromagnetic beam is irradiated, to transmit the electromagnetic beam.